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A Design and Comparative Investigation of Graded AlxGa1–xN EBL for W-B0.375Ga N/W-B0.45GaN Edge Emitting Laser Diode on AlN Substrate

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Chinese Journal of Electronics 2022年第4期31卷 683-689页

作者： NIASS Mussaab I. WANG Fang LIU Yuhuai National Center for International Joint Research of Electronic Materials and Systems International Joint-Laboratory of Electronic Materials and Systems of Henan Province School of Information EngineeringZhengzhou University Zhengzhou Way Do Electronics Co.Ltd. Research Institute of Industrial Technology Co.Ltd. Zhengzhou University Institute of Materials and Systems for Sustainability Nagoya University

In this paper, we numerically demonstrated the possibility of using wurtzite boron gallium nitride(W-BGa N) as active layers(quantum well and quantum barriers) along with aluminum gallium nitride(Al Ga N) to achieve lasing at a deep ultraviolet range at 263nm for edge emitting laser diode. The laser diode structure simulations were conducted by using the CrosslightLASTIP software with a self-consistency model for varies quantity calculations. Moreover, multiple designed structures such as full and half have been achieved as well as the study of the effect of grading engineering/techniques at the electron blocking layer for linearly-graded-down and linearly-graded-up grading techniques were also emphasized. As a result, a maximum emitted power of 26 W,a minimum threshold current of 308 m A, a slope efficiency of 2.82 W/A, and a minimum p-type resistivity of0.228 Ω·cm from the different doping concentrations and geometrical distances were thoroughly observed and jotted down.

关键词： electron blocking layer edge emitting laser diode linearly-graded-down grading techniques gallium compounds quantum well lasers Lasing action in semiconductors wide band gap semiconductors slope efficiency crosslight-LASTIP software deep ultraviolet range linearly-graded-up grading techniques III-V semiconductors Semiconductor lasers II-VI and III-V semiconductors boron compounds substrate aluminium compounds Design of specific laser systems self-consistency model optical design techniques wurtzite boron gallium nitride quantum barriers aluminum gallium nitride

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Small Signal Non-Quasi-Static Model for AlGaN/GaN MODFETs

Small Signal Non-Quasi-Static Model for AlGaN/GaN MODFETs

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2004 7th International Conference on Solid-State and Integrated Circuits Technology（ICSICT 2004）

作者： Radhika Chintakayala Ibrahim Abdel-Motaleb Department of Electrical Engineering Northern Illinois UniversityDeKalb IL USA 60115

＜正＞A simple non-quasi-static model for AlGaN/GaN MODFETs has been *** a DC model has been obtained,where the effects of spontaneous and piezoelectric polarization,as well as the strain due to aluminum mole fractions are *** this DC model,a small signal Non-Quasi-Static model is *** results show that the proposed model can predict the DC and the small signal characteristics of the device with high degrees of accuracy.

关键词： aluminum gallium nitride gallium nitride MODFETs HEMTs Piezoelectric polarization Equations Electrons Capacitive sensors Predictive models Epitaxial layers

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