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Influence of using amorphous silicon stack as front heterojunction structure on performance of interdigitated back contact-heterojunction solar cell （IBC-HJ）

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Frontiers in Energy 2017年第1期11卷 96-104页

作者： Rui JIA Ke TAO Qiang LI Xiaowan DAI Hengchao SUN Yun SUN Zhi JIN Xinyu LIU Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China

Interdigitated back contact-heterojunction （IBC-HJ） solar cells can have a conversion efficiency of over 25%. However, the front surface passivation and structure have a great influence on the properties of the IBC-HJ solar cell. In this paper, detailed numerical simulations have been performed to investigate the potential of front surface field （FSF） offered by stack of n-type doped and intrinsic amorphous silicon （a-Si） layers on the front surface of IBC-HJ solar cells. Simulations results clearly indicate that the electric field of FSF should be strong enough to repel minority carries and cumulate major carriers near the front surface. However, the overstrong electric field tends to drive electrons into a-Si layer, leading to severe recombination loss. The n-type doped amorphous silicon （n-a-Si） layer has been optimized in terms of doping level and thickness. The optimized intrinsic amorphous silicon （i-a-Si） layer should be as thin as possible with an energy band gap （Es） larger than 1.4 eV. In addition, the simulations concerning interface defects strongly suggest that FSF is essential when the front surface is not passivated perfectly. Without FSF, the IBC-HJ solar cells may become more sensitive to interface defect density.

关键词： amorphous silicon front surface field simulations interdigitated back contact-heterojunction solar cells

Significant“smaller is softer”in amorphous silicon via irradiation-me diate d surface modification

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Journal of Materials Science & Technology 2023年第35期166卷 106-112页

作者： Yuecun Wang Lin Tian Meng Li Zhiwei Shan Center for Advancing Materials Performance from the Nanoscale(CAMP-Nano)&Hysitron Applied Research Center in China(HARCC) State Key Laboratory for Mechanical Behavior of MaterialsXi’an Jiaotong UniversityXi’an 710049China Institute of Materials Physics University of GöttingenGöttingen 37077Germany Department of Chemical and Petroleum Engineering University of PittsburghPittsburghPA 15216United States of America

“Smaller is softer”is a reverse size dependence of strength,defying the“smaller is stronger”*** usually results from surface-mediated displacive or diffusive deformation and is mainly found in some ultra-small-scale(below tens of nanometers)metallic ***,making use of the surface modifi-cation via ion beam irradiation,we bring the“smaller is softer”into being in a covalently-bonded,hard,and brittle material-amorphous Si(a-Si)at a much larger size regime(amorphous solids but also of practical relevance to the utility of a-Si in microelectronics and microelectromechanical systems.

关键词： amorphous silicon Micropillars “Smaller is softer” Ion irradiation

Properties of boron doped ZnO films prepared by reactive sputtering method: Application to amorphous silicon thin film solar cells

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Journal of Materials Science & Technology 2020年第20期52卷 136-143页

作者： Sukanta Bose Sourav Mandal Asok K.Barua Sumita Mukhopadhyay Centre of Excellence for Green Energy and Sensor Systems Indian Institute of Engineering Science and TechnologyShibpurHowrah 711103West BengalIndia Centre for Energy Studies Indian Institute of Technology DelhiNew Delhi 110016India

Reactive sputtered boron-doped zinc oxide(BZO) film was deposited from argon,hydrogen and boron gas *** reactive sputtering technique provides us the flexibility of changing the boron concentration in the produced films by using the same intrinsic zinc oxide *** surface was obtained in the as-deposited *** surface morphology and the opto-electronic properties of the films can be controlled by simply varying the gas concentration *** varying the gas concentration ratio,the best obtained resistivity ~6.51×10^-4Ω-cm,mobility ~19.05 cm^2 V^-1 s^-1 and sheet resistance ~7.23Ω/□ were *** lower wavelength of light,the response of the deposited films improves with the increase of boron in the gas mixture and the overall transmission in the wavelength region 350-1100 nm of all the films are>85 %.We also fabricated amorphous silicon(a-Si) thin film solar cell on the best obtained BZO *** overall efficiency of the a-Si solar cell is 8.14 %,found on optimized BZO layer.

关键词： Magnetron reactive sputtering BZO amorphous silicon Solar cells Zinc oxide(ZnO)

Spatially-Resolved Crystallization of amorphous silicon Films on the Glass Substrate by Multi-beam Laser Interference

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Journal of Materials Science & Technology 2007年第4期23卷 465-467页

作者： Zhongfan LIU Xuede YUAN Xue HAO F.Muecklich College of Physical Science and Technology Dalian University Dalian 116622 China Institute of Functional Materials University of Saarland Saarbruecken 66123 Germany

Laser interference induced crystallization of amorphous silicon （a-Si） on the glass substrate was performed using a Q-switched Nd：YAG （yttrium aluminum garnet） laser. White light interferometer （WLI） and atomic force microscope （AFM） were used to characterize the morphology of the structured films, while X-ray diffraction （XRD）, combined with the AFM, was used to analyse the crystalline structure of the film. The experimental results show that the laser energy density above a certain threshold, in the range of 400-500 mJ/cm2,triggers the patterned crystallizations which take the form similar to the laser intensity distribution. For the patterned crystallization under multipulse exposure, a definite polycrystalline structure with individual phases was observed by XRD. The difference in feature form, e.g., deepened craters or heightened lines, is related to the laser energy density relative to the threshold of evaporation of the material.

