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Characterization of 4h-sic substrates and epilayers by Fourier transform infrared reflectance spectroscopy

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Chinese Physics B 2012年第4期21卷 548-554页

作者：董林孙国胜郑柳刘兴昉张峰闫果果赵万顺王雷李锡光王占国 Material Science Center Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Key Laboratory of Semiconductor Material Sciences Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Dongguan Tianyu Semiconductor Inc. Dongguan 523000China

The infrared reflectance spectra of both 4h sic substrates and epilayers are measured in a wave number range from 400 cm 1 to 4000 cm-1 using a Fourier-transform spectrometer. The thicknesses of the 4h-sic epilayers and the electrical properties, including the free-carrier concentrations and the mobilities of both the 4h sic substrates and the epilayers, are characterized through full line-shape fitting analyses. The correlations of the theoretical spectral profiles with the 4h-sic electrical properties in the 30 cm-1-4000 cm 1 and 400 cm-1-4000 cm-1 spectral regions are established by introducing a parameter defined as error quadratic sum. It is indicated that their correlations become stronger at a higher carrier concentration and in a wider spectral region （30 cm-1-4000 cm-1）. These results suggest that the infrared reflectance technique can be used to accurately determine the thicknesses of the epilayers and the carrier concentrations, and the mobilities of both lightly and heavily doped 4h-sic wafers.

关键词： 4h sic infrared reflectance epilayer thickness electrical properties

Study and optimal simulation of 4h-sic floating junction Schottky barrier diodes' structures and electric properties

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Chinese Physics B 2010年第10期19卷 505-509页

作者：南雅公蒲红斌曹琳任杰 Department of Electric Engineering Faculty of Automation and Information Engineering Xi'an University of Technology Department of Physics and Electronics Hexi University

This paper stuides the structures of 4h sic floating junction Schottky barrier diodes. Some structure parameters of devices are optimized with commercial simulator based on forward and reverse electrical characteristics. Compared with conventional power Schottky barrier diodes, the devices are featured by highly doped drift region and embedded floating junction layers, which can ensure high breakdown voltage while keeping lower specific on-state resistance, and solve the contradiction between forward voltage drop and breakdown voltage. The simulation results show that with optimized structure parameter, the breakdown voltage can reach 4.36 kV and the specific on-resistance is 5.8 mΩ.cm2 when the Baliga figure of merit value of 13.1 GW/cm2 is achieved.

关键词： 4h sic floating junction Schottky barrier diode optimization

Simulation research on offset field-plate used as edge termination in 4h-sic merged PiN-Schottky diodes

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Chinese Physics B 2010年第4期19卷 394-397页

作者：陈丰平张玉明张义门吕红亮宋庆文 School of Microelectronics Key Laboratory of Wide Band-Gap Semiconductor Materials and DevicesXidian University

A new structure of 4h-silicon carbide （sic） merged PiN-Schottky （MPS） diodes with offset field-plate （FP） as edge termination is developed. To understand the influences of 4h-sic MPS diodes with offset FP on the characteristics, simulations have been done by using ISE TCAD. Related factors of offset FP have been studied as well to optimise the reverse characteristics of 4h sic MPS diodes. The simulation results show that the device using offset FP can create a higher blocking voltage under reverse bias as compared with that using field guard rings. Besides, the offset FP does not cause any extra steps in the manufacture of MPS diodes.

关键词： 4h sic merged PiN-Schottky offset field-plate reverse characteristics