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Chinese Physics B 2023年第8期32卷 457-464页

作者：孙晓清徐昊柴俊帅王晓磊王文武 Key Laboratory of Microelectronics&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China College of Microelectronics University of Chinese Academy of SciencesBeijing 100049China Bureau of Major R&D Programs Chinese Academy of Sciences Beijing 100864China

We study the charge trapping phenomenon that restricts the endurance of n-type ferroelectric field-effect transistors(FeFETs)with metal/ferroelectric/interlayer/Si(MFIS)gate stack *** order to explore the physical mechanism of the endurance failure caused by the charge trapping effect,we first establish a model to simulate the electron trapping behavior in n-type Si *** model is based on the quantum mechanical electron tunneling *** then,we use the pulsed I_d-V_g method to measure the threshold voltage shift between the rising edges and falling edges of the *** model fits the experimental data *** fitting the model with the experimental data,we get the following conclusions.(i)During the positive operation pulse,electrons in the Si substrate are mainly trapped at the interface between the ferroelectric(FE)layer and interlayer(IL)of the FeFET gate stack by inelastic trap-assisted tunneling.(ii)Based on our model,we can get the number of electrons trapped into the gate stack during the positive operation pulse.(iii)The model can be used to evaluate trap parameters,which will help us to further understand the fatigue mechanism of FeFET.

关键词： ferroelectric interface ferroelectric field-effect transistors(FeFETs) charge trapping

Dependence of charge trapping of fluorescent and phosphorescent dopants in organic light-emitting diodes on the dye species and current density

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Chinese Physics B 2010年第3期19卷 450-455页

作者：魏斌廖英杰刘纪忠路林曹进王军张建华 Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University

This paper utilizes multilayer organic light-emitting diodes with a thin layer of dye molecules to study the mech- anism of charge trapping under different electric regimes. It demonstrates that the carrier trapping was independent of the current density in devices using fluorescent material as the emitting molecule while this process was exactly opposite when phosphorescent material was used. The triplet-triplet annihilation and dissociation of excitons into free charge carriers was considered to contribute to the decrease in phosphorescent emission under high electric fields. Moreover, the fluorescent dye molecule with a lower energy gap and ionized potential than the host emitter was observed to facilitate the carrier trapping mechanism, and it would produce photon emission.

关键词： organic light-emitting diodes excitation mechanism charge trapping current density

Effect of charge trapping on electrical characteristics of silicon junctionless nanowire transistor

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Journal of Semiconductors 2022年第5期43卷 104-108页

作者： Yifan Fu Liuhong Ma Zhiyong Duan Weihua Han School of Physics and Microelectronics Zhengzhou UniversityZhengzhou 450001China Engineering Research Center for Semiconductor Integrated Technology Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100083China Institute of Intelligence Sensing in Zhengzhou University Zhengzhou 450001China

We investigated the effect of charge trapping on electrical characteristics of silicon junctionless nanowire transistors which are fabricated on heavily n-type doped silicon-on-insulator substrate. The obvious random telegraph noise and current hysteresis observed at the temperature of 10 K indicate the existence of acceptor-like traps. The position depth of the traps in the oxide from Si/SiO_(2) interface is 0.35 nm, calculated by utilizing the dependence of the capture and emission time on the gate voltage. Moreover, by constructing a three-dimensional model of tri-gate device structure in COMSOL Multiphysics simulation software, we achieved the trap density of 1.9 × 10^(12) cm^(–2) and the energy level position of traps at 0.18 eV below the intrinsic Fermi level.

关键词： junctionless transistor charge trapping random telegraph signals

Depolarization mitigated in ferroelectric Hf_(0.5)Zr_(0.5)O_(2)ultrathin films(<5 nm)on Si substrate by interface engineering

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Journal of Advanced Ceramics 2024年第3期13卷 282-292页

作者： Se Hyun Kim Younghwan Lee Dong Hyun Lee Geun Hyeong Park Hyun Woo Jeong Kun Yang Yong Hyeon Cho Young Yong Kim Min Hyuk Park Department of Materials Science and Engineering College of EngineeringSeoul National UniversitySeoul 08826Republic of Korea Research Institute of Advanced Materials College of EngineeringSeoul National UniversitySeoul 08826Republic of Korea Inter-university Semiconductor Research Center College of EngineeringSeoul National UniversitySeoul 08826Republic of Korea Pohang Accelerator Laboratory Pohang University of Science&TechnologyPohang 790784Republic of Korea

