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Two-dimensional superconducting MoSi2N4(MoN)4n homologous compounds

National Science Review 2023年第4期10卷 142-149页

作者： Zhibo Liu Lei Wang Yi-Lun Hong Xing-Qiu Chen Hui-Ming Cheng Wencai Ren Shenyang National Laboratory for materials Science Institute of Metal Research Chinese Academy of Sciences School of materials Science and Engineering University of Science and Technology of China Shenzhen Institute of Advanced Technology Chinese Academy of Sciences

The number and stacking order of layers are two important degrees of freedom that can modulate the properties of 2d van der Waals(vdW) materials. However, the layers’ structures are essentially limited to the known layered 3d vdW materials. Recently, a new 2d vdW material, MoSi2N4, without known 3d counterparts, was synthesized by passivating the surface dangling bonds of non-layered 2d molybdenum nitride with elemental silicon, whose monolayer can be viewed as a monolayer MoN(-N-Mo-N-)sandwiched between two Si-N layers. This unique sandwich structure endows the MoSi2N4monolayer with many fascinating properties and intriguing applications, and the surface-passivating growth method creates the possibility of tuning the layer’s structure of 2d vdW materials. Here we synthesized a series of MoSi2N4(MoN)4nstructures confined in the matrix of multilayer MoSi2N4. These super-thick monolayers are the homologous compounds of MoSi2N4, which can be viewed as multilayer MoN(Mo4n+1N4n+2)sandwiched between two Si-N layers. First-principles calculations show that MoSi2N4(MoN)4monolayers have much higher Young’s modulus than Mo N, which is atributed to the strong Si-N bonds on the surface.Importantly, different from the semiconducting nature of the Mo Si2N4monolayer, the MoSi2N4(MoN)4monolayer is identified as a superconductor with a transition temperature of 9.02 K. The discovery of MoSi2N4(MoN)4nstructures not only expands the family of 2d materials but also brings a new degree of freedom to tailor the structure of 2d vd W materials, which may lead to unexpected novel properties and applications.

关键词： MoSi2N4 2d layered materials homologous compounds idPC-STEM superconduct

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Recent advances in two-dimensional layered and non-layered materials hybrid heterostructures

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Chinese Physics B 2022年第10期31卷 231-246页

作者：马海鑫邢艳辉崔博垚韩军王冰辉曾中明 Key Laboratory of Opto-electronics Technology Ministry of EducationCollege of MicroelectronicsBeijing University of TechnologyBeijing 100124China Key Laboratory of Nanodevices and Applications Suzhou Institute of Nano-tech and Nano-bionicsChinese Academy of SciencesSuzhou 215123China Nanchang Nano-devices and Technologies division Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesNanchang 330200China

With the development of Moore's law, the future trend of devices will inevitably be shrinking and integration to further achieve size reduction. The emergence of new two-dimensional non-layered materials(2dNLMs) not only enriches the 2d material family to meet future development, but also stimulates the global enthusiasm for basic research and application technologies in the 2d field. Van der Waals(vd W) heterostructures, in which two-dimensional layered materials(2dLMs)are physically stacked layer by layer, can also occur between 2dLMs and 2dNLMs hybrid heterostructures, providing an alternative platform for nanoelectronics and optoelectronic applications. Here, we outline the recent developments of2dLMs/2dNLMs hybrid heterostructures, with particular emphasis on major advances in synthetic methods and applications. And the categories and crystal structures of 2dLMs and 2dNLMs are also shown. We highlight some promising applications of the heterostructures in electronics, optoelectronics, and catalysis. Finally, we provide conclusions and future prospects in the 2d materials field.

关键词： 2d layered materials 2d non-layered materials van der Waals heterostructure applications

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原位集成光浮栅的多层SnS_(2)/少层MoS_(2)异质结用于高性能光电探测器与光学成像

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Science China materials 2023年第5期66卷 1879-1890页

作者：易华鑫杨海林马楚荣马宇航叶俏珏陆健婷王婉郑照强邓泽祥邹逸超姚健东杨国伟 State Key Laboratory of Optoelectronic materials and Technologies Nanotechnology Research CenterSchool of Materials Science&EngineeringSun Yatsen UniversityGuangzhou 510275China Guangzhou Key Laboratory of Flexible Electronic materials and Wearable devices Sun Yat-sen UniversityGuangzhou 510275China Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications Institute of Photonics TechnologyJinan UniversityGuangzhou 511443China School of materials and Energy Guangdong University of TechnologyGuangzhou 510006China School of Science Guilin University of Aerospace TechnologyGuilin 541004China

