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Recent Advances in Strain-Induced Piezoelectric and Piezoresistive Effect-Engineered 2d semiconductors for Adaptive Electronics and Optoelectronics

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Nano-Micro Letters 2020年第8期12卷 236-279页

作者： Feng Li Tao Shen Cong Wang Yupeng Zhang Junjie Qi Han Zhang Institute of Microscale Optoelectronics International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of EducationCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen 518060People’s Republic of China School of Materials Science and Engineering University of Science and Technology BeijingBeijing 100083People’s Republic of China

The development of two-dimensional(2d)semiconductors has attracted widespread attentions in the scientific community and industry due to their ultra-thin thickness,unique structure,excellent optoelectronic properties and novel physics.The excellent flexibility and outstanding mechanical strength of 2d semiconductors provide opportunities for fabricated strain-sensitive devices and utilized strain tuning their electronic and optic–electric performance.The strain-engineered one-dimensional materials have been well investigated,while there is a long way to go for 2d semiconductors.In this review,starting with the fundamental theories of piezoelectric and piezoresistive effect resulted by strain,following we reviewed the recent simulation works of strain engineering in novel 2d semiconductors,such as Janus 2d and 2d-Xene structures.Moreover,recent advances in experimental observation of strain tuning PL spectra and transport behavior of 2d semiconductors are summarized.Furthermore,the applications of strain-engineered 2d semiconductors in sensors,photodetectors and nanogenerators are also highlighted.At last,we in-depth discussed future research directions of strain-engineered 2d semiconductor and related electronics and optoelectronics device applications.

关键词： 2d semiconductors Strain Piezoelectric effect Piezoresistive effect Electronic and optoelectronics

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Bandgap engineering of high mobility two-dimensional semiconductors toward optoelectronic devices

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Journal of Materiomics 2023年第3期9卷 527-540页

作者： Qiaoyan Hao Peng Li Jidong Liu Jiarui Huang Wenjing Zhang International Collaborative Laboratory of 2d Materials for Optoelectronics Science and Technology of Ministry of Education Institute of Microscale OptoelectronicsShenzhen UniversityShenzhen518060China Shenzhen Institute of Advanced Electronic Materials Shenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhen518103China

Over the last few years,great advances have been achieved in exploration of high-mobility two-dimensional(2d)semiconductors such as metal chalcogenide InSe and noble-transition-metal dichal-cogenide PdSe_(2).These materials are competitive candidates for constructing next-generation optoelec-tronic devices owing to their unique crystalline and electronic structures.Moreover,the optical and electronic properties of 2d materials can be efficiently modified via precisely engineering their band structures,which is critical for widening specific applications ranging from high-performance opto-electronics to catalysis and energy harvesting.In this review,we focus on the progress in bandgaps engineering of newly emerging high-mobility 2d semiconductors and their applications in optoelec-tronic devices,incorporating our recent study in the InSe and PdSe_(2)systems.First of all,we discuss the structure-property relationship of typical high-mobility 2d semiconductors(InSe and PdSe 2).Next,we analyze several viable strategies for bandgap engineering,including thickness,strain or pressure,alloying,heterostructure,surface modification,intercalation,and so on.Furthermore,we summarize the optoelectronic devices fabricated with such high-mobility 2d semiconductors.The conclusion and outlook in this topic are finally presented.This review aims to provide valuable insights in bandgap engineering of newly emerging 2d semiconductors and explore their potential in future optoelectronic applications.

关键词： High mobility 2d semiconductors Bandgap engineering Alloying Heterostructure

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Band gap engineering of atomically thin two-dimensional semiconductors

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Chinese Physics B 2017年第3期26卷 48-58页

作者：葛翠环李洪来朱小莉潘安练 Key Laboratory for Micro-Nano Physics and Technology of Hunan Province Key Laboratory for Micro/Nano Optoeleetronic Devices of Ministry of Education State Key Laboratory of Chemo/Biosensing and Chemometrics School of Physics and Electronics Hunan University Changsha 410082 China

Atomically thin two-dimensional （2d） layered materials have potential applications in nanoelectronics, nanophoton- ics, and integrated optoelectronics. Band gap engineering of these 2d semiconductors is critical for their broad applications in high-performance integrated devices, such as broad-band photodetectors, multi-color light emitting diodes （LEds）, and high-efficiency photovoltaic devices. In this review, we will summarize the recent progress on the controlled growth of composition modulated atomically thin 2d semiconductor alloys with band gaps tuned in a wide range, as well as their induced applications in broadly tunable optoelectronic components. The band gap engineered 2d semiconductors could open up an exciting opportunity for probing their fundamental physical properties in 2d systems and may find diverse applications in functional electronic/optoelectronic devices.

