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Crystalline silicon surface passivation investigated by thermal atomic-layer-deposited aluminum oxide

Chinese Physics B 2017年第9期26卷 478-482页

作者：侯彩霞郑新和贾锐陶科刘三姐姜帅张鹏飞孙恒超李永涛 Department of Physics University of Science and Technology BeijingBeijing 100083China Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China

Atomic-layer-deposited（ALD） aluminum oxide（Al2O3） has demonstrated an excellent surface passivation for crystalline silicon（c-Si） surfaces, as well as for highly boron-doped c-Si surfaces. In this paper, water-based thermal atomic layer deposition of Al2O3 films are fabricated for c-Si surface passivation. The influence of deposition conditions on the passivation quality is investigated. The results show that the excellent passivation on n-type c-Si can be achieved at a low thermal budget of 250℃ given a gas pressure of 0.15 Torr. The thickness-dependence of surface passivation indicates that the effective minority carrier lifetime increases drastically when the thickness of Al2O3 is larger than 10 nm. The influence of thermal post annealing treatments is also studied. Comparable carrier lifetime is achieved when Al2O3 sample is annealed for 15 min in forming gas in a temperature range from 400℃ to 450℃. In addition, the passivation quality can be further improved when a thin PECVD-SiNx cap layer is prepared on Al2O3, and an effective minority carrier lifetime of2.8 ms and implied Voc of 721 mV are obtained. In addition, several novel methods are proposed to restrain blistering.

关键词： atomic layer deposition Al_2O_3 surface passivation effective minority carrier lifetime

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PEALD-deposited crystalline GaN films on Si(100) substrates with sharp interfaces

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Chinese Physics B 2019年第2期28卷 376-382页

作者： San-Jie Liu Ying-Feng He Hui-Yun Wei Peng Qiu Yi-Meng Song Yun-Lai An Abdul Rehman Ming-Zeng Peng Xin-He Zheng School of Mathematics and Physics Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface ScienceUniversity of Science and Technology Beijing(USTB)

Polycrystalline gallium nitride(GaN) thin films were deposited on Si(100) substrates via plasma-enhanced atomic layer deposition(PEALD) under optimal deposition parameters. In this work, we focus on the research of the GaN/Si(100)interfacial properties. The x-ray reflectivity measurements show the clearly-resolved fringes for all the as-grown GaN films, which reveals a perfectly smooth interface between the GaN film and Si(100), and this feature of sharp interface is further confirmed by high resolution transmission electron microscopy(HRTEM). However, an amorphous interfacial layer(~ 2 nm) can be observed from the HRTEM images, and is determined to be mixture of Ga_xO_y and GaN by xray photoelectron spectroscopy. To investigate the effect of this interlayer on the GaN growth, an AlN buffer layer was employed for GaN deposition. No interlayer is observed between GaN and AlN, and GaN shows better crystallization and lower oxygen impurity during the initial growth stage than the GaN with an interlayer.

关键词： gallium nitride PEALD sharp interface x-ray reflectivity high resolution transmission electron microscopy

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