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Clusters of Ra.ia.ion Defects in Silicon Crysta.s

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Journa. of Modern Physics 2015年第9期6卷 1270-1276页

作者： Hra.t N. Yeritsya. a.a. a. sahakyan Nora.r E. Grigorya. Va.ha.a. V. Ha.utunya. vahan a. sahakyan a.menuhi a. Kha.ha.rya. a.I. a.ikha.ya. Na.iona. Science La.ora.ory (Yereva. Physics Institute) Yerevan Armenia Na.iona. Institute of Metrology Yerevan Armenia

While considera.le progress ha. been a.hieved in ra.ia.ion influence on the solid sta.es, the qua.tita.ive a.sessment of defect production is very sca.ce. In this pa.er ra.ia.ion defects studies in silicon crysta.s a.e briefly reviewed a.d comprehensively a.a.yzed depending on irra.ia.ion energy a.d dose, pa.ing specia. a.tention to electron irra.ia.ion in wide energy spectrum when crysta. la.tice disordered regions (clusters) occur. Electron irra.ia.ion, which is a.simple wa. to introduce intrinsic defects, wa. used a. one of the most powerful techniques to study point a.d cluster defects which a.fect properties of semiconductors depending on irra.ia.ion energy. Funda.enta. a.pects of ra.ia.ion induced defects a.e discussed a.d it is shown tha. they bring informa.ion on the threshold energy for a.omic displa.ement, on the recombina.ion of va.a.cy—interstitia. pa.r a.d ma.nly, on ra.ia.ion defects cluster forma.ion which essentia.ly influences on the irra.ia.ing ma.eria. properties. The determina.ion of the irra.ia.ion critica. dose a.d energy for the forma.ion of homogeneous disordered regions (clusters) a.e deta.led.

关键词： Clusters of Ra.ia.ion Defects Point Ra.ia.ion Defects Irra.ia.ion Dose Irra.ia.ion Energy Semiconductors Silicon

Sca.tering of Conduction Electrons on the Sta.ic Deforma.ion Ra.sed by Irra.ia.ion in n-Ga. Crysta.s

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Journa. of Modern Physics 2015年第13期6卷 1935-1941页

作者： Norik Е. Grigorya. Hra.t N. Yeritsya. Va.ha.a. V. Ha.utyunya. Na.ek a. Ha.obya. Edua.d a. a.eksa.ya. vahan a. sahakyan a. a.ikha.ia. Na.iona. Science La.ora.ory Yerevan Physics Institute Yerevan Armenia Na.iona. Institute of Metrology Yerevan Armenia

Study of spectra. dependences of a.sorption coefficient a. the region of a.sorption by free ca.riers shows tha. the introduction of ra.ia.ion defects in n-Ga. crysta.s lea.s to the a.pea.a.ce of a.ditiona. sca.tering besides of tra.itiona. ones. a.new sca.tering mecha.ism on “frozen” phonons (deforma.ion loca.ized nea. the ra.ia.ion defects) is suggested a.d its beha.ior in experimenta. a.d theoretica. a.pects ta.ing into a.count Х1с-Х3с tra.sitions a. the sca.tering process ha. been studied. It wa. shown tha. the increa.e of “frozen” phonons’ concentra.ion results to the growth of this mecha.ism contribution in the whole sca.tering a.d the a.sorption coefficient by free ca.riers is described a.proxima.ely by low α ~ ω-r, where -1/2 ≤ r ≤ 7/2. Suggested sca.tering mecha.ism a.lows expla.ning qua.ita.ively the decrea.e of r. It wa. esta.lished tha. the dis- ordered by irra.ia.ion region effectively decrea.es the concentra.ion of free ca.riers, but being a.region of increa.ed resistivity, it influences the sca.tering slightly even a. the a.tua. qua.tum region .

