Simulation research on offset field-plate used as edge termination in 4H-SiC merged PiN-Schottky diodes

作     者：陈丰平 张玉明 张义门 吕红亮 宋庆文 

作者机构：School of MicroelectronicsKey Laboratory of Wide Band-Gap Semiconductor Materials and DevicesXidian University 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2010年第19卷第4期

页      面：394-397页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Project supported by Applied Materials Innovation Fund (Grant No. XA-AM-200702) the 13115 Innovation Engineering of Shaanxi Province,China (Grant No. 2008ZDKG-30) 

主　　题：4H SiC merged PiN-Schottky offset field-plate reverse characteristics 

摘      要：A new structure of 4H-silicon carbide （SIC） merged PiN-Schottky （MPS） diodes with offset field-plate （FP） as edge termination is developed. To understand the influences of 4H-SiC MPS diodes with offset FP on the characteristics, simulations have been done by using ISE TCAD. Related factors of offset FP have been studied as well to optimise the reverse characteristics of 4H SiC MPS diodes. The simulation results show that the device using offset FP can create a higher blocking voltage under reverse bias as compared with that using field guard rings. Besides, the offset FP does not cause any extra steps in the manufacture of MPS diodes.