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^(60)Co Gamma Irradiation and Annealing Effects on Transport Properties of antimony telluride Platelets Grown by Physical Vapor Deposition

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Acta Metallurgica Sinica(English Letters) 2015年第5期28卷 559-566页

作者： Thankamma George A.G.Kunjomana Crystal Research Centre Department of Physics Christ University

Physical vapor deposition method was employed to deposit antimony telluride （Sb2Te3） crystals in a dual-zone furnace. The microstructure, surface topography and composition of samples were characterized using X-ray diffraction, atomic force and scanning electron microscopy. Seebeck coefficient （Sic）, electrical conductivity （σ⊥c） as well as power factor （PF） were enhanced for pure Sb2Te3 samples upon annealing, and the samples annealed at 473 K exhibited the highest PF of 3.16 × 10^-3 W m-1K-2 with an enhancement of 22% in the figure of merit （Z）. When the delivered dose of 60Co gamma radiation was increased from 0 to 30 kGy in the stoichiometric crystals, σ⊥c decreased due to the decrease in mobility. As a result of the increase in S, PF and Z improved by 12.11 and 13.7%, respectively, in the 30 kGy gamma- irradiated crystals. Both RH （BIIc） and S⊥c were positive, suggesting that the prepared Sb2Te3 crystals retained the p-type semiconductivity after these treatments.

关键词： antimony telluride Physical vapor deposition Irradiation Annealing Conductivity Seebeck coefficient

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ALD growth of ultra-thin Co layers on the topological insulator Sb2Te3

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Nano Research 2020年第2期13卷 570-575页

作者： Emanuele Longo Roberto Mantovan Raimondo Cecchini Michael D.Overbeek Massimo Longo Giovanna Trevisi Laura Lazzarini Graziella Tallarida Marco Fanciulli Charles H.Winter Claudia Wiemer CNR-IMM Unit of Agrate BrianzaVia C.Olivetti 2Agrate Brianza(MB)20864Italy Universitàdegli Studi di Milano-Bicocca Dipartimento di Scienza dei MaterialiVia R.Cozzi 55Milano 20125Italy Department of chemistry Wayne State UniversityDetroitMichigan 48202USA CNR-IMEM Parco Area delle Scienze 37/AParma 43124Italy

Taking the full advantage of the conformal growth characterizing atomic layer deposition(ALD),the possibility to grow Co thin films,with thickness from several tens down to few nanometers on top of a granular topological insulator(TI)Sb2Tes film,exhibiting a quite high surface roughness(2-5 nm),was *** study the Co growth on the Sb2Tes substrate,we performed simultaneous Co depositions also on sputtered Pt substrates for *** conducted a thorough chemical-structural characterization of the Co/Sb2Tes and Co/Pt heterostructures,confirming for both cases,not only an excellent conformality,but also the structural continuity of the Co layers.X-ray diffraction(XRD)and high-resolution transmission electron microscope(HRTEM)analyses evidenced that Co on Sb2Te3 grows preferentially oriented along the[0oe]direction,following the underlying rhombohedric ***,Co crystallizes in a cubic phase oriented along the[111]direction when deposited on *** work shows that,in case of deposition of crystalline materials,the ALD surface selectivity and conformality can be extended to the definition of local epitaxy,where in-plane ordering of the crystal structure and mosaicity of the developed crystallized grains are dictated by the underlying ***,a highly sharp and chemically-pure Co/Sb2Tes interface was evidenced,which is promising for the application of this growth process for spintronics.

关键词： atomic layer deposition X-ray diffraction Co-fcc Co-hep antimony telluride metal organic chemical vapor deposition spintronics

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Multi-level phase-change memory with ultralow power consumption and resistance drift

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Science Bulletin 2021年第21期66卷 2217-2224,M0004页

作者： Bin Liu Kaiqi Li Wanliang Liu Jian Zhou Liangcai Wu Zhitang Song Stephen R.Elliott Zhimei Sun School of Materials Science and Engineering Beihang UniversityBeijing 100191China Center for Integrated Computational Materials Engineering International Research Institute for Multidisciplinary ScienceBeihang UniversityBeijing 100191China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China College of Science Donghua UniversityShanghai 201620China Department of Chemistry University of CambridgeCambridge CB21EWUK Physical and Theoretical Chemistry Laboratory University of OxfordOxford OX13QZUK

By controlling the amorphous-to-crystalline relative volume,chalcogenide phase-change memory materials can provide multi-level data storage(MLS),which offers great potential for high-density storageclass memory and neuro-inspired ***,this type of MLS system suffers from high power consumption and a severe time-dependent resistance increase(‘‘drift")in the amorphous phase,which limits the number of attainable storage ***,we report a new type of MLS system in yttriumdoped antimony telluride,utilizing reversible multi-level phase transitions between three states,i.e.,amorphous,metastable cubic and stable hexagonal crystalline phases,with ultralow power consumption(0.6–4.3 p J)and ultralow resistance drift for the lower two states(power-law exponent<0.007).The metastable cubic phase is stabilized by yttrium,while the evident reversible cubic-to-hexagonal transition is attributed to the sequential and directional migration of Sb ***,the decreased heat dissipation of the material and the increase in crystallinity contribute to the overall high *** study opens a new way to achieve advanced multi-level phase-change memory without the need for complicated manufacturing procedures or iterative programming operations.

关键词： Phase-change memory Multi-level storage antimony telluride Yttrium doping Power consumption Resistance drift

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