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Structure and reaction dynamics of SHE Z = 130

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Chinese Physics C 2019年第10期43卷 78-85页

作者： r.r.swain B.B.Sahu Department of Physics School of Applied Sciences KIIT Deemed to be University

This study investigates the structural properties of super-heavy nuclei with Z=130 by adopting the relativistic mean-field (rMF) theory within an axially deformed oscillator basis with the NL3 force parameter set. We study the binding energies, quadrupole deformation, nuclear.r.dii, neutron separation energies, and other bulk properties. Moreover, we analyze the favorable decay modes for clear cognitive content of nuclei, such as alpha decay, using different formulae including the Viola-Seaberg, analytical formula of royer, universal curve formula, and universal decay law. We compare these with the corresponding fission process. The spontaneous fission of super-heavy nuclei is studied with Z=130 within the mass region 310≤A≤340. The results exhibit good agreement with finite range droplet model (FrDM) data. This formalism presents a significant step forward in the study of the structure and decay modes of the isotopes of Z=130. With this appraisal, we investigate the possible shell/sub-shell closure for super-heavy nuclei adjacent by decay chains of alpha and other.r.dioactive decay particles.

关键词： relativistic mean field nuclear bulk properties alpha decay

Impact of barrier thickness on gate capacitance—modeling and comparative analysis of GaN based MOSHEMTs

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Journal of Semiconductors 2015年第3期36卷 60-64页

作者： Kanjalochan Jena raghunandan swain T.r.Lenka Department of Electronics and Communication Engineering National Institute of Technology Silchar

A mathematical model is developed predicting the behavior of gate capacitance with the nanoscale variation of barrier thickness in AlN/GaN MOSHEMT and its effect on gate capacitances of AIInN/GaN and AlGaN/GaN MOSHEMTs through TCAD simulations is compared analytically. AlN/GaN and AIInN/GaN MOSHEMTs have an advantage of a significant decrease in gate capacitance up to 108 fF/μm^2 with an increase in barrier thickness up to 10 nm as compared to conventional AlGaN/GaN MOSHEMT. This decrease in gate capacitance leads to improved rF performance and hence reduced propagation delay.

关键词： 2DEG GaN MOSHEMT quantum capacitance TCAD

Scattering and fusion reaction dynamics of O+Zr system around Coulomb barrier

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Chinese Physics C 2022年第12期46卷 241-248页

作者： C.Dash r.r.swain G.Tripathy I.Naik B.B.Sahu Department of physics MSCBD UniversityBaripada 757003India School of Applied Sciences KIIT Deemed to be UniversityBhubaneswar 751024India

A partial wave scattering matrix for the total effective complex potential of nucleus nucleus collisions is proposed to easily analyze the angular variations of elastic scattering and fusion cross-sections simultaneously with a unique *** expectation value of the imaginary part of the potential calculated using the distorted waves from the full potential in the elastic channel accounts for σ_(r).This is equated to the sum of the cross-sections due to absorption in different regions of the potential where the imaginary part is actively *** potential is taken as energy independent and features a weakly absorbing nature,which supports the resonance states in various partial wave ***,these resonances show oscillatory behavior changes with respect to energy D(E_(c.m.))=d^(2)(E_(c.m.)σ_(fus))/dE_(c.m.)^(2).In this paper,we discuss elastic scattering and fusion cross-sections in conjunction with the results of D(E_(c.m.))for the^(16)+^(92)Zr system.

关键词： elastic scattering fusion cross-section barrier distribution

Modeling on oxide dependent 2DEG sheet charge density and threshold voltage in AlGaN/GaN MOSHEMT

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Journal of Semiconductors 2016年第4期37卷 44-49页

作者： J.Panda K.Jena r.swain T.r.Lenka Microelectronics and VLSI Design Group Department of Electronics and Communication Engineering National Institute of Technology Silchar

