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Protecting-Group-Free One-Step Palladium-Catalyzed Coupling on C25 of Cucurbitacin B Expands Chemical Diversity with Improved Cytotoxicity against A549 Cells

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Chinese Journal of Chemistry 2022年第14期40卷 1662-1666,I0002页

作者： ning zhuo Jie Ma Lei Cao Linhai Chen Fajun Nan University of Chinese Academy of Sciences No.19A Yuquan RoadBejing 100049China State Key Laboratory of Drug Research Shanghai Institute of Materia MedicaChinese Academy of SciencesShanghai 201203China School of Chinese Materia Medica Nanjing University of Chinese MedicineNanjingJiangsu 210046China Drug Discovery Shandong Laboratory Bohai Rim Advanced Research Institute for Drug DiscoveryYantaiShandong 264117China

The natural product cucurbitacin B has been widely studied because of its multiple biological activities,especially its potent antitumor ***,modifications of cucurbitacin B are mainly focused on the C2 and C16 site,studies on the C25 acetoxy group are still *** successfully developed a palladium-catalyzed allylic coupling of cucurbitacin B with boronic acids,providing a one-step approach to expand the chemical diversity of the C25 *** method was protecting-group-free,showing a good functional group tolerance and a wide substrate scope under mild reaction conditions.A library of 29 derivatives was prepared,compounds 2q and 2u showed higher cytotoxicity against A549 cells than cucurbitacin B,compounds 2n and 2o maintained potency,and the introduced hydroxyl and amino groups could be further derived.

关键词： Natural products Cucurbitacin B Palladium-catalyzed coupling Divergent synthesis Structure-activity relationships

Quantum cascade superluminescent light emitters with high power and compact structure

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Journal of Semiconductors 2020年第1期41卷 78-82页

作者： Jialin Sun Chuncai Hou Hongmei Chen Jinchuan Zhang ning zhuo Jiqiang ning Changcheng Zheng Zhanguo Wang Fengqi Liu Ziyang Zhang School of Nano Technology and Nano Bionics University of Science and Technology of ChinaHefei 230026China Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China The 718th Research Institute of China Shipbuilding Industry Corporation Handan 056027China Key Laboratory of Nanodevice and Applications Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China Vacuum Interconnected Nanotech Workstation Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China Division of Natural and Applied Sciences Duke Kunshan UniversityKunshan 215316China

Quantum cascade(QC)superluminescent light emitters(SLEs)have emerged as desirable broadband mid-infrared(MIR)light sources for growing number of applications in areas like medical imaging,gas sensing and national ***,it is challenging to obtain a practical high-power device due to the very low efficiency of spontaneous emission in the intersubband transitions in QC *** a design of^5μm SLEs is demonstrated with a two-phonon resonancebased QC active structure coupled with a compact combinatorial waveguide structure which comprises a short straight part adjacent to a tilted stripe and to a J-shaped *** as-fabricated SLEs achieve a high output power of 1.8 mW,exhibiting the potential to be integrated into array devices without taking up too much chip *** results may facilitate the realization of SLE arrays to attain larger output power and pave the pathway towards the practical applications of broadband MIR light sources.

关键词： quantum cascade superluminescent diode mid-wave infrared

Power Deposition of Ion Bernstein Wave Heating on the HT-7 Tokamak

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Chinese Physics Letters 2001年第3期18卷 399-401页

作者： BAO Yi LI Jian-Gang ZHAO Yan-Ping CUI ning-zhuo Institute of Plasma Physics Chinese Academy of SciencesHefei 230031

Efficient direct heating of electrons by ion Bernstein waves has been obtained on the HT-7 ***-axis heating,which is considered to be the result of electron Landau damping,was observed and studied by means of soft x-ray *** measured power deposition was found to be independent of magnetic field through scanning the toroidal field from 1.5 to 1.7 T,in contrast to the ion heating *** is suggested that the electron Landau damping is dominant in this heating regime.

关键词： tokamak Landau Tokamak

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芯片架构对产业演进的影响分析

电信工程技术与标准化 2024年第1期37卷 26-30页

作者：郗卓宁吴启迪叶兰江伟王猛中国移动通信集团有限公司北京100033 中国移动通信集团设计院有限公司北京100080 中国移动通信集团设计院有限公司安徽分院合肥230041

随着信息技术的迅速发展,芯片架构的不断演进已成为推动产业进步的重要因素。新的芯片架构能够支持更高效的数据处理和分析,为人工智能、机器学习和大数据等新技术的应用提供技术基础。同时,针对芯片的政策和法规对产业演进也有直接影... 详细信息

随着信息技术的迅速发展,芯片架构的不断演进已成为推动产业进步的重要因素。新的芯片架构能够支持更高效的数据处理和分析,为人工智能、机器学习和大数据等新技术的应用提供技术基础。同时,针对芯片的政策和法规对产业演进也有直接影响。未来,芯片架构会更加多样化和复杂化,为产业的持续创新和发展提供新的机会。本文深入分析芯片架构演进对产业发展的影响,制定有效的技术发展路径和产业政策,为政策制定者和企业决策者提供有益参考。

关键词：芯片架构半导体行业人工智能

Electrochemical corrosion behavior of arc sprayed Zn-Al coatings

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中国有色金属学会会刊：英文版 2004年第z1期14卷 443-445页

