Ultraviolet/ozone and oxygen plasma treatments for improving the contact of carbon nanotube thin film transistors

作     者：Qi Huang Jiye Xia Jie Zhao Guodong Dong Fang Liu Hu Meng Xuelei Liang 

作者机构：Key Laboratory for the Physics and Chemistry of Nanodevices and Department of ElectronicsPeking UniversityBeijing 100871China BOE Technology Group Co.Ltd.Beijing 100176China 

出 版 物：《Science Bulletin》 (科学通报（英文版）)

年 卷 期：2018年第63卷第12期

页      面：802-806页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by the National Key Research and Development Program of China(2016YFA0201902) the National Natural Science Foundation of China(61621061) Beijing Municipal Science&Technology Commission(Z171100002017001) 

主　　题：Carbon nanotube Thin film transistor Contact UVO Oxygen plasma 

摘      要：Carbon nanotube thin film transistor （CNT-TFF） is an emerging technology for future macroelectronics, such as chemical and biological sensors, optical detectors, and the backplane driving circuits for flat panel displays. The mostly reported fabrication method of CNT-TFT is a lift-off based photolithography process. In such fabrication process, photoresist （PR） residue contaminates the interface of tube-metal contact and deteriorates the device performance. In this paper, ultraviolet ozone （UVO） and oxygen plasma treat- ments were employed to remove the PR contamination. Through our well-designed experiments, the UVO treatment is confirmed an effective way of cleaning contamination at the tube-metal interface, while oxygen plasma treatment is too reactive and hard to control, which is not appropriate for CNT-TFTs. It is determined that 2-6 rain UVO treatment is the preferred window, and the best optimized treatment time is 4 rain, which leads to 15% enhancement of device performance.