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Comparative study of the extraction selectivity of PFO-BPy and PCz for small to large diameter single-walled carbon nanotubes

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Nano Research 2022年第9期15卷 8479-8485页

作者： Fang Liu Xingxing Chen Meiqi Xi Nan Wei Lan Bai Lianmao Peng Yu Cao xuelei liang Center for Carbon-Based Electronics Peking UniversityBeijing 100871China Key Laboratory for the Physics and Chemistry of Nanodevices School of ElectronicsPeking UniversityBeijing 100871China Shanxi Institute for Carbon-Based Thin Film Electronics Peking University(SICTFE-PKU)Taiyuan 030012China Taiyuan Laboratory for Carbon-Based Thin Film Electronics Taiyuan 030012China

Semiconducting single-walled carbon nanotubes(s-SWCNTs)are fascinating materials for future electronic and optical applications.Conjugated polymer wrapping is one of the most promising methods for mass production of high purity s-SWCNTs.However,its chiral selectivity is relatively inferior to other s-SWCNT production methods.In this paper,the chiral selectivity of two polymers,poly[(9,9-dioctylfluorenyl-2,7-diyl)-alt-co-(6,6′-{2,2′-bipyridine})](PFO-BPy)and poly[9-(1-octylonoyl)-9H-carbazole-2,7-diyl](PCz),which are representatives of widely used polyfluorene and polycarbazole families,respectively,were comparatively studied.Both polymers exhibited high selectivity for a subset of existing chiral species in each of the commercially available raw SWCNT materials(CoMoCAT,HiPco,and arc-discharge)which cover a diameter range of 0.6–1.8 nm.Less chiral species were selected by PFO-BPy from small diameter(1.2 nm)raw materials.High chiral purity(6,5)(>99%)and(7,5)(>75%)solutions were extracted by PFO-BPy and PCz from CoMoCAT materials,respectively.The different chiral angle and diameter selections for different raw materials by both polymers were ascribed to their different geometrical structures and related polymer-tube interactions.Our work provides indispensable information for better understanding the mechanism of polymer wrapping method and improving extraction of single chirality sSWCNTs.

关键词： carbon nanotube polymer wrapping poly[(9 9-dioctylfluorenyl-2 7-diyl)-alt-co-(6 6′-{2 2′-bipyridine})](PFO-BPy) poly[9-(1-octylonoyl)-9H-carbazole-2 7-diyl](PCz) chiral selectivity

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Ultraviolet/ozone and oxygen plasma treatments for improving the contact of carbon nanotube thin film transistors

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Science Bulletin 2018年第12期63卷 802-806页

作者： Qi Huang Jiye Xia Jie Zhao Guodong Dong Fang Liu Hu Meng xuelei liang Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics Peking UniversityBeijing 100871China BOE Technology Group Co. Ltd.Beijing 100176China

Carbon nanotube thin film transistor(CNT-TFT) is an emerging technology for future macroelectronics,such as chemical and biological sensors,optical detectors,and the backplane driving circuits for flat panel displays.The mostly reported fabrication method of CNT-TFT is a lift-off based photolithography process.In such fabrication process,photoresist(PR) residue contaminates the interface of tube-metal contact and deteriorates the device performance.In this paper,ultraviolet ozone(UVO) and oxygen plasma treatments were employed to remove the PR contamination.Through our well-designed experiments,the UVO treatment is confirmed an effective way of cleaning contamination at the tube-metal interface,while oxygen plasma treatment is too reactive and hard to control,which is not appropriate for CNT-TFTs.It is determined that 2–6 min UVO treatment is the preferred window,and the best optimized treatment time is 4 min,which leads to 15% enhancement of device performance.

关键词：晶体管臭氧血浆电影碳制造方法光致抗蚀剂面板显示

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Charge trap-based carbon nanotube transistor for synaptic function mimicking

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Nano Research 2021年第11期14卷 4258-4263页

作者： Jie Zhao Fang Liu Qi Huang Tongkang Lu Meiqi Xi Lianmao Peng xuelei liang Center for Carbon-Based Electronics Peking UniversityBeijing100871China Key Laboratory for the Physics and Chemistry of Nanodevices Department of ElectronicsPeking UniversityBeijing100871China Shanxi Institute for Carbon-Based Thin Film Electronics Peking University(SICTFE-PKU)Taiyuan030012China Taiyuan Laboratory for Carbon-Based Thin Film Electronics Taiyuan030012China

