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Derivation of Lower Critical Magnetic Field for Anisotropic Ginzburg-Landau Model in Superconductivity

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Acta Mathematica Sinica,English Series 2011年第5期27卷 953-982页

作者： Yan Lei KOU shi jin ding Department of Mathematics South China Normal University Guangzhou 510631 P. R. China

In this paper, the authors discuss the vortex structure of an anisotropic Ginzburg-Landau model for superconducting thin film proposed by Du. We obtain the estimate for the lower critical magnetic field Hc1 which is the first critical value of hex corresponding to the first phase transition in which vortices appear in the superconductor. We also find local minimizers of the anisotropic superconducting thin film with a large parameter k, and for the applied magnetic field near the critical field we discuss the asymptotic behavior of the local minimizers.

关键词： Critical magnetic field anisotropic Ginzburg-Landau model vortices

Robin Boundary Value Problem for One-Dimensional Landau–Lifshitz Equations

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Acta Mathematica Sinica,English Series 2012年第10期28卷 2033-2066页

作者： shi jin ding jin Rui HUANG Xiao E LIU School of Mathematical Sciences South China Normal University

In this paper, we are concerned with the existence and uniqueness of global smooth solu- tion for the Robin boundary value problem of Landau Lifshitz equations in one dimension when the boundary value depends on time t. Yhrthermore, by viscosity vanishing approach, we get the existence and uniqueness of the problem without Gilbert damping term when the boundary value is independent of t.

关键词： Landau-Lifshitz equation Robin boundary value problem existence uniqueness smooth solution.

Atomic layer deposited 2D MoS2 atomic crystals:From material to circuit

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Nano Research 2020年第6期13卷 1644-1650页

作者： Hao Liu Lin Chen Hao Zhu Qing-Qing Sun shi-jin ding Peng Zhou David Wei Zhang State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai200433China

Atomic layer deposition(ALD)can be used for wafer-scale synthesis of 2D *** this paper,a novel,reliable,secure,low-cost,and high-efficiency process for the fabrication of MoS2 is introduced and *** resulting 2D materials show high carrier-mobility as well as excellent electrical *** molybdenum pentachloride(MoCl5)and hexamethyldisilathiane(HMDST)as ALD precursors,thickness-controlled MoS2 films are uniformly deposited on a 50 mm sapphire and a 100 mm silica *** is done with a high growth-rate(up to 0.90Å/cycle).Large-scale top-gated FET arrays are fabricated using the films,with a room-temperature mobility of 0.56 cm2/(V·s)and a high on/off current ratio of *** electrical uniformity is observed in the whole sapphire ***,logical circuits,including inverters,NAND,AND,NOR,and OR gates,are realized successfully with a high-k HfO2 dielectric *** inverters exhibit a fast response frequency of 50 Hz and a DC-voltage gain of 4 at VDD=4 *** results indicate that the new method has the potential to synthesize high quality MoS2 films on a large-scale,with hypo-toxicity and enhanced efficiency,which can facilitate a broader range of applications in the future.

关键词： atomic layer deposition molybdenum disulfide electrical uniformity field effect transistors logical circuits

High performance 2T0C DRAM cells based on atomic-layer-deposited InAlZnO FETs

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Science China(Information Sciences) 2024年第9期67卷 344-345页

作者： Wen XIONG Binbin LUO Wei MENG Bao ZHU Xiaohan WU shi-jin ding School of Microelectronics Fudan University

Recently, the oxide semiconductor-based 2T0C dynamic random-access memory(DRAM) has shown great potential in monolithic three-dimensional(M3D)-integrated memory,owing to some unique advantages of oxide semiconductors,such as high electron mobility, wide band gap, and compatibility with back-end-of-line(BEOL) processes [1, 2].

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Forming-free flexible memristor with multilevel storage for neuromorphic computing by full PVD technique

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Journal of Materials Science & Technology 2021年第1期60卷 21-26页

作者： Tian-Yu Wang Jia-Lin Meng Qing-Xuan Li Lin Chen Hao Zhu Qing-Qing Sun shi-jin ding David Wei Zhang State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China

Flexible resistive random access memory(RRAM) has shown great potential in wearable *** tunable multilevel resistance states,flexible memristors could be used to mimic the bio-synapses for constructing high-efficient wearable neuromorphic computing ***,the flexible substrate has intrinsic disadvantages including low-tempe rature tolerance and poor complementary metal-oxidesemiconductor(CMOS) compatibility,which limit the development of flexible *** physical vapor deposition(PVD) fabrication process could prepare RRAM without requirement of further treatment,which greatly simplified preparation steps and reduced the production *** the other hand,forming process,as a common pre-programing operation in RRAM,increases the energy consumption and limits the application scenarios of ***,a NiO-based forming-free RRAM with low set voltage was fabricated via full PVD *** flexible device exhibited reliable re sistive switching characteristics under flat state even compre s sive and tensile states(R=10 mm).The tunable multilevel resistance states(5 levels) could be obtained by controlling the compliance ***,synaptic plasticities also were verified in this *** flexible NiO-based RRAM shows great potential in wearable forming-free multibit memo ry and neuromorphic computing electronics.

