Properties of boron doped ZnO films prepared by reactive sputtering method: Application to amorphous silicon thin film solar cells
Properties of boron doped ZnO films prepared by reactive sputtering method: Application to amorphous silicon thin film solar cells作者机构:Centre of Excellence for Green Energy and Sensor SystemsIndian Institute of Engineering Science and TechnologyShibpurHowrah 711103West BengalIndia Centre for Energy StudiesIndian Institute of Technology DelhiNew Delhi 110016India
出 版 物:《Journal of Materials Science & Technology》 (材料科学技术(英文版))
年 卷 期:2020年第52卷第20期
页 面:136-143页
核心收录:
学科分类:07[理学] 0817[工学-化学工程与技术] 0806[工学-冶金工程] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学] 0703[理学-化学] 0802[工学-机械工程] 0801[工学-力学(可授工学、理学学位)] 0702[理学-物理学]
基 金:The work has been supported by the Science and Engineering Research Board(SERB) Department of Science and Technology(SR/FTP/PS-175/2012)
主 题:Magnetron reactive sputtering BZO Amorphous silicon Solar cells Zinc oxide(ZnO)
摘 要:Reactive sputtered boron-doped zinc oxide(BZO) film was deposited from argon,hydrogen and boron gas *** reactive sputtering technique provides us the flexibility of changing the boron concentration in the produced films by using the same intrinsic zinc oxide *** surface was obtained in the as-deposited *** surface morphology and the opto-electronic properties of the films can be controlled by simply varying the gas concentration *** varying the gas concentration ratio,the best obtained resistivity ~6.51×10^-4Ω-cm,mobility ~19.05 cm^2 V^-1 s^-1 and sheet resistance ~7.23Ω/□ were *** lower wavelength of light,the response of the deposited films improves with the increase of boron in the gas mixture and the overall transmission in the wavelength region 350-1100 nm of all the films are85 %.We also fabricated amorphous silicon(a-Si) thin film solar cell on the best obtained BZO *** overall efficiency of the a-Si solar cell is 8.14 %,found on optimized BZO layer.