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Transient performance estimation of charge plasma based negative capacitance junctionless tunnel FET

Journal of Semiconductors 2016年第2期37卷 66-70页

作者： sangeeta singh p.n.kondekar pawan.pal Department of Electronics and Communication Engineering PDPM-Indian Institute of Information TechnologyDesign and Manufacturing(IIITDM)Jabalpur JabalpurMPIndia

We investigate the transient behavior of an n-type double gate negative capacitance junctionless tun- nel field effect transistor （NC-JLTFET）. The structure is realized by using the work-function engineering of metal electrodes over a heavily doped n＋ silicon channel and a ferroelectric gate stack to get negative capacitance be- havior. The positive feedback in the electric dipoles of ferroelectric materials results in applied gate bias boosting. Various device transient parameters viz. transconductance, output resistance, output conductance, intrinsic gain, intrinsic gate delay, transconductance generation factor and unity gain frequency are analyzed using ac analysis of the device. To study the impact of the work-function variation of control and source gate on device performance, sensitivity analysis of the device has been carried out by varying these parameters. Simulation study reveals that it preserves inherent advantages of charge-plasma junctionless structure and exhibits improved transient behavior as well.

关键词： negative capacitance intrinsic gain transconductance generation factor intrinsic bias boosting

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The Corpse Is a Silent Witness Who Never Lies—A Case Report

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Forensic Medicine and Anatomy Research 2014年第3期2卷 43-47页

作者： Vijay pal pawan Mittal Jitender K. Jakhar Yogesh Kumar Vashist A. D. Aggarwal Bhavesh Bohra Department of Forensic Medicine Government Medical College Patiala India Department of Forensic Medicine Jhalawar Medical College Jhalawar India Department of Forensic Medicine Pt. B. D. Sharma PGIMS Rohtak Pt. Bhagwat Dayal Sharma University of Health Sciences Rohtak India Department of Forensic Medicine Pt. B. D. Sharma PGIMS Rohtak Pt. Bhagwat Dayal Sharma University of Health Sciences Rohtak India Pt. Bhagwat Dayal Sharma University of Health Sciences Rohtak India

There are two very common sayings about corpse (dead body). The first common saying is that “the corpse is a silent witness who never lies” and the other common saying is that “the dead body is extremely eloquent and honestly informative, if one exercises patience in listening to it.” Both these sayings were proved in one of our cases. In the present case, decomposed body of an unidentified female individual aged about 25 - 26 years was recovered from the bank of western Yamuna canal in Haryana. The police made the efforts for establishing the identity of the deceased but could not succeed. The body was forwarded to the district hospital for autopsy along with the inquest report. However, the body being in advanced stage of decomposition so it was referred from the district hospital to the department of Forensic Medicine, PGIMS, Rohtak (Haryana) for the examination and the expert opinion regarding the cause of death. The findings observed on examination of the body helped to deduce the cause, time and manner of death whereas certain important objective features of identification were also observed and ultimately proper identity of the deceased could be established beyond the reasonable doubt by DNA profile of the samples preserved at autopsy. The autopsy findings, DNA profile and the results of examination of other materials (exhibits) taken from the body not only revealed the truth from the silent witness—the corpse, but also provided objective and scientific evidence to establish the corpus delicti in this case.

关键词： Corpus Delicti Rape Throttling Murder Putrefaction DNA Profile

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Growth and Fabrication of GaN/InGaN Violet Light Emitting Diode on Patterned Sapphire Substrate

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Journal of Applied Mathematics and Physics 2014年第12期2卷 1113-1117页

作者： Sonachand Adhikari Saroj Kanta Patra Ashok Lunia Sandeep Kumar Priyavart Parjapat Bhoopendra Kushwaha pawan Kumar Sumitra Singh Ashok Chauhan Kuldip Singh Suchandan pal C. Dhanavantri CSIR-Network of Institutes for Solar Energy (CSIR-NISE) CSIR-Central Electronics Engineering Research Institute (CSIR-CEERI) Pilani Rajasthan India Academy of Scientific and Innovative Research (AcSIR) Chennai Tamil Nadu India

GaN/InGaN based violet light emitting diodes (LEDs), emitting at 430 nm, have been grown on conventional single side polished (SSP) and patterned sapphire substrates (PSS). Characteristics of the epitaxial wafers and subsequently fabricated LEDs have been analyzed. The photoluminescence (PL) peaks have been observed at 428.1 nm 426.1 nm for the epitaxial layers on SSP and PSS respectively. The PL intensity is 2.9 times higher in the case of PSS. The electroluminescence (EL) peaks have been observed at 430.78 nm and 430.35 nm for the LEDs on SSP and PSS respectively. The light output from LED fabricated on the PSS is 2.15 times higher than that of the LED on SSP at a forward current of 100 mA.

关键词： LED GaN/InGaN PSS

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