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稀有金属材料与工程 2006年第A03期35卷 277-281页

作者： Yuh-Ming Uangl Hung-Te Chung tse-chuan chou Department of Chemical Engineering WuFeng Institute of TechnologyChiayiTaiwan62153China Dpartment of Chemical Engineering National Cheng Kung UniversityTainanTaiwan70101China

A galvanostatic glucose oxidase (GOD_x)/polypyrrole (Ppy) biosensor fabricated through a potential jumping process was *** spite of the instantaneous voltage jumping from 0.95 V to 1.7 V versus Ag/AgCl in the galvanostatic polymerization of pyrrole with commercial GOD_x,this GOD_x enzyme still could be successfully bundled with polypyrrole (Ppy).And,the results also confirmed that this glucose sensor not only possessed of better sensitivity to glucose than that fabricated from potentiometry or mild voltage elevating galvanometry for the similar preparing conditions but also exhibited two-week long-term ***,the kinetic data of Michalis constant (K_m) and Maximum current (I_m) for the optimized sensor were *** discovery this electro-modification process may disclose a novel method for fabricating the other enzyme biosensors.

关键词： conformation conducting galvanostatic dentritic jumping

Fabrication of the Sodium Ions Extended Gate Field Effect Transistor by Using the Entrapment Method

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稀有金属材料与工程 2006年第A03期35卷 246-247页

作者： Jung-chuan chou Department of Electronic Engineering National Yunlin University of Science and TechnologyDouliouTaiwan 640China

The sodium ion is necessary in physiological function and an important element in blood of human body,because the concentration of the sodium ion in the blood directly affects the functions of some organs or pathological feature,how to detect it is an important *** this paper,we measure the concentration of sodium ions by the extended gate field effect transistor (EGFET).We use three different substrates RuO_x/p-Si,ITO glass,SnO_2/ITO to fabricate EGFET,and we choose the optimum *** fabrication of device needed to use the entrapment method.

关键词： sodium ion extended gate field effect transistor(EGFET) entrapment method

Extended Gate Field Effect Transistor Based Measuring of the Vitamin C content of Orange Juice

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稀有金属材料与工程 2006年第A03期35卷 342-343页

作者： Jung-chuan chou Department of Electronic Engineering National Yunlin University of Science and TechnologyDouliouTaiwan 640China

An extended-gate field effect transistor (EGFET)of SnO_2/ITO glass was applied to manufacture the vitamin C ***,we immobilized the ascorbate oxidase with 3-glycidoxypropyltrimethoxysilane (GPTS)method to measure the different concentrations of the vitamin C solution in an optimum measurement *** order to find the best measurement conditions of the biosensor,we studied the vitamin C sensor in different pH values of the phosphate buffer solution (PBS).Additionally,we used experimental results to discuss the response time and response voltage to compare vitamin C with orange juice for the vitamin C sensor.

关键词： orange juice extended-gate field effect transistor SnO2/ITO glass vitamin C sensor

Study of Non-Ideal Effects for Extended Gate Field Effect Transistor Chlorine Ion Sensing Device

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稀有金属材料与工程 2006年第A03期35卷 242-243页

作者： Jung-chuan chou Pei-Lan chou Graduate School of Electronic Engineering National Yunlin University of Science and TechnologyDouliouTaiwan 640China Graduate School of Optoelectronics National Yunlin University of Science and TechnologyDouliouTaiwan 640China

We use the extended gate field effect transistor (EGFET)as the structure of the chlorine ion sensor,and the chlorine ion ionophores (ETH9033 and TDDMAC1)are incorporated into solvent polymeric membrane (PVC/DOS),then the chlorine ion selective membrane is formed on the sensing window,and the fabrication of the EGFET chlorine ion sensing device is *** surface potential on the sensing membrane of the EGFET chlorine ion sensing device will be changed in the different chlorine ion concentration solutions,then changes further gate voltage and drain current to detect chlorine ion *** will study non-ideal effects such as temperature,hysteresis and drift effects for the EGFET chlorine ion sensing device in this paper,these researches will help us to improve the sensing characteristics of the EGFET chlorine ion sensing device.

关键词： extended gate field effect transistor chlorine ion ionophore chlorine ion sensing device temperature effect hysteresis effect drift effect

Study on the Carbon Nanotube Separative Structure for the Extended Gate H^+-Ion Sensitive Field Effect Transistor

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稀有金属材料与工程 2006年第A03期35卷 225-227页

作者： Yi-Hung Liao Jung-chuan chou Graduate School of Engineering Science and Technology National Yunlin University of Science and TechnologyDouliouYunlinTaiwan 640China

We use the carbon nanotube (CNT) as the material of the pH sensing layer of the separative structure for the extended gate H^+-ion sensitive field effect transistor (EGFET) *** CNT paste was prepared with CNT powder,Ag powder,silicagel,the di-n-butyl phthalate and the toluene solvents by appropriate ratio,then immobilized on the silicon substrate to form the carbon nanotube sensing *** measured theⅠ_(DS)-Ⅴ_G curves of the carbon nanotube separative structure EGFET device in the different pH buffer solutions by the Keithley 236Ⅰ-Ⅴmeasurement *** to the experimental results,we can obtain the pH sensitivities of the carbon nanotube separative structure EGFET device,which is 62.54mV/pH from pH1 to pH13.

