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Anisotropic optical and electronic properties of two- dimensional layered germanium sulfide

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Nano Research 2017年第2期10卷 546-555页

作者： dezhi Tan Hong En Lim Feijiu Wang Nur Baizura Mohamed Shinichiro Mouri Wenjin Zhang Yuhei Miyauchi Mari Ohfuchi Kazunari Matsuda Institute of Advanced Energy Kyoto University Uji Kyoto 611-001 I Japan Fujitsu Laboratories Ltd. Atsugi 243-0197 Japan

Two-dimensional （2d） layered materials, transition-metal dichalcogenides, and black phosphorus have attracted considerable interest from the viewpoints of fundamental physics and device applications. The establishment of new functionalities in anisotropic layered 2d materials is a challenging but rewarding frontier, owing to the remarkable optical properties of these materials and their prospects for new devices. Herein, we report the anisotropic and thickness- dependent optical properties of a 2d layered monochalcogenide of germanium sulfide （GeS）. Three Raman-scattering peaks corresponding to the B3g,, A1g, and A2g modes with a strong polarization dependence are demonstrated in the GeS flakes, which validates polarized Raman spectroscopy as an effective method for identifying the crystal orientation of anisotropic layered GeS. Photoluminescence （PL） is observed with a peak at -1.66 eV that originates from the direct optical transition in GeS at room temperature. The polarization-dependent characteristics of the PL, which are revealed for the first time, along with the demonstration of anisotropic absorption, indicate an obvious anisotropic optical transition near the band edge of GeS, which is supported by density functional theory calculations. The significantly thickness-dependent PL is observed and discussed. This anisotropic layered GeS presents opportunities for the discovery of new physical phenomena and will find applications that exploit its anisotropic properties, such as polarization-sensitive photodetectors.

关键词： germanium sulfide anisotropic optical property 2d layered materials photoluminescence polarized optical spectroscopy

Recent advances in two-dimensional layered and non-layered materials hybrid heterostructures

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Chinese Physics B 2022年第10期31卷 231-246页

作者： Haixin Ma Yanhui Xing Boyao Cui Jun Han Binghui Wang Zhongming Zeng Key Laboratory of Opto-electronics Technology Ministry of EducationCollege of MicroelectronicsBeijing University of TechnologyBeijing 100124China Key Laboratory of Nanodevices and Applications Suzhou Institute of Nano-tech and Nano-bionicsChinese Academy of SciencesSuzhou 215123China Nanchang Nano-devices and Technologies division Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesNanchang 330200China

With the development of Moore's law, the future trend of devices will inevitably be shrinking and integration to further achieve size reduction. The emergence of new two-dimensional non-layered materials(2dNLMs) not only enriches the 2d material family to meet future development, but also stimulates the global enthusiasm for basic research and application technologies in the 2d field. Van der Waals(vd W) heterostructures, in which two-dimensional layered materials(2dLMs)are physically stacked layer by layer, can also occur between 2dLMs and 2dNLMs hybrid heterostructures, providing an alternative platform for nanoelectronics and optoelectronic applications. Here, we outline the recent developments of2dLMs/2dNLMs hybrid heterostructures, with particular emphasis on major advances in synthetic methods and applications. And the categories and crystal structures of 2dLMs and 2dNLMs are also shown. We highlight some promising applications of the heterostructures in electronics, optoelectronics, and catalysis. Finally, we provide conclusions and future prospects in the 2d materials field.