关键词： Free Ca.riers a.sorption Irra.ia.ion Sca.tering Mecha.ism Deforma.ion Potentia. Phonon Ga.lium Phosphide

The Influence of Pico-Second Pulse Electron Irra.ia.ion on the Electrica.-Physica. Properties of Silicon Crysta.s

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Journa. of Modern Physics 2016年第12期7卷 1413-1419页

作者： Hra.t N. Yeritsya. a.a. a. sahakyan Nora.r E. Grigorya. Eleonora.a. Ha.hverdya. Va.ha.a. V. Ha.utyunya. vahan a. sahakyan a.menuhi a. Kha.ha.rya. Ba.ra. a. Grigorya. Va.da. Sh. a.a.ya. Ga.a.e a. a.a.uni a.hot S. Va.da.ya. a.I. a.ikha.ya. Na.iona. Science La.ora.ory (Yereva. Physics Institute) Yerevan Armenia Na.iona. Institute of metrology Yerevan Armenia Ca.DLE Synchrotron Resea.ch Institute Yerevan Armenia

The studies of the influence of pico-second (4 × 10-13 sec.) pulse electron irra.ia.ion with energy of 3.5 MeV on the electrica.-physica. properties of silicon crysta.s (n-Si) a.e presented. It is shown tha. in spite of rela.ively low electron irra.ia.ion energy, induced ra.ia.ion defects a.e of cluster type. The beha.ior of ma.n ca.rier mobility depending on tempera.ure a.d irra.ia.ion dose is a.a.yzed a.d cha.ge ca.riers’ sca.tering mecha.isms a.e cla.ified: on ionized impurities, on point ra.ia.ion defects with tra.sition into cluster forma.ion. Dose dependencies of electrica. conductivity a.d ca.rier mobility for sa.ples of va.ious specific resistivities a.e given.

关键词： Silicon Crysta. Electron Irra.ia.ion Pico-Second Pulse Bea. Conductivity Ca.riers’ Mobility

Spa.e Environment Simula.or for Testing of Ma.eria.s a.d Devices

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Journa. of Modern Physics 2013年第2期4卷 180-184页

作者： Hra.t N. Yeritsya. Va.ha.a. V. Ha.utunya. a.a. a. sahakyan Sergej K. Nikoghosya. a.a.i S. Hovha.nisya. Nora.r E. Grigorya. Ka.en Sh. Oha.ya. Eleonora.a. Ha.hverdya. Na.ek a. Ha.opya. vahan a. sahakyan a.I. a.ikha.ya. Na.iona. Science La.ora.ory Yerevan Physics Institute Yerevan Armenia Institute of Metrology of a.menia. Republic Yerevan Armenia

Equipment ha. been designed a.d crea.ed for experimenta. simula.ion of spa.e environment conditions of Geosta.iona.y orbit of the Ea.th. The following conditions a.e supported in the va.uum cha.ber ha.ing volume of 1.2 cubic meters: Va.uum 10-5 Torr. (1.3 × 10-3 Pa., electron bea. with energy up to 8 MeV, tempera.ures from -150°C to +150°C a.d sola. ultra.iolet ra.ia.ion. The peculia.ity of this equipment is the possibility of a.a.yzing complex simulta.eous influence of mentioned a.ove 4 fa.tors on the sa.ple a.d in-situ direct mea.urement of sa.ple pa.a.eters under irra.ia.ion which provides a.most rea. conditions. Silicon single crysta.s used in spa.e environment were tested in the va.uum cha.ber a.d new results were received ha.ing scientific a.d a.plied interest. It wa. shown, pa.ticula.ly, tha. the electro-conductivity of silicon sa.ples ha. higher va.ue a. in-situ condition tha. ex-situ a.ter irra.ia.ion.

关键词： Spa.e Silicon Ra.ia.ion Defects (RD) Conductivity Ca.rier Concentra.ion

The Intera.tion of Impurity Oxygen with Ra.ia.ion Defects in Silicon Crysta.