Brain-inspired neuromorphic computing is expected for breaking through the bottleneck of the computer of conventional von Neumann architecture. To this end, the first step is to mimic functions of biological neurons and synapses by electronic devices. In this paper, synaptic transistors were fabricated by using carbon nanotube (CNT) thin films and interface charge trapping effects were confirmed to dominate the weight update of the synaptic transistors. Large synaptic weight update was realized due to the high sensitivity of the CNTs to the trapped charges in vicinity. Basic synaptic functions including inhibitory post-synaptic current (IPSC), excitatory post-synaptic current (EPSC), spike-timing-dependent plasticity (STDP), and paired-pulse facilitation (PPF) were mimicked. Large dynamic range of STDP (> 2,180) and low power consumption per spike (∼ 0.7 pJ) were achieved. By taking advantage of the long retention time of the trapped charges and uniform device-to-device performance, long-term image memory behavior of neural network was successfully imitated in a CNT synaptic transistor array.

关键词： carbon nanotube charge trap synaptic transistor long-term memory

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Quality metrology of carbon nanotube thin films and its application for carbon nanotube-based electronics

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Nano Research 2020年第6期13卷 1749-1755页

作者： Jie Zhao Lijun Shen Fang Liu Pan Zhao Qi Huang Hua Han Lianmao Peng xuelei liang Center for Carbon-Based Electronics Peking UniversityBeijing100871China Key Laboratory for the Physics and Chemistry of Nanodevices Department of ElectronicsPeking UniversityBeijing100871China National Laboratory of Pattern Recognition Institute of AutomationChinese Academy of SciencesBeijing100190China School of Future Technology University of Chinese Academy of SciencesBeijing100049China Institute of Automation Harbin University of Science and TechnologyHarbin150080China

Large area,highly uniform,and density controllable carbon nanotube(CNT)films,either well-aligned or random network,are required for practical application of CNT-based electronics.Mass production methods for such CNT films and corresponding quality metrology,which are critical for pushing the CNT-based transistor technology to manufacturing,should be developed in advance.Much progress has been made on fabrication of CNT films;however,there still lacks a metrology for thoroughly quantifying their quality until now.In this paper,through comparing study of CNT films fabricated by dip-coating(DC)and direct deposition(DD)methods,local anisotropy in the film is revealed to impact the performance uniformity of devices so fabricated in a spatial scale dependent manner.The anisotropy effect should be taken into account for the quality characterization of CNT films,which was not noticed in previous studies.Based on these findings,we propose a four-parameter metrology to quantify the overall quality of the CNT films,which includes the local tube density(DL),global density uniformity(Cv),local degree of order(OL),and the relative tube proportion in a certain orientation(Pθ)at a location.The four-parameter characterization and corresponding device performance confirm DC films are superior to DD films for practical application.The four-parameter metrology is not only powerful for overall quality evaluation of CNT films,but also able to predict the fluctuation of devices’performance.Therefore,this material metrology is important for devices and circuits design and valuable for pushing the CNT-based transistor technology forward.

关键词： carbon nanotube thin films quality metrology local anisotropy transistors

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Solvothermal-Assisted Exfoliation Process to Produce Graphene with High Yield and High Quality

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Nano Research 2009年第9期2卷 706-712页

作者： Wen Qian Rui Hao Yanglong Hou Yuan Tian Chengmin Shen Hongjun Gao xuelei liang Department of Advanced Materials and Nanotechnology College of EngineeringPeking UniversityBeijing 100871China Institute of Physics Chinese Academy of SciencesBeijing 100190China Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics Peking UniversityBeijing 100871China

Monolayer and bilayer graphene sheets have been produced by a solvothermal-assisted exfoliation process in a highly polar organic solvent,acetonitrile,using expanded graphite(EG)as the starting material.It is proposed that the dipole-induced dipole interactions between graphene and acetonitrile facilitate the exfoliation and dispersion of graphene.The facile and effective solvothermal-assisted exfoliation process raises the low yield of graphene reported in previous syntheses to 10 wt%12 wt%.By means of centrifugation at 2000 rpm for 90 min,monolayer and bilayer graphene were separated effectively without the need to add a stabilizer or modifi er.Electron diffraction and Raman spectroscopy indicate that the resulting graphene sheets are high quality products without any signifi cant structural defects.

