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Unconventional Hall effect induced by berry curvature

National Science Review 2020年第12期7卷 1879-1885页

作者： Jun Ge Da Ma Yanzhao Liu Huichao Wang Yanan Li Jiawei Luo Tianchuang Luo Ying Xing Jiaqiang Yan David Mandrus Haiwen Liu X.C.Xie Jian Wang International Center for Quantum Materials School of PhysicsPeking University Department of Applied Physics The Hong Kong Polytechnic University Department of Physics Pennsylvania State UniversityUniversity Park Department of Materials Science and Engineering School of New Energy and MaterialsChina University of Petroleum Department of Materials Science and Engineering University of Tennessee Materials Science and Technology Division Oak Ridge National Laboratory Center for Advanced Quantum Studies Department of PhysicsBeijing Normal University CAS Center for Excellence in Topological Quantum Computation University of Chinese Academy of Sciences Beijing Academy of Quantum Information Sciences Collaborative Innovation Center of Quantum Matter

berry phase and berry curvature play a key role in the development of topology in physics and do contribute to the transport properties in solid state *** this paper,we report the finding of novel nonzero Hall effect in topological material Zr Te5 flakes when the in-plane magnetic field is parallel and perpendicular to the ***,both symmetric and antisymmetric components with respect to magnetic field are detected in the in-plane Hall *** theoretical analysis suggests that the magnetotransport properties originate from the anomalous velocity induced by berry curvature in a tilted Weyl *** work not only enriches the Hall family but also provides new insights into the berry phase effect in topological materials.

关键词： berry curvature topological material Hall effect tilted Weyl semimetal berry phase effect

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Orbital magnetization in semiconductors

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Chinese Physics B 2009年第12期18卷 5431-5436页

作者：方诚王志刚李树深张平 Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of Sciences Physics Department East China Institute of Technology Institute of Applied Physics and Computational Mathematics Institute of Applied Physics and Computational Mathematics Beijing 100088China Center for Applied Physics and Technology Peking University

This paper theoretically investigates the orbital magnetization of electron-doped （n-type） semiconductor het-erostructures and of hole-doped （p-type） bulk semiconductors, which are respectively described by a two-dimensional electron/hole Hamiltonian with both the included Rashba spin-orbit coupling and Zeeman splitting terms. It is the Zeeman splitting, rather than the Rashba spin-orbit coupling, that destroys the time-reversal symmetry of the semiconductor systems and results in nontrivial orbital magnetization. The results show that the magnitude of the orbital magnetization per hole and the Hall conductance in the p-type bulk semiconductors are about 10^-2-10^-1 effective Bohr magneton and 10^-1-1 e^2/h, respectively. However, the orbital magnetization per electron and the Hall conductance in the n-type semiconductor heterostructures are too small to be easily observed in experiment.

关键词： orbital magnetization Zeeman splitting berry phase effect semiconductor

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