关键词： carbon nanotube extended gate field effect transistor pH sensitivity buffer solution

Study on the Drift Effect of Potassium Ion Sensing Based on the Extended Gate Field Effect Transistor

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稀有金属材料与工程 2006年第A03期35卷 259-260页

作者： Jung-chuan chou Ching-Hsiang Hsu Department of Electronic Engineering National Yunlin University of Science and TechnologyDouliouTaiwan 640China

The advantages of the extended gate field effect transistor (EGFET) compared with the ion sensitive field effect transistor (ISFET) are easy package,easy preservation,insensitive light effect,and better *** EGFET has above advantages,there are still some non-ideal effects such as drift etc..The drift behavior exists during the measurement process and results in the variation of the output voltage with *** can obtain the drift value by immersing EGFET into the pH solution for 12 hours and measure the rate of the output voltage versus time after S *** study analyzes the sensitivity, stability,and drift effect of the EGFET based on the structure of the ruthenium oxide/silicon (RuO_x/Si) wafer for measuring the potassium *** fabrication of the potassium ion sensor can be widely employed in medical detection.

关键词： potassium ion extended gate field effect transistor RuO_x/Si wafer sensitivity drift

Study the Characteristics of Titanium Oxide Hydrogen Ion Sensor Using XRD and AES

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稀有金属材料与工程 2006年第A03期35卷 250-251页

作者： Jung-chuan chou Hung-Hsi Yang Graduate School of Electronic Engineering National Yunlin University of Science and TechnologyDouliouTaiwan 640China

We study the extended gate ion sensitive structure,and deposit the titanium oxide (TiO_2) thin film on p-type (100) silicon *** device of the hydrogen ion sensing structure is TiO_2/Si-substrate,and a commercial device of the metal oxide semiconductor field effect transistor (MOSFET) is connected to the separative sensing *** sensitivity and linearity are measured under different work *** the mixed ratio of Ar/O_2 is 80 ml·min^(-1)/20 ml·min^(-1),the work pressure is 4 Pa,the sputtering power is 150 W,and the sputtering time is two hours,the better sensing properties of the sensitivity and linearity are 36.49 mV/pH and 0.99654,***,some instruments are analyzed the surface of TiO_2 membrane,such as X-ray diffraction (XRD) and Auger Electron Spectrometer (AES).The characteristics of TiO_2 thin film can be demonstrated.

关键词： titanium oxide separative sensing device sensitivity linearity X-ray diffraction auger electron spectrometer

Study on the High Conductive Polymer as the Miniaturized Reference Electrode

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稀有金属材料与工程 2006年第A03期35卷 254-255页

作者： Jung-chuan chou Chien-Cheng Chen Department of Electronic Engineering National Yunlin University of Science and TechnologyDouliouTaiwan 640China

The polypyrrole is the high conductive polymer which was coated onto indium tin oxide (ITO) glass substrate by electroplated technique to fabricate a miniaturized reference ***,the morphology of the ITO glass reference electrode electroplated with pyrrole has been studied through the instrumental analysis utilizing cyclic voltammetry (CV). Furthermore,the sensing characteristics of the reference electrode have been measured by using commercial instrumental amplifier as the readout *** the high conductive polymer as miniaturized reference electrode has many advantages such as easy fabrication of coating polymer,without any expensive fabricating equipment,easy carry by the miniaturized ***,it is suitable for the reference electrode production.

关键词： miniaturized reference electrode polypyrrole conductive polymer cyclic voltammetry

Calibration of the Circuit Measurement for the Glucose Sensor

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稀有金属材料与工程 2006年第A03期35卷 337-338页

作者： Jung-chuan chou Sung-Chih Chen Department of Electronic Engineering National Yunlin University of Science and TechnologyDouliouTaiwan 640China

The extended gate field effect transistor (EGFET)has many advantages such as the fabrication is easy,low cost, easy to operate *** EGFET was applied to biosensor in recent *** this study,the tin oxide (SnO_2)pH sensitive membrane was deposited on ITO glass,when the surface voltage which pH membrane changes,the gate voltage and current channel of MOSFET will change immediately to detect concentration of the glucose *** this study we have devoted to research about the calibration of the circuit measurement for the glucose sensor,and study the calibration system of the drift and hysteresis.

关键词： glucose sensor extended gate field effect transistor(EGFET) SnO2/ITO glass drift hysteresis

Study of Reducing Non-Ideal Effects Based on TiN Sensitive Electrode with Front-End Offset Circuit

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稀有金属材料与工程 2006年第A03期35卷 248-249页

作者： Jung-chuan chou Cheng-Hsin Liu Graduate School of Electronic Engineering National Yunlin University of Science and TechnologyDouliouTaiwan 640China

The structure of the extended gate ion sensitive field effect transistor (EGISFET) is similar to the structure of the ion sensitive field effect transistor (ISFET).Moreover,the non-ideal effect of EGISFET is the main impediment to development of commercial processes for sensitive *** is necessary to promote the stability and reliability of the devices by employing calibration circuits and the better fabrication *** temporal drift exists in the entire measurement experiment. Furthermore,in this study we can reduce the temporal drift effect which influences the stability of the TiN sensitive electrode with the differential front-end offset *** measurement system combines with shifting circuit,differential and instrument *** employ the calibration circuit to compare with the variations of the output voltage,and expectably improve the stability and reliability of the TiN sensitive electrode by the novel calibration circuit.

关键词： TiN sensitive electrode stability reliability temporal drift effect front-end offset circuit