Analysis of Current Research Status of Plasma Etch Process Model

作     者：Xiaoting Li Rui Chen Lei Qu Xuanmin Zhu Jing Zhang Yanrong Wang Shuhua Wei Jiang Yan Yayi Wei 

作者机构：North China University of TechnologyBeijing 100144China Key Laboratory of Microelectronic Devices&Integrated TechnologyInstitute of Microelectronics of Chinese Academy of SciencesBeijing 100029China 

出 版 物：《Journal of Microelectronic Manufacturing》 (微电子制造学报（英文）)

年 卷 期：2018年第1卷第1期

页      面：21-34页

学科分类：0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 

主　　题：plasma etching etching model simulation 

摘      要：This paper summarizes the status of the plasma etch process modeling *** mainly introduces typical etching models employing the analytical method,geometric method,system identification method,basic principle simulation method,as well as empirical *** model’s basic principles,application scopes,advantages and disadvantages are *** on these,the development history of the etch process modeling is summarized,and the development opportunities of the etch model are *** paper provides a brief view for establishment of the plasma etching process model.