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海洋贝瓷的工艺与创新研究

中国陶瓷工业 2025年第1期32卷 80-86页

作者：黄茹天津商业大学艺术学院天津300134

海洋贝瓷又被称为“海瓷”或“贝瓷”,是将废弃的贝壳经过创新的工艺转化,制成的一种新颖的陶瓷品种。“海瓷”的出现进一步丰富了我国陶瓷文化,也为中国手工艺创新之路注入了新的活力。“海瓷”制作流程复杂,生产工艺考究,产品温润、剔... 详细信息

海洋贝瓷又被称为“海瓷”或“贝瓷”,是将废弃的贝壳经过创新的工艺转化,制成的一种新颖的陶瓷品种。“海瓷”的出现进一步丰富了我国陶瓷文化,也为中国手工艺创新之路注入了新的活力。“海瓷”制作流程复杂,生产工艺考究,产品温润、剔透,具有独特的审美意境和文化价值。本文从“海瓷”的起源发展、制作工艺、艺术特点、文化价值与技术创新等方面进行深入探究,揭示这一新型陶瓷的魅力,实现以科技创新引领“海瓷”产业创新发展的模式。

关键词：海瓷制作工艺艺术特点文化价值技术创新

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Vertical SnS2/Si heterostructure for tunnel diodes

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Science China(Information Sciences) 2020年第2期63卷 189-195页

作者： rundong JIA Qianqian huang ru huang Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University

Tunneling FET（TFET） is considered as one of the most promising low-power electronic devices,however, suffers from the low drive current. Heterostructure TFET with low effective tunnel barrier height based on traditional 3D materials can obtain large tunnel current but deteriorated off-state current induced by the lattice mismatch. van der Waals heterostructure TFET based on 2D materials can obtain danglingbond-free interface for suppressed off-state current but face the challenge of controllable and stable doping technology. As the critical building block of the TFET, tunnel diode based on the 2D/3D heterostructure is proposed in this study and experimentally demonstrated. Combination of the pristine interface of 2D materials and matured doping technology in the traditional 3D bulk materials, tunnel diodes based on the 2D/3D heterostructures are expected to realize low leakage current and high on current simultaneously,showing great potential in low-power electronics. The N+SnS2/P+Si heterostructure with effective tunnel barrier of 0.17 eV theoretically is considered for the first time and selected as the optimal material platform for tunnel diodes. The N+SnS2/P+Si tunnel diode demonstrated experimentally shows the high current density of 1 μA/μm2, which is the highest one among the reported tunnel diodes based on the 2D/group IV materials. The tunneling current is also confirmed by low-temperature measurements. This study shows the great potential of the 2D/3D heterostructure for low-power tunneling devices.

关键词： 2D/3D heterostructure SnS2/Si tunnel barrier tunnel diode energy-efficient

A novel negative quantum capacitance field-effect transistor with molybdenum disulfide integrated gate stack and steep subthreshold swing for ultra-low power applications

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Science China(Information Sciences) 2023年第6期66卷 71-77页

作者： Liang CHEN Huimin WANG Qianqian huang ru huang School of Integrated Circuits Peking University Beijing Advanced Innovation Center for Integrated Circuits

Various steep-slope devices based on novel structures and mechanisms garnered considerable attention for their potential in ultra-low power logic applications. In this work, a novel steep-slope negative quantum capacitance field-effect transistor（NQCFET）with molybdenum disulfide（MoS2）-integrated gate stack was realized by theoretical analysis and experimental evaluation. By combining the MoS+2 equivalent capacitance model calibrated with experimental results, the NQCFET device model is further *** results demonstrated that the optimized MoS2-integrated NQCFET can achieve a subthreshold swing（SS）of sub-60 mV/dec over a current range of 5 decades, with the minimum SS reaching 29 mV/dec,indicating the remarkable potential of MoS2-integrated NQCFETs for ultra-low power applications.

