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Review of encapsulation materials for algan-based deep-ultraviolet light-emitting diodes

Photonics Research 2019年第8期7卷 812-822页

作者： YOSUKE NAGASAWA AKIRA HIRANO UV Craftory Co. Ltd.

This paper reviews and introduces the techniques for boosting the light-extraction efficiency(LEE) of alganbased deep-ultraviolet(DUV: λ < 300 nm) light-emitting diodes(LEDs) on the basis of the discussion of their molecular structures and optical characteristics, focusing on organoencapsulation materials. Comparisons of various fluororesins, silicone resin, and nonorgano materials are described. The only usable organomaterial for encapsulating DUV-LEDs is currently considered to be polymerized perfluoro(4-vinyloxy-1-butene)(p-BVE)terminated with a —CF3 end group. By forming hemispherical lenses on DUV-LED dies using p-BVE having a —CF3 end group with a refractive index of about 1.35, the LEE was improved by 1.5-fold, demonstrating a cost-feasible packaging technique.

关键词： CF PDD algan algan-based deep-ultraviolet light-emitting diodes

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MOVPE-grown algan-based tunnel heterojunctions enabling fully transparent UVC LEDs

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Photonics Research 2019年第5期7卷 I0008-I0012页

作者： Christian Kuhn Luca Sulmoni Martin Guttmann Johannes Glaab Norman Susilo Tim Wernicke Markus Weyers Michael Kneissl Technische Universitat Berlin Institute of Solid State Physics Hardenbergstr. 36 EW6-1 10623 Berlin Germany Ferdinand-Braun-Institut Leibniz-Institut fur Hochstfrequenztechnik Gustav-Kirchhoff-Str. 4 12489 Berlin Germany

We report on algan-based tunnel heterojunctions grown by metalorganic vapor phase epitaxy enabling fully transparent UVC LEDs by eliminating the absorbing p-algan and p-GaN layers. Furthermore, the electrical characteristics can be improved by exploiting the higher conductivity of n-algan layers as well as a lower resistance of n-contacts. UVC LEDs with algan:Mg/algan:Si tunnel junctions exhibiting single peak emission at268 nm have been realized, demonstrating effective carrier injection into the algan multiple quantum well active region. The incorporation of a low band gap interlayer enables effective tunneling and strong voltage ***, the interlayer thickness is systematically varied. Tunnel heterojunction LEDs with an 8 nm thick GaN interlayer exhibit continuous-wave emission powers >3 m W near thermal rollover. External quantum efficiencies of 1.4% at a DC current of 5 m A and operating voltages of 20 V are measured on-wafer. Laterally homogeneous emission is demonstrated by UV-sensitive electroluminescence microscopy images. The complete UVC LED heterostructure is grown in a single epitaxy process including in situ activation of the magnesium acceptors.

关键词： MOVPE-grown algan-based UVC LEDs

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