We have developed a physics based analytical model for the calculation of threshold voltage, two dimensional electron gas（2DEG） density and surface potential for Al Ga N/Ga N metal oxide semiconductor high electron mobility transistors（MOSHEMT）. The developed model includes important parameters like polarization charge density at oxide/Al Ga N and Al Ga N/Ga N interfaces, interfacial defect oxide charges and donor charges at the surface of the Al Ga N barrier. The effects of two different gate oxides（Al_2O_3 and HfO_2/ are compared for the performance evaluation of the proposed MOSHEMT. The MOSHEMTs with Al_2O_3 dielectric have an advantage of significant increase in 2DEG up to 1.2 10^（13） cm^2 with an increase in oxide thickness up to 10 nm as compared to HfO_2 dielectric MOSHEMT. The surface potential for HfO_2 based device decreases from 2 to –1.6 e V within10 nm of oxide thickness whereas for the Al_2O_3 based device a sharp transition of surface potential occurs from 2.8to –8.3 e V. The variation in oxide thickness and gate metal work function of the proposed MOSHEMT shifts the threshold voltage from negative to positive realizing the enhanced mode operation. Further to validate the model,the device is simulated in Silvaco Technology Computer Aided Design（TCAD） showing good agreement with the proposed model results. The accuracy of the developed calculations of the proposed model can be used to develop a complete physics based 2DEG sheet charge density and threshold voltage model for Ga N MOSHEMT devices for performance analysis.

关键词： 2DEG AlGaN GaN heterojunction MOSHEMT trap capacitance

Analysis of morphological,structural and electrical properties of annealed TiO2 nanowires deposited by GLAD technique

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Journal of Semiconductors 2017年第5期38卷 4-10页

作者： B.Shougaijam r.swain C.Ngangbam T.r.Lenka Microelectronics & VLSI Design Group Department of ECE National Institute of Technology Silchar Assam 788010 India Department of Electronics Engineering Parala Maharaja Engineering College Berhampur 761003 Odisha India Department of ECE National Institute of Technology Manipur 795004 India

The effect of annealing on vertically aligned TiO2 NWs deposited by glancing angle deposition（GLAD）method on Si substrate using pressed and sintered TiO2 pellets as source material is *** FE-SEM images reveal the retention of vertically aligned NWs on Si substrate after annealing *** EDS analysis of TiO2NWs sample annealed at 600 ℃ in air for 1 h shows the higher weight percentage ratio of ～2.6（i.e.,72.27%oxygen and 27.73%titanium）.The XrD pattern reveals that the polycrystalline nature of anatase TiO2 dominates the annealed NWs *** electrical characteristics of Al/TiO2-NWs/TiO2-TF/p-Si（NW device） and Al/TiO2-TF/p-Si（TF device） based on annealed samples are *** is riveting to observe a lower leakage current of ～1.32 × 10^-7 A/cm^2 at ＋1 V with interface trap density of-6.71 × 10^11eV^-1cm^-2 in NW device compared to ～2.23 × 10^-2 A/cm^2 in TF *** dominant leakage mechanism is investigated to be generally Schottky emission;however Poole-Frenkel emission also takes place during high reverse bias beyond 4 V for NWs and 3 V for TF device.

关键词： annealing GLAD morphology nanowires structural TiO2

Low noise wide bandgap SiC based IMPATT diodes at sub-millimeter wave frequencies and at high temperature

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Journal of Semiconductors 2014年第3期35卷 50-55页

作者： J.Pradhan S.r.Pattanaik S.K.swain G.N.Dash School of Physics Sambalpur University Jyoti Vihar Burla Sambalpur Odisha 767019 India Apex Institute of Technology and Management Bhubaneswar Odisha 752101 India

We have presented a comparative account of the high frequency prospective as well as noise behaviors of wide-bandgap 4H-SiC and 6H-SiC based on different structures of IMPATT diodes at sub-millimeter-wave frequencies up to 2.18 THz. The computer simulation study establishes the feasibility of the SiC based IMPATT diode as a high power density terahertz source. The most significant feature lies in the noise behavior of the SiC IMPATT diodes. It is noticed that the 6H-SiC DDr diode shows the least noise measure of 26.1 dB as compared to that of other structures. Further, it is noticed that the noise measure of the SiC IMPATT diode is less at a higher operating frequency compared to that at a lower operating frequency.