关键词： negative quantum capacitance molybdenum disulfide field-effect transistor subthreshold swing ultra-low power device

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Urban Hierarchy of Innovation Capability and Inter-city Linkages of Knowledge in Post-reform China

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Chinese Geographical Science 2012年第5期22卷 602-616页

作者： LU Lachang huang ru College of Resource Environment and Tourism Capital Normal UniversityBeijing 100048China School of Geographical Science Guangzhou UniversityGuangzhou 510006China

The 2000s has witnessed increasing interests in cities′role of innovation in the era of knowledge-based *** with substantial empirical analysis on the world city hierarchy of innovation,this paper attempts to examine the national urban hierarchy of innovation capability in China,in terms of ranking systems,spatial pattern and inter-city linkages of knowledge during the post-reform period since the late *** on quantitative analysis such as principal component factor analysis and clustering analysis,this paper identifies the five-tier hierarchy of in-novation,which is headed by Beijing and Shanghai,followed by the capital cities of each province and regional centre *** development of China′s urban hierarchy of innovation capability has been driven by such factors as the scale of innovation,scientific scale,innovation potential and innovation *** paper further investigates the inter-city linkages of knowledge measured by the number of co-authored papers among the *** is positioned in the central position of the knowledge diffusion and knowledge cooperation *** knowledge diffusion among high level cities has occurred than that among the low level cities as well as between the low level cities and high level cities,and provincial capital cities and the regional central cities.

关键词： urban hierarchy innovation capability inter-city linkages of knowledge Chinese cities

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A novel tunnel FET design through hybrid modulation with optimized subthreshold characteristics and high drive capability

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Science China(Information Sciences) 2020年第2期63卷 245-247页

作者： Yang ZHAO Qianqian huang ru huang Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University National Key Laboratory of Science and Technology on Micro/Nano Fabrication Peking University

Dear editor,As CMOS technology scaling down, the reduction of supply voltage and power consumption becomes extremely difficult due to the subthreshold swing(SS) limitation (60 m V/dec) at room *** FET (TFET) with band-to-band tunneling (BTBT) mechanism is regarded as one of the most promising emerging low-power devices due to its sub-60 m V/dec SS and ultra-low off-current

关键词： A novel tunnel FET design through hybrid modulation with optimized subthreshold characteristics and high drive capability FET

Memristive dynamics enabled neuromorphic computing systems

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Science China(Information Sciences) 2023年第10期66卷 5-19页

作者： Bonan YAN Yuchao YANG ru huang Center for Brain Inspired Chips Institute for Artificial Intelligence Peking University Beijing Advanced Innovation Center for Integrated Circuits School of Integrated Circuits Peking University School of Electronic and Computer Engineering Peking University Center for Brain Inspired Intelligence Chinese Institute for Brain Research(CIBR)

The slowing down of transistor scaling and explosive growth for intelligence computing power emerge as the two driving factors for the study of novel devices and materials to pursue highly-efficient computing systems. Memristors, incorporating rich intrinsic dynamics, are a promising candidate for constructing efficient and scalable bio-inspired computing systems. In this progress report, we review the latest advances in novel types of memristors as well as their applications in implementing neuromorphic computing systems. This paper not only covers the memristive dynamics-enabled bionic computing systems but also discusses the memristive sensory systems that integrate sensing and computing. Eventually, device-circuit co-optimization methods are given to emphasize the trend of cross-layer co-design in this fast-evolving *** innovation in memristor devices mainly focuses on specialized computing hardware and yields superior computing and sensing efficiency. At last, we offer our insight into the trend of state-of-the-art research in memristive materials, devices, circuits, and systems.

关键词： memrsitor memristive dynamics artificial synapse artificial neuron neuromorphic computing

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黄茹作品

中国陶瓷 2025年第2期61卷 86-86页

作者：黄茄天津商业大学艺术学院

Analytical current model of tunneling field-effect transistor considering the impacts of both gate and drain voltages on tunneling

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Science China(Information Sciences) 2015年第2期58卷 174-181页

作者： WANG Chao WU ChunLei WANG JiaXin huang QianQian huang ru Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University

In this paper, a closed-form current model for bulk tunneling field-effect transistor(TFET) is put forward. Based on the operation mechanism, the channel surface potential φsf which involves the impact of both the gate and the drain voltages is established for the first time. In addition, a new calculation method for the dynamic tunneling width, which is the critical parameter for the TFET modeling, is derived from the surface potential. The surface-potential-based current model is established which is in a good agreement with TCAD simulation results.

关键词： tunneling field-effect transistor current model surface potential drain voltage tunneling width

Complementary tunneling transistors based on WSe2/SnS2 van der Waals heterostructure

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Science China(Information Sciences) 2020年第4期63卷 245-247页

作者： rundong JIA Liang CHEN Qianqian huang ru huang Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University

Dear editor,Two-dimensional (2D) semiconductors have emerged as one of the most promising material candidates for next-generation electronic devices [1].Owing to the broad range of bandgap diversity and the pristine i... 详细信息

关键词： Complementary tunneling transistors based on WSe2/SnS2 van der Waals heterostructure VDS