Two-dimensional superconducting MoSi2N4(MoN)4n homologous compounds
作者机构：Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences School of Materials Science and Engineering University of Science and Technology of China Shenzhen Institute of Advanced Technology Chinese Academy of Sciences
出 版 物：《National Science Review》 (国家科学评论(英文版))
年 卷 期：2023年第10卷第4期
页 面：142-149页
核心收录：
学科分类：080705[工学-制冷及低温工程] 081702[工学-化学工艺] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0817[工学-化学工程与技术] 0807[工学-动力工程及工程热物理] 0703[理学-化学] 0702[理学-物理学]
基 金：supported by the National Natural Science Foundation of China (52188101, 51802315, 51325205, 52102355and 51725103) the Key Research Program of Frontier Sciences of the Chinese Academy of Sciences (CAS)(ZDBSLY-JSC027) the Strategic Priority Research Program of the CAS (XDB30000000) the Youth Innovation Promotion Association CAS (2021000185) the Shenyang National Laboratory for Materials Science (2019000191 and L2019R22) the Guangdong Basic and Applied Basic Research Foundation(2020B0301030002)
主 题：MoSi2N4 2D layered materials homologous compounds iDPC-STEM superconduct
摘 要：The number and stacking order of layers are two important degrees of freedom that can modulate the properties of 2D van der Waals(vdW) materials. However, the layers’ structures are essentially limited to the known layered 3D vdW materials. Recently, a new 2D vdW material, MoSi2N4, without known 3D counterparts, was synthesized by passivating the surface dangling bonds of non-layered 2D molybdenum nitride with elemental silicon, whose monolayer can be viewed as a monolayer MoN(-N-Mo-N-)sandwiched between two Si-N layers. This unique sandwich structure endows the MoSi2N4monolayer with many fascinating properties and intriguing applications, and the surface-passivating growth method creates the possibility of tuning the layer’s structure of 2D vdW materials. Here we synthesized a series of MoSi2N4(MoN)4nstructures confined in the matrix of multilayer MoSi2N4. These super-thick monolayers are the homologous compounds of MoSi2N4, which can be viewed as multilayer MoN(Mo4n+1N4n+2)sandwiched between two Si-N layers. First-principles calculations show that MoSi2N4(MoN)4monolayers have much higher Young’s modulus than Mo N, which is atributed to the strong Si-N bonds on the ***, different from the semiconducting nature of the Mo Si2N4monolayer, the MoSi2N4(MoN)4monolayer is identified as a superconductor with a transition temperature of 9.02 K. The discovery of MoSi2N4(MoN)4nstructures not only expands the family of 2D materials but also brings a new degree of freedom to tailor the structure of 2D vd W materials, which may lead to unexpected novel properties and applications.
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