Bandgap engineering of high mobility two-dimensional semiconductors toward optoelectronic devices
作者机构：International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of EducationInstitute of Microscale OptoelectronicsShenzhen UniversityShenzhen518060China Shenzhen Institute of Advanced Electronic MaterialsShenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhen518103China
出 版 物：《Journal of Materiomics》 (无机材料学学报（英文）)
年 卷 期：2023年第9卷第3期
页 面：527-540页
核心收录：
学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学]
基 金：funded by the Science,Technology and Innovation Commission of Shenzhen Municipality(Grant no.JCYJ20200109105422876) the Educational Commission of Guangdong Province project(Key program,Grant no.2020ZDZX3041) and the Shenzhen Peacock Plan(Grant no.KQTD2016053112042971).
主 题：High mobility 2D semiconductors Bandgap engineering Alloying Heterostructure
摘 要：Over the last few years,great advances have been achieved in exploration of high-mobility two-dimensional(2D)semiconductors such as metal chalcogenide InSe and noble-transition-metal dichal-cogenide PdSe_(2).These materials are competitive candidates for constructing next-generation optoelec-tronic devices owing to their unique crystalline and electronic structures.Moreover,the optical and electronic properties of 2D materials can be efficiently modified via precisely engineering their band structures,which is critical for widening specific applications ranging from high-performance opto-electronics to catalysis and energy harvesting.In this review,we focus on the progress in bandgaps engineering of newly emerging high-mobility 2D semiconductors and their applications in optoelec-tronic devices,incorporating our recent study in the InSe and PdSe_(2)systems.First of all,we discuss the structure-property relationship of typical high-mobility 2D semiconductors(InSe and PdSe 2).Next,we analyze several viable strategies for bandgap engineering,including thickness,strain or pressure,alloying,heterostructure,surface modification,intercalation,and so on.Furthermore,we summarize the optoelectronic devices fabricated with such high-mobility 2D semiconductors.The conclusion and outlook in this topic are finally presented.This review aims to provide valuable insights in bandgap engineering of newly emerging 2D semiconductors and explore their potential in future optoelectronic applications.
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