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Anomalous temperature dependent photoluminescence properties of CdS_xSe_(1-x) quantum dots

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Science China(Physics,Mechanics & Astronomy) 2010年第10期53卷 1842-1846页

作者： YU DongQi CHEN Xi zhang heqiu HU LiZhong SUN JingChang QIAO ShuangShuang SUN KaiTong ZHU JinXia School of Physics and Electronic Technology Liaoning Normal UniversityDalian 116029China School of Physics and Optoelectronic Technology Dalian University of TechnologyDalian 116024China

CdSxSe1-x quantum dots were fabricated by a simple spin-coating heat volatilization method on InP *** dependent photoluminescence of CdSxSe1-x quantum dots was carried out in a range of 10-300 *** integrated photoluminescence intensity revealed an anomalous behavior with increasing temperature in the range of 180-200 *** band gap energy showed a redshift of 61.34 meV when the temperature increased from 10 to 300 *** component ratio of S to Se in the CdSxSe1-x quantum dots was valued by both the X-ray diffraction data and photoluminescence peak energy at room temperature according to Vegard ***,the parameters of the Varshni relation for CdS0.9Se0.1 materials were also obtained using photoluminescence peak energy as a function of temperature and the best-fit curve:α=(3.5 ± 0.1)10-4 eV/K,and β=210 ± 10 K (close to the Debye temperature θD of the material).

关键词： CdSxSe1-x quantum dots temperature dependent photoluminescence

AlGaN/GaN HEMT器件高温栅偏置应力后栅极泄漏电流机制分析

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大连理工大学学报 2024年第1期64卷 90-95页

作者：陈欢欢张贺秋邢鹤夏晓川张振中蔡涛叶宇帆郭文平席庆南黄慧诗梁晓华梁红伟大连理工大学集成电路学院辽宁大连116024 元旭半导体科技股份有限公司山东潍坊261000 江苏新广联科技股份有限公司江苏无锡214192 中国科学院高能物理研究所北京100049

AlGaN/GaN高电子迁移率晶体管(HEMT)的栅特性会受到温度应力和电应力的影响.在高温栅偏置(HTGB)应力下,器件的栅特性会发生退化,如栅极泄漏电流增大.为了研究退化机理,分析了AlGaN/GaN HEMT在栅电压为-2 V时,250℃高温应力作用后的栅极... 详细信息

AlGaN/GaN高电子迁移率晶体管(HEMT)的栅特性会受到温度应力和电应力的影响.在高温栅偏置(HTGB)应力下,器件的栅特性会发生退化,如栅极泄漏电流增大.为了研究退化机理,分析了AlGaN/GaN HEMT在栅电压为-2 V时,250℃高温应力作用后的栅极泄漏电流机制.随着HTGB时间的增加,栅极泄漏电流持续增大,受到应力器件在室温下静置后栅极泄漏电流密度恢复约20%.结果表明,在正向偏置范围内,栅极泄漏电流是由热电子发射(TE)引起的.在反向偏置范围内,普尔-弗伦克尔(PF)发射在小电压范围内占主导地位.阈值电压附近的范围由势垒层中的陷阱辅助隧穿(TAT)引起;在大电压范围内,福勒-诺德海姆(FN)隧穿导致栅极发生泄漏.

关键词： AlGaN/GaN HEMT 高温栅偏置应力栅极泄漏电流机制

Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga_2O_3

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Chinese Physics B 2019年第4期28卷 375-380页

作者： Chao Yang Hongwei Liang Zhenzhong zhang Xiaochuan Xia heqiu zhang Rensheng Shen Yingmin Luo Guotong Du School of Microelectronics Dalian University of Technology State Key Laboratory of Luminescence and Applications Changchun Institute of Optics Fine Mechanics and PhysicsChinese Academy of Sciences

A solar-blind photodetector is fabricated on single crystal Ga_2O_3 based on vertical structure Schottky barrier diode. A Cu Schottky contact electrode is prepared in a honeycomb porous structure to increase the ultraviolet(UV) *** quantum efficiency is about 400% at 42 V. The Ga_2O_3 photodetector shows a sharp cutoff wavelength at 259 nm with high solar-blind/visible(= 3213) and solar-blind/UV(= 834) rejection ratio. Time-resolved photoresponse of the photodetector is investigated at 253-nm illumination from room temperature(RT) to 85.8℃. The photodetector maintains a high reversibility and response speed, even at high temperatures.

关键词： Ga2O3 single crystal solar-blind photodetector high temperature

Identification and characterization of mammaglobin-A epitope in heterogenous breast cancers for enhancing tumor-targeting therapy

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Signal Transduction and Targeted Therapy 2020年第1期5卷 1778-1788页

作者： Zhiqiang Liu Xiqin Yang Cuimi Duan Jiangxue Li Rongsheng Tong Yuting Fan Jiannan Feng Ruiyuan Cao Wu Zhong Xiaoyan Feng heqiu zhang Lulu Cai Beijing Institute of Basic Medical Sciences 27 Taiping RoadHaidian DistrictBeijing 100850China Personalized Drug Therapy Key Laboratory of Sichuan Province Department of PharmacySichuan Provincial People’s HospitalUniversity of Electronic Science and Technology of ChinaChengdu 611731China Beijing Institute of Pharmacology and Toxicology 27 Taiping RoadHaidian DistrictBeijing 100850China