关键词： 2d layered materials 2d non-layered materials van der Waals heterostructure applications

Two-dimensional superconducting MoSi2N4(MoN)4n homologous compounds

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National Science Review 2023年第4期10卷 142-149页

作者： Zhibo Liu Lei Wang Yi-Lun Hong Xing-Qiu Chen Hui-Ming Cheng Wencai Ren Shenyang National Laboratory for materials Science Institute of Metal Research Chinese Academy of Sciences School of materials Science and Engineering University of Science and Technology of China Shenzhen Institute of Advanced Technology Chinese Academy of Sciences

The number and stacking order of layers are two important degrees of freedom that can modulate the properties of 2d van der Waals(vdW) materials. However, the layers’ structures are essentially limited to the known layered 3d vdW materials. Recently, a new 2d vdW material, MoSi2N4, without known 3d counterparts, was synthesized by passivating the surface dangling bonds of non-layered 2d molybdenum nitride with elemental silicon, whose monolayer can be viewed as a monolayer MoN(-N-Mo-N-)sandwiched between two Si-N layers. This unique sandwich structure endows the MoSi2N4monolayer with many fascinating properties and intriguing applications, and the surface-passivating growth method creates the possibility of tuning the layer’s structure of 2d vdW materials. Here we synthesized a series of MoSi2N4(MoN)4nstructures confined in the matrix of multilayer MoSi2N4. These super-thick monolayers are the homologous compounds of MoSi2N4, which can be viewed as multilayer MoN(Mo4n+1N4n+2)sandwiched between two Si-N layers. First-principles calculations show that MoSi2N4(MoN)4monolayers have much higher Young’s modulus than Mo N, which is atributed to the strong Si-N bonds on the ***, different from the semiconducting nature of the Mo Si2N4monolayer, the MoSi2N4(MoN)4monolayer is identified as a superconductor with a transition temperature of 9.02 K. The discovery of MoSi2N4(MoN)4nstructures not only expands the family of 2d materials but also brings a new degree of freedom to tailor the structure of 2d vd W materials, which may lead to unexpected novel properties and applications.

关键词： MoSi2N4 2d layered materials homologous compounds idPC-STEM superconduct

Tunnel magnetoresistance with atomically thin two- dimensional hexagonal boron nitride barriers

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Nano Research 2015年第4期8卷 1357-1364页

作者： Andre dankert M. Venkata Kamalakar Abdul Wajid R. S. Patel Saroj P. dash department of Microtechnology and Nanoscience Chalmers University of Technology SE-41296 Goteborg Sweden department of Physics Birla Institute of Technology and Science Pilani--K K Birla Goa Campus Zuarinagar-403 726 Goa India

The two-dimensional atomically thin insulator hexagonal boron nitride （h-BN） constitutes a new paradigm in tunnel based devices. A large band gap, along with its atomically flat nature without dangling bonds or interface trap states, makes it an ideal candidate for tunnel spin transport in spintronic devices. Here, we demonstrate the tunneling of spin-polarized electrons through large area monolayer h-BN prepared by chemical vapor deposition in magnetic tunnel junctions. In ferromagnet/h-BN/ferromagnet heterostructures fabricated on a chip scale, we show tunnel magnetoresistance at room temperature. Measurements at different bias voltages and on multiple devices with different ferromagnetic electrodes establish the spin polarized tunneling using h-BN barriers. These results open the way for integration of 2d monolayer insulating barriers in active spintronic devices and circuits operating at ambient temperature, and for further exploration of their properties and prospects.

关键词： hexagonal boron nitride 2d layered materials CVd spintronics magnetic tunnel junction tunnel magnetoresistance tunnel barrier

Highly sensitive detection of mercury（Ⅱ） ions with few-layer molybdenum disulfide

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Nano Research 2015年第1期8卷 257-262页

作者： Shan Jiang Rui Cheng Rita Ng Yu Huang Xiangfeng duan department of Chemistry and Biochemistry University of California Los Angeles California 90095 USA department of materials Science and Engineering University of California Los Angeles California 90095 USA California Nanosystems Institute University of California Los Angeles California 90095 USA

