MOVPE-grown AlGaN-based tunnel heterojunctions enabling fully transparent UVC LEDs
MOVPE-grown AlGaN-based tunnel heterojunctions enabling fully transparent UVC LEDs作者机构:Technische Universitat Berlin Institute of Solid State Physics Hardenbergstr. 36 EW6-1 10623 Berlin Germany Ferdinand-Braun-Institut Leibniz-Institut fur Hochstfrequenztechnik Gustav-Kirchhoff-Str. 4 12489 Berlin Germany
出 版 物:《Photonics Research》 (光子学研究(英文版))
年 卷 期:2019年第7卷第5期
页 面:I0008-I0012页
核心收录:
学科分类:0808[工学-电气工程] 0809[工学-电子科学与技术(可授工学、理学学位)] 07[理学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0702[理学-物理学]
基 金:Bundesministerium für Bildung und Forschung(BMBF)“Advanced UV for Life” Project(03ZZ0134C) Deutsche Forschungsgemeinschaft(DFG)Collaborative Research Centre “Semiconductor Nanophotonics”(CRC787 9315)
主 题:MOVPE-grown AlGaN-based UVC LEDs
摘 要:We report on AlGaN-based tunnel heterojunctions grown by metalorganic vapor phase epitaxy enabling fully transparent UVC LEDs by eliminating the absorbing p-AlGaN and p-GaN layers. Furthermore, the electrical characteristics can be improved by exploiting the higher conductivity of n-AlGaN layers as well as a lower resistance of n-contacts. UVC LEDs with AlGaN:Mg/AlGaN:Si tunnel junctions exhibiting single peak emission at268 nm have been realized, demonstrating effective carrier injection into the AlGaN multiple quantum well active region. The incorporation of a low band gap interlayer enables effective tunneling and strong voltage ***, the interlayer thickness is systematically varied. Tunnel heterojunction LEDs with an 8 nm thick GaN interlayer exhibit continuous-wave emission powers 3 m W near thermal rollover. External quantum efficiencies of 1.4% at a DC current of 5 m A and operating voltages of 20 V are measured on-wafer. Laterally homogeneous emission is demonstrated by UV-sensitive electroluminescence microscopy images. The complete UVC LED heterostructure is grown in a single epitaxy process including in situ activation of the magnesium acceptors.