Although targeted therapy has been extensively investigated for breast cancers,a molecular target with broad application is currently unavailable due to the high heterogeneity of these ***-A(Mam-A),which is overexpressed in most breast carcinomas,has been proposed as a promising ***,the lack of specific targeting moieties due to uncertain binding epitopes hampers further translational ***,seven potential epitopes of Mam-A were disclosed,and a unique epitope was then identified in most types of breast cancers,despite the genotypic *** phage display technology,the epitope was determined to be N-terminal amino acids 42–51 of Mam-A(N42–51).Then,the N42–51 epitope-specific monoclonal antibody,mAb785,was conjugated to poly lactic-co-glycolic acid(PLGA)nanoparticles loaded with therapeutic agents,thereby enhancing the drug uptake and therapeutic efficacy in different genotypes of breast *** computer simulation of the N42–51 epitope and the mAb785 structures,as well as their interactions,further revealed the specific targeting mechanism of the mAb785-conjugated nanoparticles to breast cancers.

关键词： breast cancers epitope

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现代学习型学校建设与教育理念创新

锦州医学院学报（社会科学版） 2005年第4期3卷 47-50页

作者：张和秋福建医科大学护理学院福建福州350004

学习型组织理论是一种全新的管理理论,美国管理学者彼得·圣吉提出了修炼学习型组织的五种模式。社会的发展、学校管理中存在的弊端以及当前学校教育的特点决定了学校管理走向学习型组织管理模式是一种必然趋势。从学习型组织理论出发,... 详细信息

学习型组织理论是一种全新的管理理论,美国管理学者彼得·圣吉提出了修炼学习型组织的五种模式。社会的发展、学校管理中存在的弊端以及当前学校教育的特点决定了学校管理走向学习型组织管理模式是一种必然趋势。从学习型组织理论出发,结合教育理念创新,提出改造与重组传统的学校组织,使之成为学习型学校。

关键词：学习型学校教育理念创新

Stress Induced Leakage Current in Different Thickness Ultrathin Gate Oxide MOSFET

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Journal of Semiconductors 2004年第3期25卷 257-261页

作者：张贺秋许铭真谭长华北京大学微电子学研究所北京100871

A study of the gate current variation is presented for various thickness ultrathin gate oxides ranging from 1.9 to 3.0nm under the constant voltage *** experimental results show the stress induced leakage current(SILC... 详细信息

关键词： stress induce leakage current ultrathin MOSFET trap

An Empirical Direct Tunneling Current Expression for Ultra-Thin Oxide nMOSFETs

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Journal of Semiconductors 2004年第5期25卷 516-519页

作者：张贺秋许铭真谭长华北京大学微电子学研究所北京100871

An empirical expression for the direct tunneling (DT) current is *** expression can be used to calculate the DT current for nMOSFETs with ultra thin oxide when the oxide thickness is considered as an adjustable *** results have good agreement with the experimental *** the oxide thickness obtained is less than the value acquired from the capacitance voltage( C V )method.

关键词： direct tunnel current nMOSFETs ultra thin

Characteristics of Ultra-Thin Oxide pMOSFET Device After Soft Breakdown

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Journal of Semiconductors 2003年第11期24卷 1149-1153页

作者：张贺秋许铭真谭长华北京大学微电子研究院北京100871

The degradation of MOS transistor operation due to soft breakdown of the gate oxide is *** transistor parameters are monitored under homogeneous stress at different temperature until the soft breakdown *** output and transfer characteristic have small change after soft breakdown as the degradations of drain current and threshold voltage is ***,the increment of gate leakage current increases abruptly after the soft *** analysis to the increment of gate leakage current after the soft breakdown shows mechanism of similar Fowler Nordheim(FN) tunneling current.

关键词： FN tunneling MOSFET soft breakdown ultra thin

热氧化法与PLD方法制备ZnO薄膜的特性比较

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固体电子学研究与进展 2005年第4期25卷 503-506页

作者：王兆阳赵杰胡礼中王志俊张贺秋大连理工大学三束材料改性国家重点实验室大连116024

用热氧化与脉冲激光沉积(PLD)两种方法在Si(111)上制备了ZnO薄膜。对两种方法制备的薄膜的形貌、结构和室温下的荧光光谱作了比较,并对ZnO薄膜紫外光(UV)的发射机理作了初步的分析,发现与PLD方法相比,热氧化法制备的ZnO薄膜所产生的紫... 详细信息

用热氧化与脉冲激光沉积(PLD)两种方法在Si(111)上制备了ZnO薄膜。对两种方法制备的薄膜的形貌、结构和室温下的荧光光谱作了比较,并对ZnO薄膜紫外光(UV)的发射机理作了初步的分析,发现与PLD方法相比,热氧化法制备的ZnO薄膜所产生的紫外光发射强度(17816任意相对强度单位a.u.)、半高宽(10nm)和紫外光与可见光的强度比(大约200∶1),都非常优异,认为热氧化法制备的ZnO薄膜的树枝状微晶界面及其方向的随机性有利于紫外光的发射和观测,而PLD方法制备的ZnO薄膜是垂直于衬底的六角柱状结构,紫外光最强的方向在垂直于侧面的方向上。

关键词：热氧化法激光脉冲沉积紫外峰