关键词： Graphene solvothermal-assisted exfoliation monolayer and bilayer high quality

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High-yield and low-cost separation of high-purity semiconducting single-walled carbon nanotubes with closed-loop recycling of raw materials and solvents

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Nano Research 2021年第11期14卷 4281-4287页

作者： Fang Liu Xingxing Chen Haoming Liu Jie Zhao Meiqi Xi Hongshan Xiao Tongkang Lu Yu Cao Yan Li Lianmao Peng xuelei liang Center for Carbon-Based Electronics Peking UniversityBeijing100871China Key Laboratory for the Physics and Chemistry of Nanodevices Department of ElectronicsPeking UniversityBeijing100871China College of Chemistry and Molecular Engineering Peking UniversityBeijing100871China Shanxi Institute for Carbon-Based Thin Film Electronics Peking University(SICTFE-PKU)Taiyuan030012China Taiyuan Laboratory for Carbon-Based Thin Film Electronics Taiyuan030012China

Semiconducting single-walled carbon nanotubes (s-SWCNTs) are the foundation of CNT-based electronics and optoelectronics. For practical applications, s-SWCNTs should be produced with high purity, high structural quality, low cost, and high yield. Currently conjugated polymer wrapping method shows great potential to fulfill these requirements due to its advantages of simple operation process, high purity separation, and easy scaling-up. However, only a small portion of both CNTs and polymers go into the final solution, and most of them are discarded after a single use, resulting in high cost and low yield. In this paper, we introduce a closed-loop recycling strategy, in which raw materials (CNTs and polymers) and solvents were all recycled and reused for multiple separation cycles. In each cycle, high-purity (> 99.9%) s-SWCNTs were obtained with no significant change of structural quality. After 7 times of recycling and separation, the material cost was reduced to ∼ 1% in comparison with commercially available products, and total yield was increased to 36% in comparison with 2%–5% for single cycle separation. Our proposed closed-loop recycling strategy paves the way for low-cost and high-yield mass production of high-quality s-SWCNTs.

关键词： carbon nanotubes closed-loop recycling high-yield low-cost high purity

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Large-area and highly uniform carbon nanotube film for nigh-performance thin film transistors

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Nano Research 2018年第8期11卷 4356-4367页

作者： Guodong Dong Jie Zhao Lijun Shen Jiye Xia Hu Meng Wenhuan Yu Qi Huang Hua Han xuelei liang Lianmao Peng Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics Peking University 8eijing 100871China Institute of Automation Chinese Academy of Sciences Beijing 100190 China University of Chinese Academy of Sciences Beijing 100049 China BOE Technology Group Co. Ltd. Beijing 100176 China Guodong Dong and Jie Zhao contributed equally to this work.

Carbon nanotube thin film transistors （CNT-TFTs） are a potential TFT technology for future high-performance macroelectronics. Practical application of CNT-TFTs requires the production of large-area, highly uniform, density-controllable, repeatable, and high-throughput CNT thin films. In this stud35 CNT films were fabricated on 4-inch Si wafers and 2.5th generation （G2.5） backplane glasses （370 mm×470 ram） by dip coating using a chloroform-dispersed high-purity semiconducting CNT solution. The CNT density was controlled by the solution concentration and coating times, but was almost independent of the substrate lifting speed （1-450 mm.min-1）, which enables high-throughput CNT thin film production. We developed an image processing software to efficiently characterize the density and uniformity of the large-area CNT films. Using the software, we confirmed that the CNT films are highly uniform with coefficients of variance （Cv）〈 10% on 4-inch Si wafers and - 13.8% on G2.5 backplane glasses. High-performance CNT-TFTs with a mobility of 45-55 cm2-V-l.s-1 were obtained using the fabricated CNT films with a high-performance uniformity （Cv =11%-13%） on a 4-inch wafer. To our knowledge, this is the first fabrication and detailed characterization of such large-area, high-purity, semiconducting CNT films for TFT applications, which is a significant step toward manufacturing CNT-TFTs.

关键词： carbon nanotube thin film large area uniform transistor

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右美托咪定联合尼卡地平在鼻内镜下鼻中隔矫正术控制性降压中的应用效果

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中国医学文摘（耳鼻咽喉科学） 2024年第1期39卷 90-94页

作者：梁学磊陆克功裴晓龙河西学院附属张掖人民医院甘肃张掖734000

目的探讨鼻内镜下鼻中隔矫正术中应用右美托咪定联合尼卡地平控制性降压的效果。方法选择2020年1月至2022年6月期间在本院择期行鼻内镜下鼻中隔矫正术治疗的82例患者,随机分为对照组(n=41)和观察组(n=41),对照组使用尼卡地平控制性降压... 详细信息