Two-dimensional （2d） layered transition metal dichalcogenide （TMd） materials （e.g., MoS2） have attracted considerable interest due to their atomically thin geometry and semiconducting electronic properties. With ultrahigh surface to volume ratio, the electronic properties of these atomically thin semiconductors can be readily modulated by their environment. Here we report an investigation of the effects of mercury（II）（Hg^2＋） ions on the electrical transport properties of few-layer molybdenum disulfide （MoS2）. The interaction between Hg^2＋ ions and few-layer MoS2 was studied by field-effect transistor measurements and photoluminescence. due to a high binding affinity between Hg2. ions and the sulfur sites on the surface of MoS2 layers, Hg^2＋ ions can strongly bind to MoS2. We show that the binding of Hg^2＋ can produce a p-type doping effect to reduce the electron concentration in n-type few-layer MoS2. It can thus effectively modulate the electron transport and photoluminescence properties in few-layer MoS2. By monitoring the conductance change of few-layer MoS2 in varying concentration Hg2~ solutions, we further show that few-layer MoS2 transistors can function as highly sensitive sensors for rapid electrical detection of Hg^2＋ ion with a detection limit of 30 pM.

关键词： molybdenum disulfide 2d layered materials mercury doping effect sensors

Recent advance in near-infrared/ultrasound-sensitive 2d-nanomaterials for cancer therapeutics

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Science China materials 2020年第12期63卷 2397-2428页

作者： Wei Yang Qinghua Lyu Jun Zhao Liqi Cao Yi Hao Han Zhang department of Ultrasound Shenzhen HospitalSouthern Medical UniversityShenzhen 518100China Institute of Microscale Optoelectronics Collaborative Innovation Centre for Optoelectronic Science&TechnologyKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceShenzhen Key Laboratory of Micro-Nano Photonic Information TechnologyGuangdong Laboratory of Artificial Intelligence and Digital Economy(SZ)College of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen 518060China School of Ophthalmology&Optometry Affiliated to Shenzhen University Shenzhen 518040China Shenzhen Eye Institute Shenzhen Eye Hospital Affiliated to Jinan UniversityShenzhen 518040China

In recent years,the emerging two-dimensional(2 d)nanomaterials have shown great potential for a variety of applications such as electronics,catalysis,supercapacitors,and energy *** the biomedical arena,these nanomaterials,especially 2 d-ultrathin nanomaterials,have also been regarded as promising nano-carriers and/or diagnostic agents for cancer diagnosis and treatment,owing to their remarkable mechanical,photothermal,and optical *** this review,we provide the recent development of the nanoplatforms based on near-infrared/ultrasound-sensitive 2 d-materials,representatively such as graphdiyne(GdY),black phosphorus,transition metal dichalcogenides(TMds),and antimonene,for non-invasive cancer therapeutics including photothermal,photodynamic and sonodynamic *** general properties of these 2 d nanomaterials linking to biomedical interests are first introduced,followed by the fabrication processes of diverse nano-platforms and related outcomes of cancer diagnosis and *** also outline the current challenges and prospects of the 2 d materials for non-invasive approaches to cancer treatments in the future.

关键词： nanomaterial 2d layered materials photothermal therapy photodynamic therapy sonodynamic therapy

原位集成光浮栅的多层SnS_(2)/少层MoS_(2)异质结用于高性能光电探测器与光学成像

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Science China materials 2023年第5期66卷 1879-1890页

作者：易华鑫杨海林马楚荣马宇航叶俏珏陆健婷王婉郑照强邓泽祥邹逸超姚健东杨国伟 State Key Laboratory of Optoelectronic materials and Technologies Nanotechnology Research CenterSchool of Materials Science&EngineeringSun Yatsen UniversityGuangzhou 510275China Guangzhou Key Laboratory of Flexible Electronic materials and Wearable devices Sun Yat-sen UniversityGuangzhou 510275China Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications Institute of Photonics TechnologyJinan UniversityGuangzhou 511443China School of materials and Energy Guangdong University of TechnologyGuangzhou 510006China School of Science Guilin University of Aerospace TechnologyGuilin 541004China

自单层MoS_(2)光电晶体管问世以来,二维层状材料一直被认为是实现下一代新型光电器件与系统的最引人瞩目的候选材料之一.然而,大多数报道的二维层状材料光电探测器都存在一定的缺点,如响应率低、暗电流大、比探测率低、开关比低、响应... 详细信息