(Hf,Zr)O_(2)offers considerable potential for next-generation semiconductor devices owing to its nonvolatile spontaneous polarization at the ***,scaling this material to sub-5 nm thickness poses several challenges,including the formation of an interfacial layer and high trap *** particular,a low-k SiO_(2)interfacial layer is naturally formed when(Hf,Zr)O_(2)films are directly grown on a Si substrate,leading to high depolarization fields and rapid reduction of the remanent *** address these issues,we conducted a study to significantly improve ferroelectricity and switching endurance of(Hf,Zr)O_(2)films with sub-5 nm thicknesses by inserting a TiO_(2)interfacial *** deposition of a Ti film prior to Hf_(0.5)Zr_(0.5)O_(2)film deposition resulted in a high-k TiO_(2)interfacial layer and prevented the direct contact of Hf_(0.5)Zr_(0.5)O_(2)with *** findings show that the high-k TiO_(2)interfacial layer can reduce the SiO_(2)/Si interface trap density and the depolarization field,resulting in a switchable polarization of 60.2μC/cm^(2)for a 5 nm thick Hf_(0.5)Zr_(0.5)O_(2)***,we propose that inserting a high-k TiO_(2)interfacial layer between the Hf_(0.5)Zr_(0.5)O_(2)film and the Si substrate may offer a promising solution to enhancing the ferroelectricity and reliability of(Hf,Zr)O_(2)grown on the Si substrate and can pave the way for next-generation semiconductor devices with improved performance.

关键词： ferroelectric charge trapping hafnia depolarization

Near-infrared electroluminescent diodes based on copper hexadecafluorophthalocyanine CuPcF_(16)

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Chinese Optics Letters 2009年第5期7卷 413-415页

作者：范昭奇程传辉于书坤叶开其夏道成白青龙管和松杜国同 School of Physics and Optoelectronic Technology Dalian University of Technology State Key Laboratory of Integrated Optoelectronics College of Electronic Scienceand EngineeringJilin University Key Lab of Supramolecular Structure and Materials College of ChemistryJilin University

We demonstrate the near-infrared （NIR） organic light-emitting devices （OLEDs） based on copper hexade-cafluorophthalocyanine （CuPcF16） doped into 2,2,2”-（1,3,5-benzenetriyl）tris-[1-phenyl-1H-benzimidazole] （TPBI）. The device structure is ITO/ NPB/ TPBI：CuPcF16/BCP/Alq3/Al. Room-temperature electro- luminescence is observed at about 1106 nm due to transitions from the first excited triplet state to the ground state （T1-S0） of CuPcF16. The result indicates that FSrster and Dexter energy transfers play a minor role in these devices, while the direct charge trapping is the dominant mechanism. The absorption spectra of CuPeF16 solution in pyridine and vacuum sublimed films on quartz have also been investigated.

关键词： charge trapping Electroluminescence Energy transfer Infrared devices Light Oxide minerals Quartz

Excitation-assisted pseudo-ferroelectric effect in ultrathin graphene/phosphorene heterostructure

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Nano Research 2023年第11期16卷 12587-12593页

作者： Huan Lu Wanlin Guo State Key Laboratory of Mechanics and Control of Mechanical Structures Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Educationand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing 210016China

Pseudo-ferroelectric transistors have attracted particular interest owing to their applications in the non-volatile memories and neuromorphic circuits;however,it remains to be explored in the limit of few-layer *** we reveal a pseudo-ferroelectric phenomenon in the ultrathin graphene/black phosphorene(G/BP)heterostructure by first-principles *** forward an excitation-assisted mechanism,the ferroelectric-like hysteresis loop can be explained by a combined effect of the external electric fields dependent bipolarity and anisotropy in the G/BP *** the build-in electric field,the bipolar behavior results in the multistate effect of the G/BP heterostructure when modulating the applied electric *** anisotropic hybridization caused by the susceptible Dirac electrons in graphene and the large in-plane anisotropy in BP provides the interfacial states,which trap excitations and stabilize the *** pseudo-ferroelectric behavior should be useful for interpreting transport experiments in gated G/BP devices and exploring its applications in memories or synaptic devices.

关键词： pseudo-ferroelectric effect charge trapping graphene/phosphorene heterostructure first-principles calculations

The origin of gate bias stress instability and hysteresis in monolayer WS2 transistors

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Nano Research 2020年第12期13卷 3278-3285页

作者： Changyong Lan Xiaolin Kang You Meng Renjie Wei Xiuming Bu SenPo Yip Johnny C.Ho State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu610054China School of Optoelectronic Science and Engineering University of Electronic Science and Technology of ChinaChengdu610054China Department of Materials Science and Engineering City University of Hong KongKowloonHong Kong999077China State Key Laboratory of Terahertz and Millimeter Waves City University of Hong KongKowloonHong Kong999077China Key Laboratory of Advanced Materials Processing&Mold of Ministry of Education Zhengzhou UniversityZhengzhou450002China

