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非法吸收公众存款罪保护法益的重新设定

山东警察学院学报 2021年第6期33卷 67-73页

作者：张小宁曲彦蓉山东大学法学院山东威海264209 山东胶东律师事务所山东威海264299

受到传统经济思维的影响,非法吸收公众存款罪在司法实践中出现了保护法益泛化的现象,一定程度上限制了民间的正当融资活动。为了合理限缩本罪的适用范围,避免刑法对民间正当融资的过度干预,需要重新设定本罪的保护法益。按照阶段法益论... 详细信息

受到传统经济思维的影响,非法吸收公众存款罪在司法实践中出现了保护法益泛化的现象,一定程度上限制了民间的正当融资活动。为了合理限缩本罪的适用范围,避免刑法对民间正当融资的过度干预,需要重新设定本罪的保护法益。按照阶段法益论的观点,本罪的保护法益为制度法益与个人法益,且二者存在位阶差异。非法吸收公众存款罪的实质不法性在于,通过欺诈手段进行非法集资,侵害维系金融交易秩序的金融信用制度,进而对投资者权益造成损害。只有对制度法益与个人法益均造成侵害,才能作为非法吸收公众存款罪处理;单纯侵害制度法益的,不宜被认定为构成本罪。

关键词：非法吸收公众存款罪非法集资保护法益金融信用

纳秒脉冲激光铣削Al2O3陶瓷工艺参数的优化

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激光与光电子学进展 2019年第23期56卷 198-206页

作者：许兆美孟宪凯屈彦荣朱为国郭召恒淮阴工学院江苏省先进制造技术重点实验室江苏淮安223003 江苏大学先进制造与现代装备技术工程研究院江苏镇江212013 江苏大学机械工程学院江苏镇江212013

采用纳秒脉冲激光对Al2O3陶瓷进行激光铣削实验。使用响应面二阶回归模型建立铣削工艺参数与表面粗糙度、铣削深度之间的变化关系,通过灵敏度分析方法识别影响表面粗糙度和铣削深度的关键工艺参数;以最小化表面粗糙度和最大化铣削深度... 详细信息

采用纳秒脉冲激光对Al2O3陶瓷进行激光铣削实验。使用响应面二阶回归模型建立铣削工艺参数与表面粗糙度、铣削深度之间的变化关系,通过灵敏度分析方法识别影响表面粗糙度和铣削深度的关键工艺参数;以最小化表面粗糙度和最大化铣削深度为优化目标,利用遗传算法确定理想的工艺参数组合,并进行实验验证。结果表明:基于响应面法的数学模型预测能力较强,铣削次数及搭接率对表面粗糙度和铣削深度的影响最为显著,优化参数下表面粗糙度与铣削深度的预测值分别为10.471μm和120.526μm,实验值分别为10.835μm和131.277μm,相对误差分别为3.36%和8.19%。

关键词：激光技术激光铣削 Al2O3陶瓷响应面法工艺参数优化

The Time-effects and Concentration-effects of Lead-exposure on HB Cell Differential Gene Expression

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The Time-effects and Concentration-effects of Lead-exposure ...

Approaching high-performance lithium storage materials by constructing Li_(2)ZnTi_(3)O_(8)@LiAlO_(2) composites

2007中国科协年会

作者： Meng Jinping Liu Yunbo Yang Xu Sun Shuhua Wang yanrong qu Yi Yang Shaojie Li Zengqiang Institute of Laboratory Animal Science,Chinese Acadenry of Medical Sciences(CAMS)& Peking Union Medical College(PUMC),Beijing,100021

Objective:To investigate the time-effects and concentration-effects of differential gene expression of Human bladder(HB)to ***:Exposing the in vitro HB cell to either 2.5 μN and 5μM lead acetate for 8h and 24h,2.5μM sodium acetate for 8h and control RNA was extracted for the cDNA gene microarrays *** the ratio value(after normalization)＜0.5 or＞2 as the differential expressed genes which were used for clusting analysis,and selected genes by ***:There are 2190 differential expressed genes in HB to lead-exposure.45 genes are up-regulated and 40 genes are down-regulated both lead concontration for both ***:Numerous genes expression are changed in lead-exposed HB cell,the amount of changed genes expression with low-concentration-long-time and high-concentration-short-time exposure is more than that with low-concentration-short-time and high-concentration-long-time *** regulated pattern(up-regulation and down-regulation)of all changed gene expressionto is stenoplastic,no time-effects and concentration-effects.

