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New strategy for designing orangish-redemitting phosphor via oxygen-vacancyinduced electronic localization

Light(Science & Applications) 2019年第1期8卷 1012-1020页

作者： Yi Wei Gongcheng Xing Kang Liu Guogang Li Peipei Dang Sisi Liang Min Liu Ziyong Cheng Dayong Jin Jun Lin Engineering Research Center of Nano-Geomaterials of Ministry of Education Faculty of Materials Science and ChemistryChina University of Geosciences388 Lumo Road430074 WuhanPeople’s Republic of China State Key Laboratory of Rare Earth Resource Utilization Changchun Institute of Applied ChemistryChinese Academy of Sciences130022 ChangchunPeople’s Republic of China Hunan Key Laboratory for Super-microstructure and Ultrafast Process School of Physics and ElectronicsCentral South University410083 ChangshaHunanPeople’s Republic of China State Key Laboratory of Powder Metallurgy Central South University932 South Lushan Road410083 ChangshaHunanPeople’s Republic of China Institute for Biomedical Materials and Devices(IBMD) Faculty of ScienceUniversity of Technology SydneySydneyNSWAustralia School of Applied Physics and Materials Wuyi University529020 JiangmenGuangdongPeople’s Republic of China

Phosphor-converted white-light-emitting diodes(pc-WLED)have been extensively employed as solid-state lighting sources,which have a very important role in people’s daily ***,due to the scarcity of the red component,it is difficult to realize warm white light ***,red-emitting phosphors are urgently required for improving the illumination *** this work,we develop a novel orangish-red La_(4)GeO_(8):Bi^(3+) phosphor,the emission peak of which is located at 600 nm under near-ultraviolet(n-UV)light *** full width at half maximum(fwhm)is 103 nm,the internal quantum efficiency(IQE)exceeds 88%,and the external quantum efficiency(EQE)is 69%.According to Rietveld refinement analysis and density functional theory(DFT)calculations,Bi^(3+) ions randomly occupy all La sites in orthorhombic La_(4)GeO_(8).Importantly,the oxygen-vacancy-induced electronic localization around the Bi3+ions is the main reason for the highly efficient orangish-red *** results provide a new perspective and insight from the local electron structure for designing inorganic phosphor materials that realize the unique luminescence performance of Bi^(3+) ions.

关键词： designing vacancy electronic

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本征可拉伸有机光电器件和阵列的研究进展与展望（英文）

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Science Bulletin 2023年第10期 975-980页

作者：边洋爽刘云圻郭云龙 Beijing National Laboratory for Molecular Sciences Key Laboratory of Organic Solids Institute of Chemistry Chinese Academy of Sciences School of Chemical Sciences University of Chinese Academy of Sciences

With the upsurge of stretchable electronics, organic optoelectronic devices are enjoying renewed prominence from both academia and industry due to their high flexibility, biocompatibility,lightweight and low-cost mass production [1–4]. Current appeal for wearable and implantable smart systems has facilitated the rapid advancement of intrinsically stretchable organic optoelectronic devices. Such devices are capable of seamless integration,high-resolution sensing and excellent mechanical stability, thereby exhibiting outstanding prospects for precise detection in remote,real-time and mobile situations [5]. Furthermore, intrinsically stretchable organic optoelectronic devices provide enticing opportunities towards achieving human-oriented applications including medical monitoring and diagnosis, intelligent biomimetic robots,prosthetic auxiliary equipment and human-electronic interfaces[1–3,5,6].

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Multimodal Locomotion and Cargo Transportation of Magnetically Actuated Quadruped Soft Microrobots

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Cyborg and Bionic Systems 2022年第1期2022卷 12-21页

作者： Chenyang Huang Zhengyu Lai Xinyu Wu Tiantian Xu Guangdong Provincial Key Lab of Robotics and Intelligent System Shenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhen 518055China SIAT Branch Shenzhen Institute of Artificial Intelligence and Robotics for SocietyShenzhen 518055China University of Chinese Academy of Sciences Beijing 100049China

Untethered microrobots have attracted extensive attention due to their potential for biomedical applications and micromanipulation at the small *** microrobots are of great research importance because of their highly deformable ability to achieve not only multiple locomotion mechanisms but also minimal invasion to the ***,the existing microrobots are still limited in their ability to locomote and cross obstacles in unstructured environments compared to conventional legged *** provides much inspiration for developing miniature ***,we propose a bionic quadruped soft thin-film microrobot with a nonmagnetic soft body and 4 magnetic flexible *** quadruped soft microrobot can achieve multiple controllable locomotion modes in the external magnetic *** experiment demonstrated the robot’s excellent obstacle-crossing ability by walking on the surface with steps and moving in the bottom of a stomach model with *** particular,by controlling the conical angle of the external conical magnetic field,microbeads gripping,transportation,and release of the microrobot were *** the future,the quadruped microrobot with excellent obstacle-crossing and gripping capabilities will be relevant for biomedical applications and micromanipulation.

