A flexible magnetoelectric field-effect transistor with magnetically responsive nanohybrid gate dielectric layer

作     者：Nguyen Minh Triet Tran Quang Trung Nguyen Thi Dieu Hien Saqib Siddiqui Do-ll Kim Jai Chan Lee Nae-Eung Lee 

作者机构：SchoolofAdvancedMaterialsScienceandEngineeringSungkyunkwanUniversitySuwonKyunggi-do440-746RepublicofKorea SungkyunkwanUniversity(SKKU)AdvancedInstituteofNanotechnology(SAINT)5ungkyunkwanUniversitySuwonKyunggi-do440-746RepublicofKorea SamsungAdvancedInstituteforHealthSciencesandTechnology(SAIHST)SungkyunkwanUniversitySuwonKyunggi-do440-746RepublicofKorea 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2015年第8卷第10期

页      面：3421-3429页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：supported by the Basic Science Research Program through the National Research Foundation (NRF) funded by the Ministry of Science, ICT and Future Planning 

主　　题：magnetoelectric magnetostriction CoFe2O4 nanoparticles P(VDF-TrFE) organic field-effecttransistor magnetic sensor 

摘      要：Flexible magnetoelectric （ME） materials have been studied for new applications such as memory, energy harvesters, and magnetic field sensors. Herein, with the widely studied and progressive advantages of ME phenomena in the multiferroic field, we demonstrate a new approach for utilizing flexible ME materials as gate dielectric layers in ME organic field-effect transistors （ME-OFET） that can be used for sensing a magnetic field and extracting the ME properties of the gate dielectric itself. The magnetoelectric nanohybrid gate dielectric layer comprises sandwiched stacks of magnetostrictive CoFe2O4 nanoparticles and a highly piezoelectric poly（vinylidene fluoride-co-trifluoroethylene） layer. While varying the magnetic field applied to the ME gate dielectric, the ME effect in the functional gate dielectric modulates the channel conductance of the ME-OFET owing to a change in the effective gate field. The clear separation of the ME responses in the gate dielectric layer of ME-OFET from those of the other parameters was demonstrated using the AC gate biasing method and enabled the extraction of the ME coefficient of ME materials. Additionally, the device shows high stability after cyclic bending of 10,000 cycles at a banding radius of 1.2 cm. The device has significant potential for not only the extraction of the intrinsic characterization of ME materials but also the sensing of a magnetic field in integrated flexible electronic systems.