关键词： Toxicogenomics HB cell Lead cDNA microarray Clusting analysis

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International Journal of Minerals,Metallurgy and Materials 2023年第4期30卷 611-620页

作者： Jinpeng qu Yushen Zhao Yurui Ji yanrong Zhu Tingfeng Yi School of Materials Science and Engineering Northeastern UniversityShenyang 110819China Key Laboratory of Dielectric and Electrolyte Functional Material Hebei Province School of Resources and MaterialsNortheastern University at QinhuangdaoQinhuangdao 066004China

The Li_(2)ZnTi_(3)O_(8)@Li AlO_(2)was synthesized by a facile high-temperature solid-state *** LiAlO_(2)modification does not alter the morphology and particle size of Li_(2)Zn Ti_(3)O_(8)(LZTO).The LiAlO_(2)modification improves the structure stability,intercalation/deintercalation reversibility of lithium-ions,and electrochemical reaction activity of Li_(2)Zn Ti_(3)O_(8),and promotes the transfer of lithium *** from the unique component,Li_(2)Zn Ti_(3)O_(8)@Li AlO_(2)(8wt%) shows a good rate performance with charge capacities of 203.9,194.8,187.4,180.6,and177.1 mAh·g^(-1)at 0.5,1,2,3,and 5 C,***,pure LZTO only delivers charge capacities of 134.5,109.7,89.4,79.9,and 72.9 mAh·g^(-1)at the corresponding *** at large charge–discharge rate,the Li_(2)Zn Ti_(3)O_(8)@Li AlO_(2)(8wt%) composite indicates a good cycle performance with a high reversible charge/discharge capacity of 263.5/265.8 mAh·g^(-1)at 5 C after 150 *** introduction of LiAlO_(2)on the surface of Li_(2)Zn Ti_(3)O_(8)enhances electronic conductivity of the composite,resulting in the good electrochemical performance of Li_(2)Zn Ti_(3)O_(8)@Li AlO_(2)***_(2)Zn Ti_(3)O_(8)@LiAlO_(2)(8wt%) composite shows a good potential as an anode material for the next generation of high-performance Li-ion batteries.

关键词： lithium-ion battery anode Li_(2)ZnTi_(3)O_(8) LiAlO_(2) lithium storage performance

Inhaled heparin polysaccharide nanodecoy against SARS-CoV-2 and variants

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Acta Pharmaceutica Sinica B 2022年第7期12卷 3187-3194页

作者： Bin Tu Huiyuan Wang Xinran An Jingkun qu Qianqian Li yanrong Gao Mingjie Shi Hong Qiu Yongzhuo Huang State Key Laboratory of Drug Research Shanghai Institute of Materia MedicaChinese Academy of SciencesShanghai 201203China University of Chinese Academy of Sciences Beijing 100049China University of Michigan College of Pharmacy Ann ArborMI 48109USA School of Chinese Materia Medica Nanjing University of Chinese MedicineNanjing 210023China Nanchang University College of Pharmacy Nanchang 330006China Zhongshan Institute for Drug Discovery Shanghai Institute of Materia MedicaChinese Academy of SciencesZhongshan 528437China NMPA Key Laboratory for quality Research and Evaluation of Pharmaceutical Excipients Shanghai 201203China Taizhou University School of Advanced StudyInstitute of Natural Medicine and Health ProductTaizhou 318000China

To the Editor:As of January 27,2022,there were 363,062,293 cases and 5,645,884deaths from the COVID-19 *** prevalent mutated strains have aggravated the global ***-Co V-2 is highly mutable,and the mutations on the spike(S)protein resulted in a high transmission of COVID-19 and vaccine breakthrough *** example,there is a notable decrease in neutralizing ability of BNT162b2 vaccination-elicited antibodies against the Delta and other variants4,5,and attenuation of peak viral burden and vaccine effectiveness are reduced with Delta variant6.

