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Inhibition of cusp magnetic field on stray-crystal formation in platform region during directionally solidified single-crystal superalloy

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Journal of Materials Science & Technology 2022年第11期106卷 183-194页

作者： Weili Ren Tao Zhou Xiaotan Yuan Ming Jian Congjiang Zhang Biao Ding Jianchao Peng Tianxiang Zheng Yunbo Zhong State Key Laboratory of Advanced Special Steel College of Materials Science and EngineeringShanghai UniversityShanghai 200444China China National South Aviation Industry Co. LtdZhuzhou 412000China Laboratory for Microstructures Shanghai UniversityShanghai 200444China

The stray crystal in the platform region is one of the common main defects in single-crystal superalloy blades. The simple and effective method to eliminate this defect is urgent to be explored. This work found that the cusp magnetic field can effectively inhibit the stray-crystal formation in the platform. The tendency of stray-crystal formation decreases as the magnetic-field strength increases at a certain withdrawal rate and temperature-gradient. The suppressing effect decreases as the withdrawal rate or the temperature-gradient increases. Finally, the inhibiting mechanism on the stray-crystal formation from the cusp magnetic field is proposed based on the experiments and the numerical simulation. The magneticfield application strengthens the flow velocity and changes the flow structure near the liquid-solid interface, and further reduces the radial temperature difference. Accordingly, the secondary dendrites in the heat-conduction undercooled zone expands towards the corner in a faster speed, which reduces the stray-crystal formation in the platform corner. This study provides an effective and simple method for decreasing the stray-crystal formation during the preparation of single-crystal with platform region.

关键词： Single-crystal superalloy cusp magnetic field Stray crystals Platform region

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Electric Potential in Surface Produced Negative Ion Source with magnetic field Increasing Toward a Wall

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Plasma Science and Technology 2013年第3期15卷 266-270页

作者： Azusa FUKANO Akiyoshi HATAYAMA Monozukuri Department Tokyo Metropolitan College of Industrial Technology Faculty of Science and Technology Keio University

Electric potential near a wall for plasma with the surface produced negative ions with magnetic field increasing toward a wall is investigated analytically. The potential profile is derived analytically by using a plasma-sheath equation, where negative ions produced on the plasma grid （PG） surface are considered in addition to positive ions and electrons. The potential profile depends on the amount and the temperature of the surface produced negative ions and the profile of the magnetic field. The negative potential peak is formed in the sheath region near the PG surface for the case of strong surface production of negative ions or low temperature negative ions. As the increase rate of the magnetic field near the wall becomes large, the negative potential peak becomes small.

关键词： negative ion source surface produced negative ion sheath potential cusp magnetic field electric potential plasma-sheath equation extraction region

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Research on Some Control Issues in the Czochralski Process of Solar Grade Mono-Crystal Silicon

Research on Some Control Issues in the Czochralski Process o...

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第26届中国控制与决策会议

作者： Liu Ding Zhang Jing Xi’ an University of Technology

Czochralski（CZ） method based silicon crystal furnace is the main equipment to produce the solar cells silicon material. To meet the technological requirements of the silicon material for the solar photovoltaic industry, this paper introduces the role of mono-crystal silicon in the solar photovoltaic industry, and studies some key control issues in the silicon crystal growth process. Important achievements are obtained in the aspects of diameter measurement and control, heat field modeling and temperature control, design and implementation of the large-scale cusp magnetic field as well as solid-liquid interface measurement and control etc. Experimental results show that the proposed solutions meet the technological requirements of silicon crystal growth process.

关键词： CZ Method Diameter Control Thermal field Modeling cusp magnetic field Solid-Liquid Interface Measurement

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