自单层MoS_(2)光电晶体管问世以来,二维层状材料一直被认为是实现下一代新型光电器件与系统的最引人瞩目的候选材料之一.然而,大多数报道的二维层状材料光电探测器都存在一定的缺点,如响应率低、暗电流大、比探测率低、开关比低、响应速率慢等.在本研究中,通过堆叠由大气压化学气相沉积技术所生长的MoS_(2)和SnS_(2)纳米片,制备出了多层SnS_(2)/少层MoS_(2)范德华异质结.相应的SnS_(2)/MoS_(2)异质结光电探测器展示出了具有竞争力的综合性能:大开关比(171)、高响应率(28.3 A W^(-1)),以及出色的比探测率(1.2×10^(13)Jones).此外,该器件还实现了响应/恢复时间低至1.38 ms/600μs的超快响应速率.其优异的性能与SnS_(2)/MoS_(2)异质结的Ⅱ型能带排列以及原位形成的无缝光浮栅的协同作用相关,这有助于分离光激发的电子-空穴对,并延长非平衡载流子的寿命.得益于出色的光敏性,该SnS_(2)/MoS_(2)器件实现了概念验证的光学成像应用.总体而言,本研究为实现具有优异综合性能的先进光电探测器提供了独特视角.

关键词： in-situ floating photogate 2d layered materials van der Waals heterojunctions photodetectors optical imaging

Extensive study of optical contrast between bulk and nanoscale transition metal dichalcogenide semiconductors

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Journal of Semiconductors 2021年第8期42卷 45-54页

作者： Ankush Parmar Jashangeet Kaur Manish dev Sharma Navdeep Goyal Centre of Applied Sciences Department of PhysicsSector-14Panjab UniversityChandigarh 160014India department of Physics G.G.D.S.D CollegeSector-32Chandigarh 160030India

A remarkable refinement in the optical behavior of two-dimensional transition metal dichalcogenides(TMds)has been brought to light when cleaved from their respective *** atomically thin direct bandgap semiconductors are highly responsive to optical energy which proposes the route for futuristic photonic *** this manuscript,we have substantially focused on the optical study of MoS_(2)and WS_(2)nanosheets and comparative analysis with their bulk *** synthesis of nanosheets has been accomplished with liquid exfoliation followed by fabrication of thin films with drop-casting technique.X-ray diffraction and field emission scanning electron microscopy affirmed the morphology,whereas,UV-visible spectroscopy served as the primary tool for optical *** was observed that several parameters,like optical conductivity,optical band-gap energy *** enhanced statistics in the case of exfoliated nanosheets as compared to their respective *** researchers have touched upon this analysis for MoS_(2),but it is completely novel for WS_(2).We expect our work to clearly distinguish between the optical behaviors of nanoscale and bulk TMds so as to intensify and strengthen the research related to 2d-layered materials for optoelectronic and photovoltaic applications.

关键词： transition metal dichalcogenides 2d layered materials optical properties liquid phase exfoliation thin films dropcasting

Research Advances of Typical Two dimensional layered Thermoelectric materials

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Research and Application of materials Science 2020年第2期2卷 1-11页

作者： Haihua HUANG Xiaofeng FAN Key Laboratory of Automobile materials(Jilin University) Ministry of Educationand College of Materials Science and EngineeringJilin UniversityChangchun130012China

Thermoelectric technologies have caught our intense attention due to their ability of heat conversion into *** considerable efforts have been taken to develop and enhance thermoelectric properties of materials over the past several ***,twodimensional layered materials are making the promise for potential applications of thermoelectric devices because of the excellent physical and structural ***,a comprehensive coverage about recent progresses in thermoelectric properties of typical two dimensional(2d)layered materials,including the theoretical and experimental results,is ***,the potential applications of 2d thermoelectric materials are also *** results indicate that the development of 2d thermoelectric materials take a key role in the flexible electronic devices with thermoelectric technologies.

关键词： thermoelectric properties transport properties 2d layered materials figure of merit,first-principle calculations