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Controlled Preparation of Monodisperse cofe_2o_4 nanoparticles by a Facile Method

Journal of Wuhan University of Technology(Materials Science) 2011年第2期26卷 258-262页

作者：王海 Key Laboratory of Fiber optic Sensing Technology and Information Processing of Ministry of Education Wuhan University of Technology

cofe2o4 nanoparticles （NPs） were synthesized by coprecipitation method using FeCl3·6H2o and CoCl2·6H2o as *** synthesized conditions were optimized,such as added means of precipitator,quantity of precipitator,the mol ratio of Fe 3＋ to Co2＋,reaction temperature and pH *** synthesized material was characterized by XRD,TEM,FTIR,EDS,Raman and its magnetic properties were studied by *** experimental results confirm that the sample is cubic spinel structure cofe2o4 with a narrow size distribution and a good dispersion ***2o4 NPs with well-controlled shape and size was obtained at 70℃.The magnetic properties indicate superparamagnetic behavior and good saturated magnetization.

关键词： cofe2o4 nanoparticles coprecipitation method monodispersity superparamagnetism

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A flexible magnetoelectric field-effect transistor with magnetically responsive nanohybrid gate dielectric layer

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Nano Research 2015年第10期8卷 3421-3429页

作者： Nguyen Minh Triet Tran Quang Trung Nguyen Thi Dieu Hien Saqib Siddiqui Do-ll Kim Jai Chan Lee Nae-Eung Lee SchoolofAdvancedMaterialsScienceandEngineering SungkyunkwanUniversitySuwonKyunggi-do440-746RepublicofKorea SungkyunkwanUniversity(SKKU)AdvancedInstituteofNanotechnology(SAINT) 5ungkyunkwanUniversitySuwonKyunggi-do440-746RepublicofKorea SamsungAdvancedInstituteforHealthSciencesandTechnology(SAIHST) SungkyunkwanUniversitySuwonKyunggi-do440-746RepublicofKorea

Flexible magnetoelectric （ME） materials have been studied for new applications such as memory, energy harvesters, and magnetic field sensors. Herein, with the widely studied and progressive advantages of ME phenomena in the multiferroic field, we demonstrate a new approach for utilizing flexible ME materials as gate dielectric layers in ME organic field-effect transistors （ME-oFET） that can be used for sensing a magnetic field and extracting the ME properties of the gate dielectric itself. The magnetoelectric nanohybrid gate dielectric layer comprises sandwiched stacks of magnetostrictive cofe2o4 nanoparticles and a highly piezoelectric poly（vinylidene fluoride-co-trifluoroethylene） layer. While varying the magnetic field applied to the ME gate dielectric, the ME effect in the functional gate dielectric modulates the channel conductance of the ME-oFET owing to a change in the effective gate field. The clear separation of the ME responses in the gate dielectric layer of ME-oFET from those of the other parameters was demonstrated using the AC gate biasing method and enabled the extraction of the ME coefficient of ME materials. Additionally, the device shows high stability after cyclic bending of 10,000 cycles at a banding radius of 1.2 cm. The device has significant potential for not only the extraction of the intrinsic characterization of ME materials but also the sensing of a magnetic field in integrated flexible electronic systems.

关键词： magnetoelectric magnetostriction cofe2o4 nanoparticles P(VDF-TrFE) organic field-effecttransistor magnetic sensor

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