关键词： robot obstacle steps

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High-performance enhancement-mode GaN-based p-FETs fabricated with O_(3)-Al_(2)O_(3)/HfO_(2)-stacked gate dielectric

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半导体学报:英文版 2023年第10期44卷 99-103页

作者： Hao Jin Sen Huang Qimeng Jiang Yingjie Wang Jie Fan Haibo Yin Xinhua Wang Ke Wei Jianxun Liu Yaozong Zhong Qian Sun Xinyu Liu Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of SciencesSuzhou 215123China

In this letter,an enhancement-mode(E-mode)GaN p-channel field-effect transistor(p-FET)with a high current den-sity of−4.9 mA/mm based on a O_(3)-Al_(2)O_(3)/HfO_(2)(5/15 nm)stacked gate dielectric was demonstrated on a p++-GaN/p-GaN/AlN/AlGaN/AlN/GaN/Si *** to the p++-GaN capping layer,a good linear ohmic I−V characteristic fea-turing a low-contact resistivity(ρc)of 1.34×10^(−4)Ω·cm^(2) was *** gate leakage associated with the HfO_(2)high-k gate dielectric was effectively blocked by the 5-nm O_(3)-Al_(2)O_(3)insertion layer grown by atomic layer deposition,contributing to a high ION/IOFF ratio of 6×10^(6)and a remarkably reduced subthreshold swing(SS)in the fabricated *** proposed structure is compelling for energy-efficient GaN complementary logic(CL)circuits.

关键词： GaN p-FETs enhancement-mode HfO_(2) subthreshold swing

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New Patterning Method for Fabricating Micro/Nano Scale Devices

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Bulletin of the Chinese Academy of Sciences 2016年第1期30卷 63-63页

Both semiconductor layers and metal electrodes are necessary components of micro/nano scale devices such as sensors,solar cells,and field-effect *** ability to rapidly design and cost-effectively pattern micro metal electrodes along with semiconducting materials is vital for fabricating novel devices in micro/nano scale,and has attracted considerable attention

关键词：纳米尺度器件制备太阳能电池组件场效应晶体管金属电极半导体材料半导体层

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Cd掺杂Zn0阵列纳米梳子

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零陵学院学报 2004年第6期25卷 53-57页

作者：周少敏中国科学院北京物理和化学技术研究所有机电子发光和纳米器件研究室 5100信箱北京100101

作者采用Zn+Cd粉,制得了大量阵列Cd掺杂ZnO纳米梳子。这些纳米梳子通过X-射线衍射仪(XRD)、X-射线光电子能谱仪(XPS)、透射电子显微镜(TEM)、X-射线能量损失谱仪(EDS)、选区电子衍射仪(SAED)及高分辨透射电子显微镜(HRTEM)来分析其形貌... 详细信息

作者采用Zn+Cd粉,制得了大量阵列Cd掺杂ZnO纳米梳子。这些纳米梳子通过X-射线衍射仪(XRD)、X-射线光电子能谱仪(XPS)、透射电子显微镜(TEM)、X-射线能量损失谱仪(EDS)、选区电子衍射仪(SAED)及高分辨透射电子显微镜(HRTEM)来分析其形貌和宏、微观结构。结果显示这些纳米梳子的臂直径为15-50 nm、臂长为400 nm,它们都有单晶的结构及相应的生长机制为传统的气固生长机制。

关键词： II-VI族半导体 Cd掺杂纳米结构 ZnO阵列

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Multifunctional neurosynaptic devices for human perception systems

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Journal of Semiconductors 2022年第5期43卷 45-57页

作者： Wei Wen Yunlong Guo Yunqi Liu Institute of Chemistry Chinese Academy of SciencesBeijing 100190China University of Chinese Academy of Sciences Beijing 100049China

The traditional Von Neumann architecture for processing information is difficult to meet the needs of the big data era, while low-power, small-sized neurosynaptic devices can operate and store information, so that they have received extensive attention. Due to the development of artificial intelligence and robotics, neurosynaptic devices have been given high expectations and requirements. The trend of functionalization, intelligence, and integration of computing and storage is obvious. In this review, the basic principles and types of neurosynaptic devices are summarized, the achievements of neurosynaptic devices for human perception systems are discussed and a prospect on the development trend is also given.

关键词： neurosynaptic devices memristors transistors human perception system

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