Anomalous temperature dependent photoluminescence properties of CdS_xSe_(1-x) quantum dots

作     者：YU DongQi CHEN Xi ZHANG HeQiu HU LiZhong SUN JingChang QIAO ShuangShuang SUN KaiTong ZHU JinXia 

作者机构：School of Physics and Electronic TechnologyLiaoning Normal UniversityDalian 116029China School of Physics and Optoelectronic TechnologyDalian University of TechnologyDalian 116024China 

出 版 物：《Science China(Physics,Mechanics & Astronomy)》 (中国科学:物理学、力学、天文学(英文版))

年 卷 期：2010年第53卷第10期

页      面：1842-1846页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：supported by the NSFC (No. 50532080) the Key Laboratory Projects of The Education Department of Liaoning Province (No. 20060131) 

主　　题：CdSxSe1-x quantum dots temperature dependent photoluminescence 

摘      要：CdSxSe1-x quantum dots were fabricated by a simple spin-coating heat volatilization method on InP *** dependent photoluminescence of CdSxSe1-x quantum dots was carried out in a range of 10-300 *** integrated photoluminescence intensity revealed an anomalous behavior with increasing temperature in the range of 180-200 *** band gap energy showed a redshift of 61.34 meV when the temperature increased from 10 to 300 *** component ratio of S to Se in the CdSxSe1-x quantum dots was valued by both the X-ray diffraction data and photoluminescence peak energy at room temperature according to Vegard ***,the parameters of the Varshni relation for CdS0.9Se0.1 materials were also obtained using photoluminescence peak energy as a function of temperature and the best-fit curve:α=(3.5 ± 0.1)10-4 eV/K,and β=210 ± 10 K (close to the Debye temperature θD of the material).