关键词： Full PVD process Flexible memristor Forming-free Multilevel storage Neuromorphic application

Spectrum projection with a bandgap-gradient perovskite cell for colour perception

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Light(Science & Applications) 2020年第1期9卷 466-478页

作者： Mei-Na Zhang Xiaohan Wu Antoine Riaud Xiao-Lin Wang Fengxian Xie Wen-Jun Liu Yongfeng Mei David Wei Zhang shi-jin ding State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China Engineering Research Centre of Advanced Lighting Technology Ministry of EducationFudan UniversityShanghai 200433China Department of Materials Science Fudan UniversityShanghai 200433China

Optoelectronic devices for light or spectral signal detection are desired for use in a wide range of applications,including sensing,imaging,optical communications,and in situ ***,existing photodetectors indicate only light intensities,whereas multiphotosensor spectrometers require at least a chip-level assembly and can generate redundant signals for applications that do not need detailed spectral *** by human visual and psychological light perceptions,the compression of spectral information into representative intensities and colours may simplify spectrum processing at the device ***,we propose a concept of spectrum projection using a bandgap-gradient semiconductor cell for intensity and colour ***-gradient perovskites,prepared by a halide-exchanging method via dipping in a solution,are developed as the photoactive layer of the *** fabricated cell produces two output signals:one shows linear responses to both photon energy and flux,while the other depends on only photon ***,by combining the two signals,the single device can project the monochromatic and broadband spectra into the total photon fluxes and average photon energies(i.e.,intensities and hues),which are in good agreement with those obtained from a commercial photodetector and *** changing illumination in real time,the prepared device can instantaneously provide intensity and hue *** addition,the flexibility and chemical/bio-sensing of the device via colour comparison are ***,this work shows a human visual-like method of spectrum projection and colour perception based on a single device,providing a paradigm for high-efficiency spectrum-processing applications.

关键词： projection perovskite gradient

Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels

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Chinese Physics B 2020年第7期29卷 588-595页

作者： Mei-Na Zhang Yan Shao Xiao-Lin Wang Xiaohan Wu Wen-Jun Liu shi-jin ding State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China Center for Information Photonics and Energy Materials Shenzhen Institutes of Advanced TechnologyChinese Academy of SciencesShenzhen 518055China

Photodetectors based on amorphous InGaZnO(a-IGZO)thin film transistor(TFT)and halide perovskites have attracted attention in recent ***,such a stack assembly of a halide perovskite layer/an a-IGZO channel,even with an organic semiconductor film inserted between them,easily has a very limited *** this article,we investigate photoresponsive characteristics of TFTs by using CsPbX3(X=Br or I)quantum dots(QDs)embedded into the a-IGZO channel,and attain a high photoresponsivity over 10^3A·W^-1,an excellent detectivity in the order of 10^16 Jones,and a light-to-dark current ratio up to 10^5 under visible *** should be mainly attributed to the improved transfer efficiency of photoelectrons from the QDs to the a-IGZO ***,spectrally selective photodetection is demonstrated by introducing halide perovskite QDs with different ***,this work provides a novel strategy of device structure optimization for significantly improving the photoresponsive characteristics of TFT photodetectors.

关键词： perovskite quantum dots a-IGZO thin-film transistor photoresponsive characteristics

Band Alignment at the Al2O3/β-Ga2O3 Interface with CHF3 Treatment

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Chinese Physics Letters 2020年第7期37卷 92-95页

作者： Hao Liu Wen-Jun Liu Yi-Fan Xiao Chao-Chao Liu Xiao-Han Wu and shi-jin ding State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China

The energy band alignment at the atomic layer deposited Al2O3/β-Ga2O3 interface with CHF3 treatment was characterized by x-ray photoelectron spectroscopy and secondary ion mass spectrometry(SIMS).With additional CHF3 plasma treatment,the conduction band offset increases from 1.95±0.1 eV to 2.32±0.1 eV;and the valence band offset decreases from 0.21±0.1 eV to-0.16±0.1 *** a result,the energy band alignment changes from type I to type *** energy band alignment transition could be attributed to the downshift of the core-level of Ga 3d,resulting from the Ga–F bond formation in the F-rich interfacial layer,which is confirmed by the SIMS results.

关键词： CHF3 SIMS treatment

Flexible 3D memristor array for binary storage and multi-states neuromorphic computing applications

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InfoMat 2021年第2期3卷 212-221页

作者： Tian-Yu Wang Jia-Lin Meng Lin Chen Hao Zhu Qing-Qing Sun shi-jin ding Wen-Zhong Bao David Wei Zhang State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghaiChina

The demand of flexible neuromorphic computing electronics is increasing with the rapid development of wearable artificial intelligent *** flexible resistive random-access memory(RRAM)is one excellent candidate of highdensity storage ***,due to the limitations of fabrication process,materials system and device structure,it is difficult to prepare flexible 3D highdensity network for neuromorphic *** this paper,a 3D flexible memristors network is developed via low-temperature atomic layer deposition(ALD)at 130C,with potential of extending to various flexible *** typical bipolar switching characteristics are verified in RRAM units of 3D network,including first,second and third *** binary storage,the multibit storage in single unit is demonstrated and the storage density is further *** a connection link between binary storage and brain-inspired neuromorphic computing,the multibit storage capability paves the way for the tunable synaptic plasticity,for example,long-term potentiation/depression(LTP/LTD).The 3D memristors network successfully mimicked the typical neuromorphic functionality and realized ultra-multi conductance states modulation under 600 *** robust mechanical flexibility is further demonstrated via LTP/LTD emulation under bending states(radius=10 mm).The 3D flexible memristors network shows significant potential of applications in high-performance,high-density and reliable wearable neuromorphic computing system.

关键词： 3D crossbar brain-inspired computing flexible memory low-temperature ALD multilevel storage