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Design and Realization of InP/AlGaInAs MultipleQuantum Well Ring Laser

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Transactions of Tianjin University 2014年第6期20卷 402-406页

作者： Xie Sheng guo Jing Guan Kun Mao Luhong guo weilian Qi Lifang Li Xianjie School of Electronic In formation Engineering Tianjin UniversityTianjin 300072China The 13th Research Institute of China Electronic Technology Group Corporation Shijiazhuang 050051China

Using beam propagation method （BPM）, key optical design parameters of InP/AlGaInAs multiple quantumwell （MQW） ring laser were numerically analyzed. The influences of waveguide dimensions, curvature radiusand gap size on the coupling efficiency were discussed. An InP/AlGaInAs MQW ring laser with radius of 350 μm wasdesigned and realized. The experimental results show that the designed device, lasing at 1 563.2 nm with side modesuppression ratio higher than 20 dB, exhibited unidirectional bistability between the clockwise and counterclockwisemodes.

关键词： semiconductor laser multiple quantum well optical bistability AlGaInAs

A novel lambda negative-resistance transistor in the 0.5 μm standard CMOS process

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Chinese Science Bulletin 2012年第7期57卷 716-718页

作者： Yan Chen LuHong Mao weilian guo Xin Yu ShiLin Zhang Sheng Xie School of Electronic Information Engineering Tianjin University Tianjin China

A novel negative-resistance transistor (NRT) with a Lambda shaped I-V characteristic is demonstrated in the 0.5 μm standard CMOS process. To save on the number of component devices, this device does not use standard device models provided by CMOS processes, but changes a MOSFET and a BJT into a single device by fabricating them in the same n-well, with a p-type base layer as the MOSFET's substrate. The NRT has a low valley current of -6.82 nA and a very high peak-to-valley current ratio of 3591. The peak current of the device is -24.49 μA which is low enough to reduce the power consumption of the deivce, and the average value of its negative resistance is about 32 kΩ. Unlike most negative-resistance devices which have been fabricated on compound semiconductor substrates in recent years, this novel NRT is based on a silicon substrate, compatible with mainstream CMOS technology. Our NRT dramatically reduces the number of devices, minimizing the area of the chip, has a low power consumption and thus a further reduction in cost.

关键词： CMOS工艺负阻晶体管 lambda 使用标准 MOSFET 设备型号化合物半导体 CMOS技术

AlGaInAs multi-quantum wells ring laser with optical coupling waveguides

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Chinese Science Bulletin 2009年第20期54卷 3716-3719页

作者： LI XianJie QI LiFang guo weilian YU JinLong ZHAO YongLin CAI DaoMin YIN ShunZheng MAO LuHong 13th Institute of China Electronic Technology Group Corporation Shijiazhuang 050051 China School of Electronic Information Engineering Tianjin University Tianjin 300072 China

Based on InAlGaAs multi-quantum wells epitaxy structure for Fabry-Pero laser diode,a multi-quantum wells semiconductor ring laser is realized using ICP dry etching process and polyimide planarization *** laser is generated in a semiconductor resonator ring and is output by two coupled integrated bus *** ring diameter is 700 μm and the width of the waveguide is 3 μ*** output optical power-current(P-I) characteristic and the wavelength spectra of the ring laser are measured using a fiber coupled to the cleaved facet of the bus *** threshold current of the device is 120 mA and the wavelength is 1602 nm at an injected current of 160 *** addition,the operation mode for the laser in the resonator ring is roughly discussed based on the P-I characteristic plot.

