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Improvement of carrier distribution in dual wavelength light-emitting diodes

Journal of Semiconductors 2013年第5期34卷 87-89页

作者：司朝魏同波张宁马骏王军喜李晋闽 Research and Development Center for Semiconductor Lighting Institute of SemiconductorsChinese Academy of Sciences

The effect of different barriers between green and blue light regions in dual wavelength light emitting diodes was studied. Compared with a traditional sample, electroluminescence and photoluminescence spectra of the newly designed samples showed peak intensity improvements and smaller blue-shifts with increasing injection current level, and the bottom quantum-wells light emitting is enhanced. All these phenomena can be ascribed to reduced barrier thickness and indium doping in the quantum-barrier influencing electric fields and more holes injecting into the bottom QWs.

关键词： LED dual wavelength quantum barrier holes injection carrier distribution

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Physical effect of carrier distribution in the channel of static induction thyristor

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Journal of Semiconductors 2014年第8期35卷 84-88页

作者：刘春娟汪再兴王永顺 College of Electronic and Information Engineering Lanzhou Jiaotong University

The physical effects of the carrier distribution in the channel on the dynamical performance of a static induction thyristor （SITH） have been studied numerically and experimentally. The analytical expressions of the minority carrier distribution in the channel of the SITH were also derived and the space charge distribution control- ling mechanism on the current of the SITH under high level injection have been analyzed deeply. The relationships among the minority carrier distribution, potential distribution, I-V characteristics and transient performances of the SITH are revealed.

关键词： static induction thyristor carrier distribution potential barrier space charge distribution

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Bending Analysis of Circular Piezoelectric Semiconductor Plates Incorporating Flexoelectricity

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ACTA MECHANICA SOLIDA SINICA 2024年第4期37卷 613-621页

作者： Sun, Liang Xiao, Zhengguang Zhang, Chunli Chen, Weiqiu Zhejiang Univ Dept Engn Mech Hangzhou 310027 Peoples R China Naval Univ Engn Dept Basic Courses Wuhan 430033 Peoples R China Huanjiang Lab Zhuji 311816 Peoples R China

Based on the three-dimensional (3D) basic equations of piezoelectric semiconductors (PSs), we establish a two-dimensional (2D) deformation-polarization-carrier coupling bending model for PS structures, taking flexoelectricity into consideration. The analytical solutions to classical flexure of a clamped circular PS thin plate are derived. With the derived analytical model, we numerically investigate the distributions of electromechanical fields and the concentration of electrons in the circular PS thin plate under an upward concentrated force. The effect of flexoelectricity on the multi-field coupling responses of the circular PS plate is studied. The obtained results provide theoretical guidance for the design of novel PS devices.

关键词： Piezoelectric semiconductor Plate model Flexoelectricity Multi-field coupling carrier distribution PIEZOTRONICS NANOWIRE

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