Growth and Fabrication of GaN/InGaN Violet Light Emitting Diode on Patterned Sapphire Substrate

作     者：Sonachand Adhikari Saroj Kanta Patra Ashok Lunia Sandeep Kumar Priyavart Parjapat Bhoopendra Kushwaha Pawan Kumar Sumitra Singh Ashok Chauhan Kuldip Singh Suchandan Pal C. Dhanavantri 

作者机构：CSIR-Network of Institutes for Solar Energy (CSIR-NISE) CSIR-Central Electronics Engineering Research Institute (CSIR-CEERI) Pilani Rajasthan India Academy of Scientific and Innovative Research (AcSIR) Chennai Tamil Nadu India 

出 版 物：《Journal of Applied Mathematics and Physics》 (应用数学与应用物理（英文）)

年 卷 期：2014年第2卷第12期

页      面：1113-1117页

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：LED GaN/InGaN PSS 

摘      要：GaN/InGaN based violet light emitting diodes (LEDs), emitting at 430 nm, have been grown on conventional single side polished (SSP) and patterned sapphire substrates (PSS). Characteristics of the epitaxial wafers and subsequently fabricated LEDs have been analyzed. The photoluminescence (PL) peaks have been observed at 428.1 nm 426.1 nm for the epitaxial layers on SSP and PSS respectively. The PL intensity is 2.9 times higher in the case of PSS. The electroluminescence (EL) peaks have been observed at 430.78 nm and 430.35 nm for the LEDs on SSP and PSS respectively. The light output from LED fabricated on the PSS is 2.15 times higher than that of the LED on SSP at a forward current of 100 mA.