Orbital magnetization in semiconductors

作     者：方诚 王志刚 李树深 张平 

作者机构：Laboratory for Superlattices and MicrostructuresInstitute of SemiconductorsChinese Academy of Sciences Physics DepartmentEast China Institute of Technology Institute of Applied Physics and Computational Mathematics Institute of Applied Physics and Computational MathematicsBeijing 100088China Center for Applied Physics and TechnologyPeking University 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2009年第18卷第12期

页      面：5431-5436页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 07[理学] 0809[工学-电子科学与技术（可授工学、理学学位）] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0704[理学-天文学] 0702[理学-物理学] 

基　　金：Project supported by the National Natural Science Foundation of China (Grant Nos 60821061 60776061 10604010 and 60776063) 

主　　题：orbital magnetization Zeeman splitting Berry phase effect semiconductor 

摘      要：This paper theoretically investigates the orbital magnetization of electron-doped （n-type） semiconductor het-erostructures and of hole-doped （p-type） bulk semiconductors, which are respectively described by a two-dimensional electron/hole Hamiltonian with both the included Rashba spin-orbit coupling and Zeeman splitting terms. It is the Zeeman splitting, rather than the Rashba spin-orbit coupling, that destroys the time-reversal symmetry of the semiconductor systems and results in nontrivial orbital magnetization. The results show that the magnitude of the orbital magnetization per hole and the Hall conductance in the p-type bulk semiconductors are about 10^-2-10^-1 effective Bohr magneton and 10^-1-1 e^2/h, respectively. However, the orbital magnetization per electron and the Hall conductance in the n-type semiconductor heterostructures are too small to be easily observed in experiment.