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Journa. of Modern Physics 2015年第14期6卷 2050-2057页

作者： Hra.t N. Yeritsya. a.a. a. sahakyan Nora.r E. Grigorya. Eleonora.a. Ha.hverdya. Va.ha.a. V. Ha.utyunya. a.a.i S. Hovha.nisya. vahan a. sahakyan a.menuhi a. Kha.ha.rya. Ba.ra. a. Grigorya. La.ra.S. Ha.obya. Ga.a.e a. a.a.uni a.hot S. Va.da.ya. Va.ili M. Tsa.a.ov a.I. a.ikha.ya. Na.iona. Science La.ora.ory (Yereva. Physics Institute) Yerevan Armenia Na.iona. Institute of Metrology Yerevan Armenia Ca.DLE Synchrotron Resea.ch Institute Yerevan Armenia

Present pa.er describes the investiga.ion of va.a.cy (V) a.d interstitia. (I) a.nihila.ion on oxygen a.oms by mea.s of infra.ed (IR) a.sorption a.d Ha.l-effect mea.urements of the a.cumula.ion of va.a.cy-oxygen complexes (VO) in Si crysta.s a. high energy electron irra.ia.ion. Silicon sa.ples, conta.ning a.ong with isola.ed oxygen a.oms, more complica.ed oxygen qua.i-molecules of SiOn (n = 1, 2, 3…) type, were used. a. isochrona. a.d isotherma. a.nea.ing in the tempera.ure ra.ge of 300°C - 350°C, a.a.t from the rea.tion of va.a.cy ca.turing by oxygen a.oms with forma.ion of a.centers, more complica.ed rea.tions with pa.ticipa.ion of va.a.cies a.d oxygen a.oms were observed: a.centers, oxygen conta.ning qua.i-molecules. a.model is suggested to describe the observed processes tha. a.e qua.ita.ively different from those ta.ing pla.e in sa.ples conta.ning completely dissocia.ed oxygen.

关键词： Impurity Oxygen Silicon Crysta. Electron Irra.ia.ion Infra.ed (IR) a.sorption Spectra a.nea.ing Va.a.cy Interstitia. a.om

In-Situ Study of Silicon Single Crysta.s Conductivity under Electron Irra.ia.ion

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Journa. of Modern Physics 2012年第5期3卷 383-387页

作者： Hra.t N. Yeritsya. a.a. a. sahakyan Sergey K. Nikoghosya. Va.ha.a. V. Ha.utyunya. Ka.en Sh. Oha.ya. Nora.r E. Grigorya. Eleonora.a. Ha.hverdya. a.ha.i S. Hovha.nisya. vahan a. sahakyan Ka.o a. Movsisya. a.tur V. Hovha.nisya. a.I. a.ikha.ya. Na.iona. Science La.ora.ory (YerPhI) Institute of Metrology Republic of a.menia Sta.e Nuclea. Sa.ety Regula.ory Committee by the Government of a.menia

The influence of electron ra.ia.ion on the properties of semiconducting silicon single crysta.s (Si)—both n- a.d p-types (currently one of the most widely a.plied ma.eria. in the electronic technology) wa. studied under the electron irra.ia.ion process in-situ in a.r (in common conditions). Higher va.ue of electro-conductivity (σ) during the irra.ia.ion process with respect to a.ter irra.ia.ion wa. observed, which wa. expla.ned by ioniza.ion a.d ca.ture mecha.isms resulting in the forma.ion of non-equilibrium ca.riers (hole-electron pa.rs). The kinetics of ra.ia.ion defects genera.ion, their physica. na.ure, tempera.ure sta.ility a.d rela.a.ion a.e exa.ined. Structura. ra.ia.ion defects forma.ion: point a.d complexes, their influence on the silicon conductivity a.e considered.

关键词： Silicon Ra.ia.ion Defects (RD) Ca.rier Concentra.ion Ca.rier Mobility Conductivity

a.sessment of pollution levels a.d huma. hea.th risk of hea.y meta.s in dust deposited on Yereva.＇s tree lea.es (a.menia.

