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Probing phase transition of band topology via radiation topology

Photonics Research 2024年第6期12卷 1150-1157页

作者： CHANG-YIN JI WENZE LAN PENG FU GANG wang CHANGZHI GU yeliang wang JIAFANG LI YUGUI YAO BAOLI LIU Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement(MOE) Beijing Key Laboratory of Nanophotonics&Ultrafine Optoelectronic Systemsand School of PhysicsBeijing Institute of TechnologyBeijing 100081China School of Integrated Circuits and Electronics MIIT Key Laboratory for Low-Dimensional Quantum Structure and DevicesBeijing Institute of TechnologyBeijing 100081China Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China School of Physical Sciences CAS Key Laboratory of Vacuum PhysicsUniversity of Chinese Academy of SciencesBeijing 100190China CAS Center for Excellence in Topological Quantum Computation CAS Key Laboratory of Vacuum PhysicsUniversity of Chinese Academy of SciencesBeijing 100190China

Topological photonics has received extensive attention from researchers because it provides brand new physical principles to manipulate *** topology is characterized using the Berry phase defined by Bloch *** now,the scheme for experimentally probing the topological phase transition of band topology has always been relatively lacking in topological ***,radiation topology can be aroused by the far-field polarization singularities of Bloch states,which is described by the Stokes *** such two types of topologies are both related to Bloch states on the band structures,it is rather surprising that their development is almost ***,in optical analogs of the quantum spin Hall effects(QSHEs)and Su-Schrieffer-Heeger model,we reveal the correlation between the phase transition of band topology and radiation topology and then demonstrate that the radiation topology can be employed to study the band topological *** experimentally demonstrate such an intriguing phenomenon in optical analogs of *** findings not only provide an insightful understanding of band topology and radiation topology,but also can serve as a route to manipulate light.

关键词： transition topology topological

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Atomic tracking of thermally-driven structural evolution in 2D crystals:Case of NbSe_(2)

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InfoMat 2024年第2期6卷 90-98页

作者： Baofei Hou Teng Zhang Tingting wang Hongyan Ji Huixia Yang Liangguang Jia Xu Han Jingsi Qiao Yu Zhang Liwei Liu Hong-Jun Gao yeliang wang School of Integrated Circuits and Electronics&Yangtze Delta Region Academy Beijing Institute of TechnologyBeijingthe People's Republic of China Institute of Physics Chinese Academy of SciencesBeijingthe People's Republic of China

Advanced atomic tracking techniques play a critical role in characterizing structural evolution,elucidating fundamental mechanisms of exotic phenomena and tailoring delicate *** driven structural modulation in 2D crystals,such as the charge density wave(CDW),often leads to intriguing quantum properties,making them a valuable platform for exploring fundamental physics and potential device ***,despite their significance,experimental studies addressing atomic tracking of thermally-driven structural evolution in 2D crystals have been ***,we utilize high-accuracy variable-temperature atomic tracking measurements with scanning tunneling microscopy(STM)to directly observe a series of structural transitions in a model 2D crystal,namely NbSe_(2).With the atomic tracking technique,we confirm the existence of the universal thermally-driven CDW transition hysteresis between the heating and cooling *** transition hysteresis,characterized by a constant temperature offset,represents a new phenomenon of structural *** findings provide a feasible method to track CDW transitions at the atomic scale in 2D crystals,significantly contributing to a better understanding and the potential modulation of these materials'functions in nanodevices.

关键词： 2D crystal atomic tracking technique structural evolution temperature hysteresis

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从本身违法到合理原则——数字平台自我优待的反垄断分析

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数字法治 2024年第3期 193-206页

作者：王业亮中国人民大学经济学院

自我优待是数字时代搭售、拒绝交易与差别待遇等行为的统称。受益于跨界整合,数字平台具有双重身份优势。自我优待可能是数字平台提高竞争对手成本、提取垄断租金与排除潜在市场进入者的垄断行为,也可能是创新行业“为市场而竞争”模式... 详细信息

自我优待是数字时代搭售、拒绝交易与差别待遇等行为的统称。受益于跨界整合,数字平台具有双重身份优势。自我优待可能是数字平台提高竞争对手成本、提取垄断租金与排除潜在市场进入者的垄断行为,也可能是创新行业“为市场而竞争”模式的正常产物。数字平台自我优待既可能产生排除、限制竞争的不利后果,也可能因平台间竞争而具有经济效率方面的合理性。欧盟《数字市场法》对数字平台自我优待采取本身违法的事前规制方式,可能存在一刀切的过度规制。基于合理原则进行个案式的反垄断分析,更能合理应对数字平台的自我优待问题。

关键词：自我优待数字平台本身违法合理原则反垄断规制

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数字化转型与企业集团决策权配置

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经济理论与经济管理 2024年第4期44卷 31-50页

作者：杨瑞龙王业亮王一兆任羽卓中国人民大学经济学院 100872

决策权配置对企业集团的生存与发展具有重要意义。在数字经济时代,企业集团的数字化转型将深刻改变决策权配置模式。本文构建理论模型并使用A股上市公司2011—2021年数据实证检验了数字化转型对企业集团决策权配置的影响。研究发现:数... 详细信息

