Analysis of morphological,structural and electrical properties of annealed TiO2 nanowires deposited by GLAD technique

作     者：B.Shougaijam R.Swain C.Ngangbam T.R.Lenka 

作者机构：Microelectronics & VLSI Design Group Department of ECE National Institute of Technology Silchar Assam 788010 India Department of Electronics Engineering Parala Maharaja Engineering College Berhampur 761003 Odisha India Department of ECE National Institute of Technology Manipur 795004 India 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2017年第38卷第5期

页      面：4-10页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：annealing GLAD morphology nanowires structural TiO2 

摘      要：The effect of annealing on vertically aligned TiO2 NWs deposited by glancing angle deposition（GLAD）method on Si substrate using pressed and sintered TiO2 pellets as source material is *** FE-SEM images reveal the retention of vertically aligned NWs on Si substrate after annealing *** EDS analysis of TiO2NWs sample annealed at 600 ℃ in air for 1 h shows the higher weight percentage ratio of ～2.6（i.e.,72.27%oxygen and 27.73%titanium）.The XRD pattern reveals that the polycrystalline nature of anatase TiO2 dominates the annealed NWs *** electrical characteristics of Al/TiO2-NWs/TiO2-TF/p-Si（NW device） and Al/TiO2-TF/p-Si（TF device） based on annealed samples are *** is riveting to observe a lower leakage current of ～1.32 × 10^-7 A/cm^2 at ＋1 V with interface trap density of-6.71 × 10^11eV^-1cm^-2 in NW device compared to ～2.23 × 10^-2 A/cm^2 in TF *** dominant leakage mechanism is investigated to be generally Schottky emission;however Poole-Frenkel emission also takes place during high reverse bias beyond 4 V for NWs and 3 V for TF device.