关键词：波导激光器多量子阱量子阱半导体激光器耦合环光学输出电流耦合波导激光波长

Aloe emodin promotes mucosal healing by modifying the differentiation fate of enteroendocrine cells via regulating cellular free fatty acid sensitivity

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Acta Pharmaceutica Sinica B 2024年第9期14卷 3964-3982页

作者： weilian Bao Jiaren Lyu Guize Feng Linfeng guo Dian Zhao Keyuan You Yang Liu Haidong Li Peng Du Daofeng Chen Xiaoyan Shen Department of Pharmacology&the Key Laboratory of Smart Drug Delivery Ministry of Education School of PharmacyFudan UniversityShanghai 201210China Department of Natural Medicine School of PharmacyFudan UniversityShanghai 201210China Department of Colorectal and Anal Surgery Xinhua HospitalShanghai Jiao Tong University School of MedicineShanghai 200092China Shanghai Colorectal Cancer Research Center Shanghai 200092China

The proper differentiation and reorganization of the intestinal epithelial cell population is critical to mucosal regeneration post *** retaining cells(LRCs)expressing SRY-box transcription factor 9(SOX9)promote epithelial repair by replenishing LGR5 t intestinal stem cells(ISCs).While,LRCs are also considered precursor cells for enteroendocrine cells(EECs)which exacerbate mucosal damage in inflammatory bowel disease(IBD).The factors that determine LRC-EEC differentiation and the effect of intervening in LRC-EEC differentiation on IBD remain *** this study,we investigated the effects of a natural anthraquinone called aloe emodin(derived from the Chinese herb rhubarb)on mucosal healing in IBD *** findings demonstrated that aloe emodin effectively interfered with the differentiation to EECs and preserved a higher number of SOX9t LRCs,thereby promoting mucosal ***,we discovered that aloe emodin acted as an antagonist of free fatty acid receptors(FFAR1),suppressing the FFAR1-mediated Gbg/serine/threonine-protein kinase(AKT)pathway and promoting the translocation of forkhead box protein O1(FOXO1)into the nucleus,ultimately resulting in the intervention of differentiation *** findings reveal the effect of free fatty acid accessibility on EEC differentiation and introduce a strategy for promoting mucosal healing in IBD by regulating the FFAR1/AKT/FOXO1 signaling pathway.

关键词： LRCs ISCs EECs IBD SOX9 Aloe emodin FFAR1 FOXO1

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RTD/HPT光控单-双稳转换逻辑单元

微纳电子技术 2009年第3期46卷 141-147页

作者：郭维廉天津工业大学信息与通讯学院天津300160 专用集成电路国家重点实验室石家庄050051 天津大学电子信息工程学院天津300072

以光接收器件代替RTD MOBILE(RTD单-双稳转换逻辑单元)电路中的HEMT或HBT,可构成光控MOBILE电路。在比较了四种光控MOBILE结构的基础上,选择RTD/HPT光控结构,重点分析讨论了RTD/HPT光控MOBILE的工作原理,当光控MOBILE的输入光功率超过... 详细信息

以光接收器件代替RTD MOBILE(RTD单-双稳转换逻辑单元)电路中的HEMT或HBT,可构成光控MOBILE电路。在比较了四种光控MOBILE结构的基础上,选择RTD/HPT光控结构,重点分析讨论了RTD/HPT光控MOBILE的工作原理,当光控MOBILE的输入光功率超过一个临界值时,MOBILE的输出电压便会从高电平跳变到低电平;由HPT光增益理论分析了提高HPT性能的措施以及HPT设计中应该注意的问题;介绍了以Si光三极管代替HPT,通过模拟实验,验证了RTD/HPT光控MOBILE的逻辑功能。

关键词：共振隧穿二极管异质结光晶体管光控单-双稳转换逻辑单元逻辑功能验证

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RTD/UTC-PD高速光控MOBILE

微纳电子技术 2009年第5期46卷 263-269,291页

作者：郭维廉天津工业大学信息与通讯学院天津300160 专用集成电路国家重点实验室石家庄050051 天津大学电子信息工程学院天津300072

单向运动载流子光二极管(UTC-PD)具有高速和大电流的特点,与RTD相结合可构成一高速光控MOBILE,能够应用于80Gb/s的光纤通信、光信息处理和高速光网络中。在详细介绍UTC-PD的基础上,讨论了RTD/UTC-PD光控MOBILE的工作原理、材料结构和制... 详细信息

