Design and Realization of InP/AlGaInAs MultipleQuantum Well Ring Laser

作     者：Xie Sheng Guo Jing Guan Kun Mao Luhong Guo Weilian Qi Lifang Li Xianjie Xie Sheng;Guo Jing;Guan Kun;Mao Luhong;Guo Weilian;Qi Lifang;Li Xianjie

作者机构：School of Electronic In formation EngineeringTianjin UniversityTianjin 300072China The 13th Research Institute of China Electronic Technology Group CorporationShijiazhuang 050051China 

出 版 物：《Transactions of Tianjin University》 (天津大学学报（英文版）)

年 卷 期：2014年第20卷第6期

页      面：402-406页

核心收录：

学科分类：0401[教育学-教育学] 04[教育学] 

基　　金：Supported by the National Natural Science Foundation of China(No.61106052) 

主　　题：semiconductor laser multiple quantum well optical bistability AlGaInAs 

摘      要：Using beam propagation method （BPM）, key optical design parameters of InP/AlGaInAs multiple quantumwell （MQW） ring laser were numerically analyzed. The influences of waveguide dimensions, curvature radiusand gap size on the coupling efficiency were discussed. An InP/AlGaInAs MQW ring laser with radius of 350 μm wasdesigned and realized. The experimental results show that the designed device, lasing at 1 563.2 nm with side modesuppression ratio higher than 20 dB, exhibited unidirectional bistability between the clockwise and counterclockwisemodes.