决策权配置对企业集团的生存与发展具有重要意义。在数字经济时代,企业集团的数字化转型将深刻改变决策权配置模式。本文构建理论模型并使用A股上市公司2011—2021年数据实证检验了数字化转型对企业集团决策权配置的影响。研究发现:数字化转型显著降低了企业集团决策权的集中度,促使决策权向子公司转移。在使用工具变量、DID以及PSM等多种稳健性检验方法后,主要结论仍然成立。渠道分析表明:数字化转型通过降低企业集团面临的不确定性以及降低子公司与母公司间的相对信息成本两条途径促使决策权向子公司转移。此外,数字化转型促进分权的效应在民营、子公司数量更少和子公司承担业务量更轻的企业集团中表现更为明显。本文的研究对公司治理具有重要意义,为数字时代企业集团决策权配置提供了理论与经验支撑。

关键词：数字化转型决策权配置不确定性相对信息成本

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Two-dimensional materials for future information technology: status and prospects

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Science China(Information Sciences) 2024年第6期67卷 1-147页

作者： Hao QIU Zhihao YU Tiange ZHAO Qi ZHANG Mingsheng XU Peifeng LI Taotao LI Wenzhong BAO Yang CHAI Shula CHEN Yiqi CHEN Hui-Ming CHENG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang KONG Jia LI Qian LI Weisheng LI Lei LIAO Bilu LIU Can LIU Chunsen LIU Guanyu LIU Kaihui LIU Liwei LIU Sheng LIU Yuan LIU Donglin LU Likuan MA Feng MIAO Zhenhua NI Jing NING Anlian PAN Tian-Ling REN Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao TIAN Dong wang Hao wang Haomin wang Jialong wang Junyong wang Wenhui wang Xingjun wang yeliang wang Yuwei wang Zhenyu wang Yao WE... School of Electronic Science and Engineering Nanjing University School of Integrated Circuits Interdisciplinary Research Center for Future Intelligent Chips (Chip-X)Nanjing University School of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences School of Physics and Key Lab of Quantum Materials and Devices of the Ministry of Education School of Electronic Science & EngineeringSoutheast University College of Integrated Circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University Suzhou Laboratory State Key Laboratory of Integrated Chips and Systems School of MicroelectronicsFudan University Shaoxin Laboratory Department of Applied Physics The Hong Kong Polytechnic University Key Laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials Science and EngineeringHunan University College of Integrated Circuits Zhejiang University Shenzhen Geim Graphene Center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University State Key Laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical Engineering Hunan University Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China School

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

关键词： two-dimensional (2D) materials information technology production technology standardization of characterization microelectronicdevices optoelectronic devices multi-functional integration

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Orbit-Transfer Torque Switching

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Chinese Physics Letters 2022年第7期39卷 1-2页

作者： yeliang wang School of Integrated Circuits and Electronics MIIT Key Laboratory for Low-Dimensional Quantum Structure and DevicesBeijing Institute of TechnologyBeijing 100081China

In the post-Moore era, memory devices with smaller sizes, lower energy consumption, and higher reliability are desired. As a classic type of non-volatile memory, magnetic random-access memory(MRAM)is outstanding, sinc... 详细信息

关键词： sizes magnetic desired

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Direct evidence of two-dimensional electron gas-like band structures in hafnene

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Nano Research 2022年第4期15卷 3770-3774页

作者： Shaozhu Xiao Meng Liu Linfei Li Jiatao Sun yeliang wang Shaolong He Ningbo Institute of Materials Technology and Engineering Chinese Academy of SciencesNingbo 315201China MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices Beijing Institute of TechnologyBeijing 100081China Department of Chemistry University of Illinois at ChicagoChicagoIllinois 60607USA Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

Two-dimensional(2D)honeycomb-like materials have been widely studied due to their fascinating *** particular,2D honeycomb-like transition metal monolayers,which are good 2D ferromagnet candidates,have attracted intense research *** honeycomb-like structure of hafnium,hafnene,has been successfully fabricated on the Ir(111)***,its electronic structure has not yet been directly ***,we report the electronic structure of hafnene grown on the Ir(111)substrate using angle-resolved photoemission spectroscopy(ARPES).Our results indicate that the presence of spin-orbit coupling and Hubbard interaction suppresses the earlier predicted Dirac cones at the K points of the Brillouin *** observed band structure of hafnene near the Fermi level is very simple:an electron pocket centered at theΓpoint of the Brillouin *** electron pocket shows typical parabolic dispersion,and its estimated electron effective mass and electron density are approximately 1.8_(me)and 7×10^(14)cm^(-2),*** results demonstrate the existence of 2D electron gas in hafnene grown on the Ir(111)substrate and therefore provide key information for potential hafnene-based device applications.

