Improvement of carrier distribution in dual wavelength light-emitting diodes

作     者：司朝 魏同波 张宁 马骏 王军喜 李晋闽 

作者机构：Research and Development Center for Semiconductor LightingInstitute of SemiconductorsChinese Academy of Sciences 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2013年第34卷第5期

页      面：87-89页

核心收录：

学科分类：0808[工学-电气工程] 080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0803[工学-光学工程] 0702[理学-物理学] 

基　　金：supported by the National Natural Science Foundation of China(No.61274040) 

主　　题：LED dual wavelength quantum barrier holes injection carrier distribution 

摘      要：The effect of different barriers between green and blue light regions in dual wavelength light emitting diodes was studied. Compared with a traditional sample, electroluminescence and photoluminescence spectra of the newly designed samples showed peak intensity improvements and smaller blue-shifts with increasing injection current level, and the bottom quantum-wells light emitting is enhanced. All these phenomena can be ascribed to reduced barrier thickness and indium doping in the quantum-barrier influencing electric fields and more holes injecting into the bottom QWs.