Properties of boron doped ZnO films prepared by reactive sputtering method: Application to amorphous silicon thin film solar cells

作     者：Sukanta Bose Sourav Mandal Asok K.Barua Sumita Mukhopadhyay Sukanta Bose;Sourav Mandal;Asok K.Barua;Sumita Mukhopadhyay

作者机构：Centre of Excellence for Green Energy and Sensor SystemsIndian Institute of Engineering Science and TechnologyShibpurHowrah 711103West BengalIndia Centre for Energy StudiesIndian Institute of Technology DelhiNew Delhi 110016India 

出 版 物：《Journal of Materials Science & Technology》 (材料科学技术（英文版）)

年 卷 期：2020年第52卷第20期

页      面：136-143页

核心收录：

学科分类：07[理学] 0817[工学-化学工程与技术] 0806[工学-冶金工程] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 0802[工学-机械工程] 0801[工学-力学（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：The work has been supported by the Science and Engineering Research Board(SERB) Department of Science and Technology(SR/FTP/PS-175/2012) 

主　　题：Magnetron reactive sputtering BZO Amorphous silicon Solar cells Zinc oxide(ZnO) 

摘      要：Reactive sputtered boron-doped zinc oxide(BZO) film was deposited from argon,hydrogen and boron gas *** reactive sputtering technique provides us the flexibility of changing the boron concentration in the produced films by using the same intrinsic zinc oxide *** surface was obtained in the as-deposited *** surface morphology and the opto-electronic properties of the films can be controlled by simply varying the gas concentration *** varying the gas concentration ratio,the best obtained resistivity ~6.51×10^-4Ω-cm,mobility ~19.05 cm^2 V^-1 s^-1 and sheet resistance ~7.23Ω/□ were *** lower wavelength of light,the response of the deposited films improves with the increase of boron in the gas mixture and the overall transmission in the wavelength region 350-1100 nm of all the films are85 %.We also fabricated amorphous silicon(a-Si) thin film solar cell on the best obtained BZO *** overall efficiency of the a-Si solar cell is 8.14 %,found on optimized BZO layer.