High-performance enhancement-mode GaN-based p-FETs fabricated with O_(3)-Al_(2)O_(3)/HfO_(2)-stacked gate dielectric

作     者：Hao Jin Sen Huang Qimeng Jiang Yingjie Wang Jie Fan Haibo Yin Xinhua Wang Ke Wei Jianxun Liu Yaozong Zhong Qian Sun Xinyu Liu Hao Jin;Sen Huang;Qimeng Jiang;Yingjie Wang;Jie Fan;Haibo Yin;Xinhua Wang;Ke Wei;Jianxun Liu;Yaozong Zhong;Qian Sun;Xinyu Liu

作者机构：Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of SciencesBeijing 100049China Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China 

出 版 物：《半导体学报:英文版》 (Journal of Semiconductors)

年 卷 期：2023年第44卷第10期

页      面：99-103页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：This work was supported in part by the National Key Research and Development Program of China under Grant 2022YFB3604400 in part by the Youth Innovation Promotion Association of Chinese Academy Sciences(CAS) in part by CAS-Croucher Funding Scheme under Grant CAS22801 in part by National Natural Science Foundation of China under Grant 62074161,Grant 62004213,and Grant U20A20208 in part by the Beijing Municipal Science and Technology Commission project under Grant Z201100008420009 and Grant Z211100007921018 in part by the University of CAS in part by IMECAS-HKUST-Joint Laboratory of Microelectronics 

主　　题：GaN p-FETs enhancement-mode HfO_(2) subthreshold swing 

摘      要：In this letter,an enhancement-mode(E-mode)GaN p-channel field-effect transistor(p-FET)with a high current den-sity of−4.9 mA/mm based on a O_(3)-Al_(2)O_(3)/HfO_(2)(5/15 nm)stacked gate dielectric was demonstrated on a p++-GaN/p-GaN/AlN/AlGaN/AlN/GaN/Si *** to the p++-GaN capping layer,a good linear ohmic I−V characteristic fea-turing a low-contact resistivity(ρc)of 1.34×10^(−4)Ω·cm^(2) was *** gate leakage associated with the HfO_(2)high-k gate dielectric was effectively blocked by the 5-nm O_(3)-Al_(2)O_(3)insertion layer grown by atomic layer deposition,contributing to a high ION/IOFF ratio of 6×10^(6)and a remarkably reduced subthreshold swing(SS)in the fabricated *** proposed structure is compelling for energy-efficient GaN complementary logic(CL)circuits.