Research on Some Control Issues in the Czochralski Process of Solar Grade Mono-Crystal Silicon
作者单位：Xi’ an University of Technology
会议名称：《第26届中国控制与决策会议》
会议日期：2014年
学科分类：08[工学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）]
基 金：supported by National Nature Science Foundation of China(61075044) National Science and Technology Major Project of the Ministry of Science and Technology of China(2009ZX02011001)
关 键 词：CZ Method Diameter Control Thermal Field Modeling CUSP Magnetic Field Solid-Liquid Interface Measurement
摘 要：Czochralski（CZ） method based silicon crystal furnace is the main equipment to produce the solar cells silicon material. To meet the technological requirements of the silicon material for the solar photovoltaic industry, this paper introduces the role of mono-crystal silicon in the solar photovoltaic industry, and studies some key control issues in the silicon crystal growth process. Important achievements are obtained in the aspects of diameter measurement and control, heat field modeling and temperature control, design and implementation of the large-scale CUSP magnetic field as well as solid-liquid interface measurement and control etc. Experimental results show that the proposed solutions meet the technological requirements of silicon crystal growth process.