单向运动载流子光二极管(UTC-PD)具有高速和大电流的特点,与RTD相结合可构成一高速光控MOBILE,能够应用于80Gb/s的光纤通信、光信息处理和高速光网络中。在详细介绍UTC-PD的基础上,讨论了RTD/UTC-PD光控MOBILE的工作原理、材料结构和制作工艺、电路性能测量等,并进一步将上述结果推广到交流信号情况下RTD/UTC-PD光控MOBILE的瞬态特性。结果表明,存在三个因素影响该单元电路的工作速度,即交流电流效应、开关延迟时间和UTC-PD器件的带宽。

关键词：单向运动载流子光二极管 RTD/UTC-PD逻辑光控D触发器光控MOBILE 光纤通信

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RTD多值逻辑(MVL)电路

微纳电子技术 2009年第1期46卷 10-15页

作者：郭维廉天津工业大学信息与通讯学院天津300160 专用集成电路国家重点实验室石家庄050051 天津大学电子信息工程学院天津300072

RTD具有双稳和自锁特性,用RTD构成电路可节省大量器件,这一优点在构建多值逻辑电路(MVL RTD)时显得尤为突出。在引用"遏止"概念的基础上介绍了几种典型的MVL RTD电路,包括多幅输入脉冲信号具有选幅功能的文字逻辑门、能提供三个不同电... 详细信息

RTD具有双稳和自锁特性,用RTD构成电路可节省大量器件,这一优点在构建多值逻辑电路(MVL RTD)时显得尤为突出。在引用"遏止"概念的基础上介绍了几种典型的MVL RTD电路,包括多幅输入脉冲信号具有选幅功能的文字逻辑门、能提供三个不同电平输出的三态反相器、将一输入斜坡电压信号变成脉冲输出信号的折线量化器等电路;用"遏止"概念分析了异或门电路的工作原理。

关键词： RTD MVL电路 RTD异或门文字逻辑门三态反相器折线量化器 “遏止”概念

Fabrication and DC Current-Voltage Characteristics of Real Space Transfer Transistor with dual-quantum-well channel

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Fabrication and DC Current-Voltage Characteristics of Real S...

The design and fabrication on gate type resonant tunneling transistor

2008 9th International Conference on Solid-State and Integrated-Circuit Technology

作者： Xin YU Shilin ZHANG Luhong MAO weilian guo Xiaoli WANG School of Electronic Information Eng. Tianjin University

We reported the standard "Λ" shape negative differential resistance as well as a level and smooth valley region in real space transfer transistor (RSTT) with dual-quantum-well channel,which are formed byδ-doping GaAs quantum-well and InGaAs/GaAs heterojunction *** highest peak-to-valley current ratio(PVCR) of RSTT reaches 4 at room *** highest peak current density transconductance(ΔJ/ΔV) is 130ms/mm,which demonstrates the control ability of gate to *** mechanism of obvious NDR of RSTT can be explained that the hot electron in the InGaAs U-shaped quantum-well channel transfers into V-shapedδ-doping GaAs quantum-well channel,and the hot electron transfers into gate electrode from V-shapedδ-doping GaAs quantum-well *** novel NDR device would be expected to applied in NDR circuits to instead of RTD+HEMT.

关键词： Real space transfer(RST) Real space transfer transistor(RSTT) negative differential resistance(NDR) δ-doping InGaAs/GaAs

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Frontiers of Electrical and Electronic Engineering in China 2008年第2期3卷 227-233页

作者： weilian guo Huilai LIANG Ruiliang SONG Shilin ZHANG Luhong MAO Liuchang HU Jianheng LI Haitao QI Zhen FENG guoping TIAN Yuehui SHANG Yongqiang LIU Yali LI Mingwen YUAN Xiaobai LI School of Electronic Information Engineering Tianjin UniversityTianjin 300072China 13th Institute of CETC Shijiazhuang 050051China

In light of fabricating resonant tunneling diode(RTD),in this paper a GaAs-based resonant tunneling transistor with gate structure(GRTT)has been designed and fabricated successfully.A systematic depiction centers on the designs of material structure,device structure,photo-lithography mask,fabrication of device and the measurement and analysis of *** fabricated GRTT has a maximum PVCR of 46 and a maximum transconductance of 8 *** work lays the foundation for further improve-ment on the performance and parameters of RTT.

关键词： resonant tunneling transistor(RTT) gate con-trolled device GaAs based quantum device