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a.ta.Geochimica 2017年第1期36卷 16-26页

作者： N. Ma.ha.ya. G. Tepa.osya. O. Belya.va.L. sahakyan a. Sa.ha.elya. Depa.tment of Environmenta. Geochemistry Center for Ecological-Noosphere Studies of the National Academy of Sciences Abovian-68 0025 Yerevan Republic of Armenia

The tota. concentra.ions of Cd,a.,Pb,Cr,Ni,Co,Zn,Cu,a.,Hg,a.d Mo were determined in the a.mospheric dust of the city of Yereva. by a.omic a.sorption spectrometry(a.na.yst PE 800).Hea.y meta. pollution levels were eva.ua.ed by ca.cula.ing geo-a.cumula.ion(I_(geo)) a.d summa.y pollution(Z_c) *** huma. hea.th risk wa. a.sessed using the United Sta.es Environmenta. Protection a.ency's huma. hea.th risk a.sessment *** results show tha. mea. contents of a.l elements tested except Ni a.d Cr were substa.tia.ly higher tha. loca. geochemica. ba.kground *** to the I_(geo),Yereva. territory is strongly-to-extremely polluted by a.,a.,Hg,Mo,a.d *** Z_c a.sessment indica.ed tha. very high pollution wa. detected in 36%of sa.ples,high in 32%,a.era.e in 12%,a.d low in 20%.The hea.th risk a.sessment revea.ed a.nonca.cinogenic risk(HI >1) for children a. 13 sa.plings sites a.d for a.ults a. one sa.pling *** children the risk wa. due to eleva.ed levels of Mo,Cd,Co,a.d a.,while for a.ults,only *** risk(>1:1,000,000) of a. a.d Cr via.ingestion pa.hwa. wa. observed in 25 a.d 14 sa.ples,*** study,therefore,is the ba.e for further deta.led investiga.ions to orga.ize problema.ic site remedia.ion a.d risk reduction mea.ures.

关键词： Urba. dust Hea.y meta.s Pollution levels Hea.th risk a.sessment

Studying DDTs in a.ricultura. soils of selected rura. communities of a.menia

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a.ta.Geochimica 2020年第4期39卷 487-496页

作者： G.Tepa.osya. L.sahakyan O.Belya.va.M.Begla.ya. D.Pipoya. a.Hovha.nisya. a.Sa.ha.elya. The Center for Ecologica.-Noosphere Studies of the Na.iona. a.a.emy of Sciences RA Abovian-68 Street0025 YerevanRepublic of Armenia

To study orga.ochlorine pesticides a.d orga.ophosphorus pesticides contents a.d a.sess pesticideinduced hea.th risk in a.menia.the contents of pesticides were determined in 252 soil sa.ples ta.en from rela.ively la.ge plots of a.ricultura. la.d in 25 rura. *** results showed tha. only∑DDT contents were detected in 39 out of 252 soil *** identified contents of∑DDT ma.nly consisted of pp’-DDE,suggesting historica. use.6 out of 12 rura. communities a.e cha.a.terized by the presence of former pesticide storehouses *** excesses versus Ma.imum a.cepta.le Concentra.ion were observed in 26 out of 39 sa.ples a.d ra.ges from 1.03 to 464.9 *** hea.th risk a.sessment showed tha. non-ca.cinogenic risk is below the a.lowa.le level(HQa.cinogenic risk is a.ove the a.lowa.le level ofa.l ca.es when∑DDT is *** a.l studied rura. communities,the presence of observed∑DDT a.d a.socia.ed risk to the loca. popula.ion wa. detected ma.nly in the ma.ority of sa.pling sites in Jra.hen(a.a.a. region),a.a.us(Kota.q region)a.d Kha.jya.(a.ma.ir region).Therefore,specia. a.tention should be given to the riskiest rura. communities a.d risk reduction mea.ures a.e needed to reduce or elimina.e observed ca.cinogenic hea.th effect.

关键词： Orga.ochlorine pesticides ∑DDT Soil Pollution Hea.th risk a.sessment

The a.sessment of hea.y meta. strea. in the a.r ba.in of Yereva.

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Chinese Journa. Of Geochemistry 2006年第B8期25卷 95-96页

作者： Lilit V. sahakyan Center for Ecologica. Noosphere Studies Na.iona. a.a.emy of Sciences Yereva. a.menia