关键词： Pulsed laser Laser interference amorphous silicon Crystallization

Interface states study of intrinsic amorphous silicon for crystalline silicon surface passivation in HIT solar cell

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Chinese Physics B 2017年第4期26卷 489-493页

作者：肖友鹏魏秀琴周浪 Institute of Photovoltaic/School of Materials Science and Engineering Nanchang UniversityNanchang 330031China

Intrinsic hydrogenated amorphous silicon（a-Si：H） film is deposited on n-type crystalline silicon（c-Si） wafer by hotwire chemical vapor deposition（HWCVD） to analyze the amorphous/crystalline heterointerface passivation *** minority carrier lifetime of symmetric heterostructure is measured by using Sinton Consulting WCT-120 lifetime tester system,and a simple method of determining the interface state density（D_（it）） from lifetime measurement is *** interface state density（D_（it）） measurement is also performed by using deep-level transient spectroscopy（DLTS） to prove the validity of the simple *** microstructures and hydrogen bonding configurations of a-Si：H films with different hydrogen dilutions are investigated by using spectroscopic ellipsometry（SE） and Fourier transform infrared spectroscopy（FTIR） *** values of interface state density（D_（it）） are obtained by using a-Si：H film with more uniform,compact microstructures and fewer bulk defects on crystalline silicon deposited by HWCVD.

关键词： amorphous silicon microstructure hydrogen bonding configurations interface state density

Structural and Dynamic Properties of amorphous silicon： Tight-Binding Molecular Dynamics Simulation

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Chinese Physics Letters 2004年第12期21卷 2482-2485页

作者：黄世萍汪文川 DivisionofMolecularandMaterialsSimulation KeyLaboratoryforNanomaterialsofMinistryofEducationBeijingUniversityofChemicalandTechnologyBeijing100029

The tight-binding molecular dynamics simulation has been performed to study structural and dynamical properties of amorphous silicon. It is found that the radial distribution function and static structure factor are in good agreement with the experimental measurements. The bond order parameters Ql are sensitive to the structure change at different quenching rates. For the dynamical properties, we have calculated the vibration and electronic density of states. The simulation results show that the transverse acoustic is in good agreement with the experimental data, and the high frequency transverse optical (TO) peak shifts to the right of the experimental TO peak.

关键词： amorphous silicon

History of the amorphous silicon on Crystalline silicon Heterojunction Solar Cell

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Journal of Energy and Power Engineering 2011年第3期5卷 222-226页

作者： H.C. Neitzert W.R. Fahrner Department of Electrical Engineering （DIIIE） Salerno University 84084 Fisciano （SA） Italy School of Photovoltaics University of Nanchang China

Some commercially available solar panels with very high efficiencies for terrestrial photovoltaic applications are based on the amorphous silicon on crystalline silicon material system. This type ofheterostructure has more than 40 years＇ old history. The early development of the technology and the results, obtained in the last years with this type of solar cell are reviewed. In particular it is demonstrated why the physical understanding of the interface properties and band-structure was important for the development of high efficiency solar cells.

关键词： History solar cell amorphous silicon crystalline silicon heterojunction.

Solid-phase Crystallization of amorphous silicon Films by Rapid Thermal Annealing

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Semiconductor Photonics and Technology 2005年第1期11卷 37-39页

作者： JINRui-min LUJing-xiao LIRui WANGHai-yan FENGTuan-hui Lab.ofMater.Phys.ofMEC ZhengzhouUniversityZhengzhou450052CHN

The morphous silicon films prepared by PECVD at substrate temperatures of 30℃ have been crystallized by rapid thermal annealing method, the budget of time-temperature in the annealing process is 600℃ for 120s, 850℃ for 120s, and 950℃ for 120s. The results indicate the crystallization at 850℃ and 950℃ are better as shown in micro-Raman scattering and scanning electronic microscope.

关键词： amorphous silicon solid-phase crystallization rapid thermal annealing

A fast method to diagnose phase transition from amorphous to microcrystalline silicon

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Science China(Physics,Mechanics & Astronomy) 2007年第6期50卷 731-736页

作者： HOU GuoFu XUE JunMing YUAN YuJie SUN Jian ZHAO Ying GENG XinHua Institute of Photoelectronics Nankai UniversityTianjin 300071China Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technique Tianjin 300071China Key Laboratory of Optoelectronic Information Science and Technology of Ministry of Education of China Tianjin 300071China

A series of hydrogenated silicon thin films were prepared by the radio frequency plasma enhanced chemical vapor deposition method (RF-PECVD) with various si-lane concentrations. The influence of silane concentration on structural and elec-trical characteristics of these films was investigated to study the phase transition region from amorphous to microcrystalline phase. At the same time,optical emis-sion spectra (OES) from the plasma during the deposition process were monitored to get information about the plasma properties,Raman spectra were measured to study the structural characteristics of the deposited films. The combinatorial analysis of OES and Raman spectra results demonstrated that the OES can be used as a fast method to diagnose phase transition from amorphous to microcrystalline silicon. At last the physical mechanism,why both OES and Raman can be used to diagnose the phase transition,was analyzed theoretically.

关键词： amorphous silicon microcrystalline silicon phase transition optical emission spectroscopy