Si/Nanocrystalline Diamond Film Heterojunction Diodes Preparation

作     者：Wu Nanchun Xia Yiben Tan Shouhong Wang Linjun Cui Jiangtao 

作者机构：School of Materials Science & Engineering Shanghai University Shanghai 200072 China Shanghai Institute of Ceramics Chinese Academy of China Shanghai 200050 China School of Materials Science & Engineering Shanghai University Shanghai 200072 China Shanghai Institute of Ceramics Chinese Academy of China Shanghai 200050 China School of Materials Science & Engineering Shanghai University Shanghai 200072 China School of Materials Science & Engineering Shanghai University Shanghai 200072 China 

出 版 物：《Journal of Rare Earths》 (稀土学报（英文版）)

年 卷 期：2006年第24卷第Z1期

页      面：45-48页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

基　　金：Project supported by the National Natural Science Foundation of China (60277024) 

主　　题：nanocrystalline diamond film p-n heterojunction diode rectification characterization EACVD 

摘      要：With electron assisted hot filament chemical vapor deposition technology, nanocrystalline diamond films were deposited on polished n-(100)Si wafer surface. The deposited films were characterized and observed by Raman spectrum, X-ray diffraction, semiconductor characterization system and Hall effective measurement system. The results show that with EA-HFCVD, not only an undoped nanocrystalline diamond films with high-conductivity (p-type semiconducting) but also a p-n heterojunction diode between the nanocrystalline diamond films and n-Si substrate is fabricated successfully. The p-n heterojunction has smaller forward resistance and bigger positive resistance. The p-n junction effective is evident.