自单层MoS_(2)光电晶体管问世以来,二维层状材料一直被认为是实现下一代新型光电器件与系统的最引人瞩目的候选材料之一.然而,大多数报道的二维层状材料光电探测器都存在一定的缺点,如响应率低、暗电流大、比探测率低、开关比低、响应... 详细信息

自单层MoS_(2)光电晶体管问世以来,二维层状材料一直被认为是实现下一代新型光电器件与系统的最引人瞩目的候选材料之一.然而,大多数报道的二维层状材料光电探测器都存在一定的缺点,如响应率低、暗电流大、比探测率低、开关比低、响应速率慢等.在本研究中,通过堆叠由大气压化学气相沉积技术所生长的MoS_(2)和SnS_(2)纳米片,制备出了多层SnS_(2)/少层MoS_(2)范德华异质结.相应的SnS_(2)/MoS_(2)异质结光电探测器展示出了具有竞争力的综合性能:大开关比(171)、高响应率(28.3 A W^(-1)),以及出色的比探测率(1.2×10^(13)Jones).此外,该器件还实现了响应/恢复时间低至1.38 ms/600μs的超快响应速率.其优异的性能与SnS_(2)/MoS_(2)异质结的Ⅱ型能带排列以及原位形成的无缝光浮栅的协同作用相关,这有助于分离光激发的电子-空穴对,并延长非平衡载流子的寿命.得益于出色的光敏性,该SnS_(2)/MoS_(2)器件实现了概念验证的光学成像应用.总体而言,本研究为实现具有优异综合性能的先进光电探测器提供了独特视角.

关键词： in-situ floating photogate 2d layered materials van der Waals heterojunctions photodetectors optical imaging

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Extensive study of optical contrast between bulk and nanoscale transition metal dichalcogenide semiconductors

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Journal of Semiconductors 2021年第8期42卷 45-54页

作者： Ankush Parmar Jashangeet Kaur Manish dev Sharma Navdeep Goyal Centre of Applied Sciences Department of PhysicsSector-14Panjab UniversityChandigarh 160014India department of Physics G.G.D.S.D CollegeSector-32Chandigarh 160030India

A remarkable refinement in the optical behavior of two-dimensional transition metal dichalcogenides(TMds)has been brought to light when cleaved from their respective bulks.These atomically thin direct bandgap semiconductors are highly responsive to optical energy which proposes the route for futuristic photonic devices.In this manuscript,we have substantially focused on the optical study of MoS_(2)and WS_(2)nanosheets and comparative analysis with their bulk counterparts.The synthesis of nanosheets has been accomplished with liquid exfoliation followed by fabrication of thin films with drop-casting technique.X-ray diffraction and field emission scanning electron microscopy affirmed the morphology,whereas,UV-visible spectroscopy served as the primary tool for optical analysis.It was observed that several parameters,like optical conductivity,optical band-gap energy etc.have enhanced statistics in the case of exfoliated nanosheets as compared to their respective bulks.Some researchers have touched upon this analysis for MoS_(2),but it is completely novel for WS_(2).We expect our work to clearly distinguish between the optical behaviors of nanoscale and bulk TMds so as to intensify and strengthen the research related to 2d-layered materials for optoelectronic and photovoltaic applications.

关键词： transition metal dichalcogenides 2d layered materials optical properties liquid phase exfoliation thin films dropcasting

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Research Advances of Typical Two dimensional layered Thermoelectric materials

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Research and Application of materials Science 2020年第2期2卷 1-11页

作者： Haihua HUANG Xiaofeng FAN Key Laboratory of Automobile materials(Jilin University) Ministry of Educationand College of Materials Science and EngineeringJilin UniversityChangchun130012China

Thermoelectric technologies have caught our intense attention due to their ability of heat conversion into electricity.The considerable efforts have been taken to develop and enhance thermoelectric properties of materials over the past several decades.Recently,twodimensional layered materials are making the promise for potential applications of thermoelectric devices because of the excellent physical and structural properties.Here,a comprehensive coverage about recent progresses in thermoelectric properties of typical two dimensional(2d)layered materials,including the theoretical and experimental results,is provided.Moreover,the potential applications of 2d thermoelectric materials are also involved.These results indicate that the development of 2d thermoelectric materials take a key role in the flexible electronic devices with thermoelectric technologies.

关键词： thermoelectric properties transport properties 2d layered materials figure of merit,first-principle calculations

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