关键词： SARS-CoV-2 Delta variant Heparan sulfate Spike protein Heparin nanoparticle Pulmonary delivery

Study on Simulation and Profile Prediction of Atomic Layer Deposition

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Journal of Microelectronic Manufacturing 2020年第3期3卷 18-27页

作者： Lei qu Chen Li Jiang Yan Rui Chen Jing Zhang yanrong Wang Yayi Wei North China University of Technology Beijing 100144 Key Laboratory of Microelectronic Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029

The Atomic Layer Deposition process(ALD)is widely used in FinFET,3D-NAND and other important technologies because of its self-limiting signature and low growth *** recent years,the development of computer enables chances for ALD process simulation in order to improve the process R&D *** this paper,steady state theory and vacuum pump theory are implemented to develop the growth rate algorithm of atomic layer *** dynamic evolution of the deposition profile is realized based on cellular automata method,and fits the relationship between temperature and growth rate in HfO2 *** model accuracy and simulation results are verified with high *** on the simulation results of this model,the influence of different substrate size and environmental dose on growth rate of pore structure is studied and *** the case of deep hole,high depth-to-width ratio hole,or when the gas entry time is below saturation,the growth rate decreases at the pore ***,the simulation considering the angle-of-inclination of the hole’s tapered sidewall indicates that the greater the angle,the better the distribution of flux.

关键词： Atomic Layer Deposition process simulation profile model temperature fitting film of HfO2

InfoMat:A cross-field exploration of information technology and materials science

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InfoMat 2019年第1期1卷 4-5页

作者： yanrong Li Qihua Xiong Yichun Liu Jianhua Hao Roberto Morandotti Carole Diederichs State Key Laboratory of Electronic Thin Film and Integrated Devices University of Electronic Science and Technology of ChinaChengduChina Division of Physics and Applied Physics School of Physical and Mathematical SciencesNanyang Technological UniversitySingapore Center for Advanced Optoelectronic Functional Materials Research Northeast Normal UniversityChangchunChina Department of Applied Physics Hong Kong Polytechnic UniversityHung HomHong Kong Institut National de la Recherche Scientifique Universitédu QuébecVarennesQuebecCanada Laboratoire Pierre Aigrain Ecole Normale SupérieurePSL Research UniversitySorbonne UniversitésParisFrance

As our modern society continuously embraces the captivating concepts of automation,artificial intelligence,virtual/augmented reality,and machine learning,information technology has extensively influenced all aspects of our personal,professional,and social *** technology will continue to transform the world for decades to ***,the innovation of information technology not only relies on the development of sophisticated algorithms and programming but also requires novel materials and high-performance devices to achieve interactions between humans and *** microprocessors and other key components shrinking down to nanoscale,electronic devices have fundamentally altered our communication and working patterns,ushering in a new era of the“Internet of Things.”However,current microelectronic technologies still need to overcome the physical limitations of traditional semiconductor materials to keep“Moore's law”*** from different fields have realized that developing novel and reliable materials is essential to improving computing capability and device portability and functionality while reducing energy *** unremitting efforts of cross-field research works have broadened the academic horizon and brought together materials scientists,chemists,applied and theoretical physicists,and electrical engineers,designing new material paradigms and state-of-the-art manufacturing methods or reviving present materials for brand-new applications for next-generation information technology.

关键词： overcome programming designing

Development and Prospect of Process Models and Simulation Methods for Atomic Layer Deposition

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Journal of Microelectronic Manufacturing 2019年第2期2卷 26-38页

作者： Lei qu Rui Chen Xiaoting Li Jing Zhang yanrong Wang Shuhua Wei Jiang Yan Yayi Wei North China University of Technology Beijing 100144 China Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 China

Thin film deposition is one of the most important processes in IC manufacturing. In this paper, several typical models and numerical simulation methods for thin film deposition and atomic layer deposition are introduced. Several modeling methods based on the characteristics of atomic layer deposition are introduced, it includes geometric method, cellular automata and multiscale simulation. The principle of each model and simulation method is explained, and their advantages and disadvantages are analyzed. Finally, the development direction of thin film deposition and atomic layer deposition modeling is prospected, and some modeling ideas are also provided.

关键词： thin film deposition atomic layer deposition growth model prediction model simulation method

Analysis of Current Research Status of Plasma Etch Process Model

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Journal of Microelectronic Manufacturing 2018年第1期1卷 21-34页

作者： Xiaoting Li Rui Chen Lei qu Xuanmin Zhu Jing Zhang yanrong Wang Shuhua Wei Jiang Yan Yayi Wei North China University of Technology Beijing 100144China Key Laboratory of Microelectronic Devices&Integrated Technology Institute of Microelectronics of Chinese Academy of SciencesBeijing 100029China

This paper summarizes the status of the plasma etch process modeling *** mainly introduces typical etching models employing the analytical method,geometric method,system identification method,basic principle simulation method,as well as empirical *** model’s basic principles,application scopes,advantages and disadvantages are *** on these,the development history of the etch process modeling is summarized,and the development opportunities of the etch model are *** paper provides a brief view for establishment of the plasma etching process model.

关键词： plasma etching etching model simulation