Due to the ultra-thin nature and moderate carrier mobility,semiconducting two-dimensional(2D)materials have attracted extensive attention for next-generation ***,the gate bias stress instability and hysteresis are always observed in these 2D materials-based transistors that significantly degrade their reliability for practical ***,the origin of gate bias stress instability and hysteresis for chemical vapor deposited monolayer WS2 transistors are investigated *** transistor performance is found to be strongly affected by the gate bias stress time,sweeping rate and range,and *** on the systematical study and complementary analysis,charge trapping is determined to be the major contribution for these observed ***,due to these charge trapping effects,the channel current is observed to decrease with time;hence,a rate equation,considering the charge trapping and time decay effect of current,is proposed and developed to model the phenomena with excellent consistency with experimental *** these results do not only indicate the validity of the charge trapping model,but also confirm the hysteresis being indeed caused by charge ***,this simple model provides a sufficient explanation for the charge trapping induced gate bias stress instability and hysteresis in monolayer WS2 transistors,which can be also applicable to other kinds of transistors.

关键词： charge trapping gate bias stress instability hysteresis WS2 transistor

Luminescent Properties of A Novel Terbium Complex Tb(o-BBA)_3(phen)

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Journal of Rare Earths 2006年第2期24卷 253-256页

作者：刘玲徐征娄志东张福俊孙波裴娟 Institute of Optoelectronics Technology Beijing Jiaotong University Beijing 100044China Key Laboratory of Luminescence and Optical Information Ministry of Education Department of Materials Chemistry College of Chemistry Nankai University Tianjin 300071 China Department

A novel rare earth complex of terbium ion with 2-benzoylbenzoic acid and 1, 10-phenathroline （Tb（o-BBA）3 （phen）, o-BBA-2-benzoylbenzoic acid, phen = 1, 10-phenathroline） was used as an electroluminescent material for the first time. The Tb complex was blended with poly（N-vinylcarbazole）（PVK） in different weight ratios and spinn to coated into films （noted as PVK ：Tb films）. The photoluminescence （PL） properties of films were investigated and the optimum weight ratio between PVK and Tb（o-BBA）3（phen） was found to be 3：1. Monolayer devices with the structure ITO/PVK： Tb/AI were fabricated and emitted green light, which was characteristic of Tb^3＋ emission. The results show that mecha- nisms for PL and EL are different. The PL is considered to be caused because of energy transfer and direct excitation to the Tb（o-BBA）3（phen） molecule, while EL is mainly on charging trapping.

关键词： Tb complex energy transfer charge trapping electroluminescence rare earths

Unidirectional p-GaN gate HEMT with composite source-drain field plates

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Science China(Information Sciences) 2022年第2期65卷 265-266页

作者： Haiyong WANG Wei MAO Shenglei ZHAO Yuanhao HE Jiabo CHEN Ming DU Xuefeng ZHENG Chong WANG Chunfu ZHANG Jincheng ZHANG Yue HAO Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices School of Microelectronics Xidian University

Dear editor,Ga N-on-Si high electron mobility transistors (HEMTs) have attracted attention for power device applications due to their low cost and large-area availability[1].Recently,bidirectional switches are highly desirable in many industrial bidirectional power conversion applications,such as rolling mills,elevators,and wind power *** addition,normally-off unidirectional HEMTs can be valuable devices to implement the high-performance bidirectional switches[2,3].

关键词： Nano CMOS ESD Reliability Hot-carrier charge trapping

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Scaling behavior of nanoimprint and nanoprinting lithography for producing nanostructures of molybdenum disulfide

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Microsystems & Nanoengineering 2017年第1期3卷 146-153页

作者： Mikai Chen Hossein Rokni Wei Lu Xiaogan Liang Mechanical Engineering Department University of MichiganAnn ArborMI 48109USA.

Top-down lithography techniques are needed for manufacturing uniform device structures based on emerging 2D-layered *** exfoliation approaches based on nanoimprint and nanoprint principles are capable of producing ordered arrays of multilayer transition metal dichalcogenide microstructures with a high uniformity of feature *** this study,we present a study on the applicability of nanoimprint-assisted shear exfoliation for generating ultrathin monolayer and few-layer MoS_(2) structures as well as the critical limits of feature dimensions produced via such nanoimprint and nanoprint-based *** particular,this work shows that give a lateral feature size of MoS_(2) structures that are pre-patterned on a bulk stamp,there exists a critical thickness or aspect ratio value,below which the exfoliated layered structures exhibit major *** exfoliate a highquality,uniform monolayer or few-layer structures,the characteristic lateral feature sizes of such structures need to be in the sub-100 nm *** addition,the exfoliated MoS_(2) flakes of critical thicknesses exhibit prominent interlayer twisting features on their cleaved ***-effect transistors made from these MoS_(2) flakes exhibit multiple(or quasi-analog-tunable)charge memory *** work advances the knowledge regarding the limitations and application scope of nanoimprint and nanoprint processes in manufacturing nano/microstructures based on layered materials and provides a method for producing multi-bit charge memory devices.

关键词： 2D materials charge trapping memory MoS_(2) nanoimprint nanoprint