关键词： IMPATT silicon carbide terahertz(THz) science

Morphological and molecular evidence supports the first occurrence of two fishes, Siganus sutor(Valenciennes, 1835)and Seriolina nigrofasciata(rüppell, 1829)(Actinopterygii:Perciformes), from marine waters of Odisha coast, Bay of Bengal, India

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Acta Oceanologica Sinica 2020年第6期39卷 26-35页

作者： Tapan K.Barik Surya N.swain Bijayalaxmi Sahu Bibarani Tripathy Usha r.Acharya Post Graduate Department of Zoology Berhampur UniversityBerhampur 760007OdishaIndia

Marine ecosystems provide a wide variety of diverse habitats that frequently promote migration and ecological *** extent to which the geographic distribution of marine organism has reshaped by human activities remains *** limitations intrinsic to morphology-based identification systems have engendered an urgent need for.r.liable genetic methods that enable the unequivocal recognition of fish species,particularly those that are prone to overexploitation and/or market *** the present study,however,an attempt has been taken to identify two locally adapted fish species,Siganus sutor(Valenciennes,1835)and Seriolina nigrofasciata(rüppell,1829)of order Perciformes,which happens to be the first record in Odisha coast,Bay of *** diagnostic characteristics of Siganus sutor are:dorsal fin XIII-10,anal fin VII-9,pectoral fin 15,pelvic fin II-3,while that of Seriolina nigrofasciata dorsal fin VI-I-35,anal fin I-17,pectoral fin 16,pelvic fin *** COI barcodes generated in this study were matched with reference sequences of expected species,according to morphological *** and likelihood phylogenetic trees were drawn based on DNA barcodes and all the specimens clustered in agreement with their taxonomic classification at the species *** phylogeographic studies based on haplotype network and migration rates suggest that both the species were not panmitic and the high-frequency population distribution indicates successful *** result of this study provides an important validation of the use of DNA barcode sequences for monitoring species diversity and changes within a complex marine ecosystem.

关键词： Siganus sutor Seriolina nigrofasciata morphological characteristics DNA Barcoding

A sensitivity analysis of millimeter wave characteristics of SiC IMPATT diodes

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Journal of Semiconductors 2017年第6期38卷 58-65页

作者： S K swain J Pradhan G N Dash S r Pattanaik School of Physics Sambalpur University Sambalpur Odisha 767019 India College of Engineering Bhubaneswar Bhubaneswar Odisha 751024 India National Institute of Science and Technology Berhampur Odisha 761008 India

Ionization rate coefficients and saturation drift velocities for electrons and holes are the vital material parameters in determining the performance of an IMPATT *** have performed a sensitivity analysis of the millimeter wave characteristics of 4H-SiC and 6H-SiC IMPATT diodes with reference to the above mentioned material data and an operating frequency of 220 *** effect of a small variation in the ionization rate and drift velocity on the device characteristics like break down voltage,efficiency,noise measure and power output has been presented here.

关键词： IMPATT SiC ionization rate saturation drift velocity, millimeter wave

Steganography based on quotient value differencing and pixel value correlation

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CAAI Transactions on Intelligence Technology 2021年第4期6卷 504-519页

作者： reshma Sonar Gandharba swain Department of Computer Science and Engjneetttig Koneru Lakshtnaiah Education FoundationGunturAndhra PradeshIndia

Pixel value differencing(PVD)steganography techniques produce imperceptible *** PVD-based techniques have a fkll-off boundary problem(FOBP).To avoid FOB£a steganographic scheme is presented that combines the quotient value difference(QVD)with pixel value correlation(PVC).It performs data embedding in two stages on 3 x 3 size pixel *** first stage of the embedding procedure performs QVD and remainder substitution on five *** five pixels are central pixel and it*s neighbours on the left,right,upper,and lower *** on the new values of these five pixels,the PVC embedding procedure is applied on the remaining four corner pixels of the *** experimental results are found to be *** hiding capacity is high that is 3.92 bits per byte with an acceptable peak signal-to-noise ratio value.A security check was performed using two tests:(i)a regular-singular.r.)test,(ii)a pixel difference histogram(PDH)*** experimental outcomes demonstrate that PDH curves of the stego-images do not have a zigzag shape,that means the PDH test could not detect this steganography ***,the rS curves show that the rS test could not detect this steganography technique.

关键词： technique. PDH value