关键词： 2d semiconductors band gap engineering alloys atomically thin

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Iodine-assisted ultrafast growth of high-quality monolayer MoS_(2) with sulfur-terminated edges

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National Science Open 2023年第4期2卷 43-54页

作者： Qinke Wu Jialiang Zhang Lei Tang Usman Khan Huiyu Nong Shilong Zhao Yujie Sun Rongxu Zheng Rongjie Zhang Jingwei Wang Junyang Tan Qiangmin Yu Liqiong He Shisheng Li Xiaolong Zou Hui-Ming Cheng Bilu Liu Shenzhen Geim Graphene Center Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate SchoolTsinghua UniversityShenzhen 518055China Institute of Functional Porous Materials School of Materials Science and EngineeringZhejiang Sci-Tech UniversityHangzhou 310018China International Center for Materials Nanoarchitectonics National Institute for Materials ScienceTsukuba 305-0044Japan Faculty of Materials Science and Engineering/Institute of Technology for Carbon Neutrality Shenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhen 518055China Shenyang National Laboratory for Materials Sciences Institute of Metal ResearchChinese Academy of SciencesShenyang 110016China Advanced Technology Institute University of SurreyGuildfordSurrey GU27XHUK

Two-dimensional(2d)semiconductors have attracted great attention to extend Moore’s law,which motivates the quest for fast growth of high-quality materials.However,taking MoS_(2) as an example,current methods yield 2d MoS_(2) with a low growth rate and poor quality with vacancy concentrations three to five orders of magnitude higher than silicon and other commercial semiconductors.Here,we develop a strategy of using an intermediate product of iodine as a transport agent to carry metal precursors efficiently for ultrafast growth of high-quality MoS_(2).The grown MoS_(2) has the lowest density of sulfur vacancies(~1.41×10^(12) cm^(−2))reported so far and excellent electrical properties with high on/off current ratios of 108 and carrier mobility of 175 cm^(2) V^(−1) s^(−1).Theoretical calculations show that by incorporating iodine,the nucleation barrier of MoS_(2) growth with sulfur-terminated edges reduces dramatically.The sufficient supply of precursor and low nucleation energy together boost the ultrafast growth of sub-millimeter MoS_(2) domains within seconds.This work provides an effective method for the ultrafast growth of 2d semiconductors with high quality,which will promote their applications.

关键词： 2d semiconductors molybdenum disulfides ultrafast growth defect density sulfur vacancy iodine-assisted sulfur-terminated edge

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Phonon scattering and exciton localization: molding exciton flux in two dimensional disorder energy landscape

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eLight 2021年第1期1卷 57-68页

作者： Pengfei Qi Yang Luo Beibei Shi Wei Li donglin Liu Liheng Zheng Zhixin Liu Yanglong Hou Zheyu Fang School of Physics State Key Laboratory for Mesoscopic PhysicsAcademy for Advanced Interdisciplinary StudiesCollaborative Innovation Center of Quantum MatterNano-Optoelectronics Frontier Center of Ministry of EducationPeking UniversityBeijing 100871China. Institute of Modern Optics Tianjin Key Laboratory of Micro-Scale Optical Information Science and TechnologyNankai UniversityTianjin 300350China. Beijing Key Laboratory for Magnetoelectric Materials and devices Beijing Innovation Centre for Engineering Science and Advanced TechnologyDepartment of Materials Science and EngineeringCollege of EngineeringPeking UniversityBeijing 100871China.

Two dimensional excitonic devices are of great potential to overcome the dilemma of response time and integration in current generation of electron or/and photon based systems.The ultrashort diffusion length of exciton arising from ultrafast relaxation and low carrier mobility greatly discounts the performance of excitonic devices.Phonon scattering and exciton localization are crucial to understand the modulation of exciton flux in two dimensional disorder energy landscape,which still remain elusive.Here,we report an optimized scheme for exciton diffusion and relaxation dominated by phonon scattering and disorder potentials in WSe2 monolayers.The effective diffusion coefficient is enhanced by>200%at 280 K.The excitons tend to be localized by disorder potentials accompanied by the steadily weakening of phonon scattering when temperature drops to 260 K,and the onset of exciton localization brings forward as decreasing temperature.These findings identify that phonon scattering and disorder potentials are of great importance for long-range exciton diffusion and thermal management in exciton based systems,and lay a firm foundation for the development of functional excitonic devices.

关键词： Exciton diffusion Exciton relaxation 2d semiconductors Phonon scattering disorder potentials

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