关键词： hafnene monolayer electronic structure angle-resolved photoemission spectroscopy(ARPES) two-dimensional(2D)electron gas

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Ultrafast optical response and ablation mechanisms of molybdenum disulfide under intense femtosecond laser irradiation

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Light(Science & Applications) 2020年第1期9卷 1265-1272页

作者： Changji Pan Lan Jiang Jingya Sun Qingsong wang Feifei wang Kai wang Yongfeng Lu yeliang wang Liangti Qu Tianhong Cui Laser Micro/Nano-Fabrication Laboratory School of Mechanical EngineeringBeijing Institute of Technology100081 BeijingP.R.China Department of Electrical Engineering University of Nebraska-LincolnLincolnNE 68588-0511USA School of Information and Electronics Beijing Institute of Technology100081 BeijingP.R.China Key Laboratory for Advanced Materials Processing Technology Ministry of Education of ChinaDepartment of Mechanical EngineeringTsinghua University100084 BeijingP.R.China Department of Mechanical Engineering University of MinnesotaMinneapolisMN 55455USA

Numerous valuable studies on electron dynamics have focussed on the extraordinary properties of molybdenum disulfide(MoS_(2));however,most of them were confined to the level below the damage *** the electron dynamics of MoS_(2) under intense ultrafast laser irradiation was investigated by experiments and *** kinds of ablation mechanisms were revealed,which led to two distinct types of electron dynamics and final ablation *** a higher fluence,the emergence of superheated liquid induced a dramatic change in the transient reflectivity and micro-honeycomb *** a lower fluence,the material was just removed by sublimation,and the ablation structure was relatively flat.X-ray photoelectron spectroscopic(XPS)measurements demonstrated that thermal decomposition only occurred at the higher ***,a theoretical model was developed to deeply reveal the ultrafast dynamics of MoS_(2) *** simulation results were in good agreement with the temporal and spatial reflectivity distribution obtained from the *** electron and lattice temperature evolution was also obtained to prove the ablation *** results revealed ultrafast dynamics of MoS_(2) above the damage threshold and are helpful for understanding the interaction mechanism between MoS_(2) and intense ultrafast lasers,as well as for MoS_(2) processing applications.

关键词： intense molybdenum disulfide

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Recent advances of defect-induced spin and valley polarized states in graphene

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Chinese Physics B 2022年第8期31卷 48-56页

作者： Yu Zhang Liangguang Jia Yaoyao Chen Lin He yeliang wang School of Integrated Circuits and Electronics MIIT Key Laboratory for Low-Dimensional Quantum Structure and DevicesBeijing Institute of TechnologyBeijing 100081China Advanced Research Institute of Multidisciplinary Sciences Beijing Institute of TechnologyBeijing 100081China Center for Advanced Quantum Studies Department of PhysicsBeijing Normal UniversityBeijing 100875China

Electrons in graphene have fourfold spin and valley degeneracies owing to the unique bipartite honeycomb lattice and an extremely weak spin-orbit coupling,which can support a series of broken symmetry ***-scale defects in graphene are expected to lift these degenerate degrees of freedom at the nanoscale,and hence,lead to rich quantum states,highlighting promising directions for spintronics and *** this article,we mainly review the recent scanning tunneling microscopy(STM)advances on the spin and/or valley polarized states induced by an individual atomicscale defect in graphene,including a single-carbon vacancy,a nitrogen-atom dopant,and a hydrogen-atom ***,we give a perspective in this field.

关键词： graphene atomic-scale defect broken symmetry spin and valley polarized states

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Monolayer puckered pentagonal VTe_(2):An emergent two-dimensional ferromagnetic semiconductor with multiferroic coupling

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Nano Research 2022年第2期15卷 1486-1491页

作者： Xuanyi Li Zhili Zhu Qing Yang Zexian Cao yeliang wang Sheng Meng Jiatao Sun Hong-Jun Gao Institute of Physics and University of Chinese Academy of Sciences Chinese Academy of SciencesBeijing 100190China School of Information and Electronics MIIT Key Laboratory for Low-Dimensional Quantum Structure and DevicesBeijing Institute of TechnologyBeijing 100081China CAS Center for Excellence in Topological Quantum Computation Beijing 100049China BIT Chongqing Center for Microelectronics and Microsystems Chongqing 401332China

Two-dimensional(2D)magnetic crystals have been extensively explored thanks to their potential applications in spintronics,valleytronics,and topological *** we report a novel monolayer magnet,namely puckered pentagonal VTe_(2)(PP-VTe_(2)),intriguing atomic and electronic structures of which were firmly validated from first-principles *** PP-VTe_(2) exhibits strong intrinsic ferromagnetism and semiconducting property distinct from the half-metallic bulk pyrite VTe_(2)(BP-VTe_(2))*** unusual magnetic anisotropy with large magnetic exchange energies is *** interestingly,the multiferroic coupling between its 2D ferroelasticity and in-plane magnetization is further identified in PP-VTe_(2),lending it unprecedented controllability with external strains and electric *** as an emergent 2D ferromagnetic semiconductor with a novel crystal structure,monolayer PP-VTe_(2) provides an ideal platform for exploring exotic crystalline and spin configurations in low-dimensional systems.

关键词： first-principles puckered pentagonal VTe_(2) ferromagnetic semiconductor ferroelasticity

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