The Influence of Pico-Second Pulse Electron Irradiation on the Electrical-Physical Properties of Silicon Crystals

作     者：Hrant N. Yeritsyan Aram A. Sahakyan Norair E. Grigoryan Eleonora A. Hakhverdyan Vachagan V. Harutyunyan Vahan A. Sahakyan Armenuhi A. Khachatryan Bagrat A. Grigoryan Vardan Sh. Avagyan Gayane A. Amatuni Ashot S. Vardanyan Hrant N. Yeritsyan;Aram A. Sahakyan;Norair E. Grigoryan;Eleonora A. Hakhverdyan;Vachagan V. Harutyunyan;Vahan A. Sahakyan;Armenuhi A. Khachatryan;Bagrat A. Grigoryan;Vardan Sh. Avagyan;Gayane A. Amatuni;Ashot S. Vardanyan

作者机构：A.I. Alikhanyan National Science Laboratory (Yerevan Physics Institute) Yerevan Armenia National Institute of metrology Yerevan Armenia CANDLE Synchrotron Research Institute Yerevan Armenia 

出 版 物：《Journal of Modern Physics》 (现代物理（英文）)

年 卷 期：2016年第7卷第12期

页      面：1413-1419页

学科分类：07[理学] 070202[理学-粒子物理与原子核物理] 0702[理学-物理学] 

主　　题：Silicon Crystal Electron Irradiation Pico-Second Pulse Beam Conductivity Carriers’ Mobility 

摘      要：The studies of the influence of pico-second (4 × 10-13 sec.) pulse electron irradiation with energy of 3.5 MeV on the electrical-physical properties of silicon crystals (n-Si) are presented. It is shown that in spite of relatively low electron irradiation energy, induced radiation defects are of cluster type. The behavior of main carrier mobility depending on temperature and irradiation dose is analyzed and charge carriers’ scattering mechanisms are clarified: on ionized impurities, on point radiation defects with transition into cluster formation. Dose dependencies of electrical conductivity and carrier mobility for samples of various specific resistivities are given.