目的探讨鼻内镜下鼻中隔矫正术中应用右美托咪定联合尼卡地平控制性降压的效果。方法选择2020年1月至2022年6月期间在本院择期行鼻内镜下鼻中隔矫正术治疗的82例患者,随机分为对照组(n=41)和观察组(n=41),对照组使用尼卡地平控制性降压,观察组使用右美托咪定联合尼卡地平控制性降压,观察两组在不同时点的MAP、HR变化及T2时点(降压后20分钟)的Fromme术野质量评分(SSFQ),记录两组术中麻醉药和尼卡地平用量、呼吸恢复时间、拔管时间,比较两组患者入PACU时Ramsay镇静评分和VRS评分,统计两组术后不良反应发生情况。结果与T0时点相比,在T1-T3时点两组的MAP、HR均明显下降(P0.05)。在T1-T3时点两组的MAP比较差异无统计学意义(P>0.05),观察组的HR低于对照组(P0.05)。观察组的不良反应总发生率为7.32%,低于对照组的39.02%(P<0.05)。结论右美托咪定联合尼卡地平在鼻内镜下鼻中隔矫正术控制性降压中的应用效果较好,可确保手术视野清晰,减少术中麻醉药和尼卡地平用量,提升患者苏醒舒适度,且不良反应少。

关键词：右美托咪定尼卡地平鼻内镜下鼻中隔矫正术控制性降压

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超声引导下喉上神经内支阻滞复合静脉全麻用于支撑喉镜下声带息肉摘除术的效果观察

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中国医学文摘（耳鼻咽喉科学） 2024年第2期39卷 10-13页

作者：梁学磊裴晓龙陆克功李玉娟河西学院附属张掖人民医院甘肃张掖734000 中国人民解放军联勤保障部队第九四○医院甘肃兰州730000

目的探究超声引导下喉上神经内支阻滞复合静脉全麻用于支撑喉镜下声带息肉摘除术的效果。方法选择2020年3月至2022年5月期间在本院行支撑喉镜下声带息肉摘除术的72例患者为研究对象,随机分成对照组和观察组,每组36例。对照组实施静脉全... 详细信息

目的探究超声引导下喉上神经内支阻滞复合静脉全麻用于支撑喉镜下声带息肉摘除术的效果。方法选择2020年3月至2022年5月期间在本院行支撑喉镜下声带息肉摘除术的72例患者为研究对象,随机分成对照组和观察组,每组36例。对照组实施静脉全麻,观察组实施超声引导下喉上神经内支阻滞复合静脉全麻,观察两组不同时点MAP和HR变化,比较两组术后2h、4h、8h、12h、24h、48h的VAS评分,统计两组术后不良反应。结果与T0时点相比,对照组在T1~T5时点的MAP、HR均明显上升(P0.05);观察组在T1~T5时点的MAP、HR均明显低于对照组(P<0.05)。观察组术后2h、4h、8h、12h、24h、48h的VAS评分均低于对照组(P<0.05)。对照组术后不良反应发生率为16.67%,观察组未见不良反应(P<0.05)。结论超声引导下喉上神经内支阻滞复合静脉全麻用于支撑喉镜下声带息肉摘除术的麻醉效果较好,可维持血流动力学稳定,为术后提供持续稳定的镇痛效果,且不良反应少。

关键词：超声引导喉上神经内支阻滞静脉全麻支撑喉镜声带息肉摘除术

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HIV/AIDS患者抗反转录病毒治疗药物研究进展

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中国艾滋病性病 2022年第11期28卷 1321-1325页

作者：梁雪蕾李群肖晴劳晓洁张福杰首都医科大学附属北京地坛医院北京100015 首都医科大学艾滋病临床诊疗与研究中心北京100015

联合抗反转录病毒治疗(cART)已经使艾滋病成为一种慢性可控性传染病。cART虽然可以使病毒得到抑制,但需终身服药。治疗前耐药率的增加、药物不良反应、每日口服药物的依从性等仍是治疗HIV的主要挑战。基于此,新的抗病毒药物的不断研发,... 详细信息

联合抗反转录病毒治疗(cART)已经使艾滋病成为一种慢性可控性传染病。cART虽然可以使病毒得到抑制,但需终身服药。治疗前耐药率的增加、药物不良反应、每日口服药物的依从性等仍是治疗HIV的主要挑战。基于此,新的抗病毒药物的不断研发,ART方案不断优化,抗病毒药物的有效性、安全性、简便性和耐药屏障也不断提高。复方片剂、新治疗靶点药物和长效药物是目前研发的主要趋势。本文概述了ART的最新进展,以期为临床提供参考。

关键词：艾滋病抗反转录病毒治疗药物

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