作者： LIU Yan ZHU Zi-xin CHEN Yong-xiong XU Bin-shi MA Shi-ning LI zhuo-xin National Key Laboratory for Remanufacturing Academy of Armored Forces Engineering Beijing 100072 China College of Materials Science and Engineering Beijng University of Technology Beijing 100022 China National Key Laboratory for Remanufacturing Academy of Armored Forces Engineering Beijing 100072 China National Key Laboratory for Remanufacturing Academy of Armored Forces Engineering Beijing 100072 China National Key Laboratory for Remanufacturing Academy of Armored Forces Engineering Beijing 100072 China School of Materials Science and Engineering Surface Engineering Research Institute CMES Beijing 100072 China College of Materials Science and Engineering Beijng University of Technology Beijing 100022 China

Cored wires and high velocity arc spraying (HVAS) technique were applied to produce high Al content Zn-Al alloy coatings on low carbon steel substrates. The electrochemical corrosion behaviors of Zn, Al and Zn-Al coatings were studied with potentiodynamic measurement in 5 % NaCl solution. Compared with pure Zn, pure Al and Zn-15Al coatings, Zn-26Al coatings show a higher corrosion resistance in salt solution. The potentiodynamic polarization tests show that the corrosion resistance of Zn-Al coatings increases as Al content is raised. Pure Al coating exhibits different electrochemical behaviors with other coatings. The corrosion initiated at the micro-pores of the coating and the underlying corrosion mechanism is very similar to that of the pitting corrosion.

关键词： coating electrochemical corrosion high velocity arc spraying potentiodynamic polarization

界面特性对InAs/GaSb Ⅱ型超晶格光学性质影响理论研究

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发光学报 2024年第5期45卷 817-823页

作者：马泽军李远朱申波程凤敏刘俊岐王利军翟慎强卓宁陈涌海张锦川刘舒曼刘峰奇中国科学院半导体研究所固态光电信息技术实验室北京100083 中国科学院大学材料科学与光电技术学院北京100049

InAs/GaSb Ⅱ型超晶格是中红外谱段光电子器件的核心结构,其Ⅱ型能带排列特点使电子、空穴在实空间分离而跨过界面,其非公共原子构型使得界面态丰富。我们在Burt-Foreman包络函数理论的基础上,讨论了不同界面态对超晶格电子能态和波函... 详细信息

InAs/GaSb Ⅱ型超晶格是中红外谱段光电子器件的核心结构,其Ⅱ型能带排列特点使电子、空穴在实空间分离而跨过界面,其非公共原子构型使得界面态丰富。我们在Burt-Foreman包络函数理论的基础上,讨论了不同界面态对超晶格电子能态和波函数的调控作用。理论计算表明,超晶格缓变界面和界面势两种不对称界面态分布,都会导致重空穴带的自旋劈裂,而只有施加界面势时才会使得轻空穴带发生自旋劈裂。此外,研究了改变阱宽和改变势垒时超晶格体系带隙的变化趋势。结果表明,随着势垒厚度增大,陡峭界面和缓变界面两种界面态下的带隙计算结果逐渐降低,并且随着厚度增加带隙趋于收敛,而界面势下的带隙计算结果随着势垒厚度的增大而增大,与前两者呈现相反的趋势,这为中红外超晶格器件的精确设计提供了可参考的理论基础。

关键词：锑化物超晶格界面态前后向差分法

High-power distributed feedback lasers based on InP corrugated sidewalls atλ~2μm

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光子学研究:英文版 2023年第8期11卷 1390-1396页

作者： YONGQIANG SUN YUNFEI XU JINCHUAN ZHANG FENGMIN CHEN JUNQI LIU SHUMAN LIU QUANYONG LU ning zhuo LIJUN WANG FENGQI LIU SHENQIANG ZHAI Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsBeijing Key Laboratory of Low Dimensional Semiconductor Materials and DevicesChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Beijing Academy of Quantum Information Sciences Beijing 100193China

We report a high-power single-mode InP-based 2μm distributed feedback(DFB)laser with a second-order buried grating and corrugated sidewalls.A second-order semiconductor grating is used for in-plane feedback and vertical *** corrugated sidewalls are used to eliminate higher-order transverse *** the DFB laser with a 2 mm long cavity and 15μm wide ridge,the maximum continuous-wave edge-emitting and surface-emitting single-mode powers at 300 K are up to 81 and 42 m W,respectively.A single-lobed far-field radiation pattern with a low divergence angle of approximately 8.6°is achieved by a device with a ridge width of 15μ*** single-longitudinal-mode emission wavelength of the fabricated laser can be adjusted from2003.8 nm at 288 K to 2006.9 nm at 313 K without any mode *** single-mode emission with a side-mode suppression ratio of 30 dB is achieved under all injection currents and temperature conditions.

关键词： 2μm power walls

Continuous-wave single-mode quantum cascade laser at 5.1 THz based on graded sampled grating design

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Photonics Research 2022年第12期10卷 2686-2692页

作者： WEIJIANG LI YU MA YUNFEI XU JUNQI LIU LIJUN WANG ning zhuo QUANYONG LU JINCHUAN ZHANG SHENQIANG ZHAI SHUMAN LIU FENGQI LIU Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of SciencesBeijing 101408China Division of Quantum Materials and Devices Beijing Academy of Quantum Information SciencesBeijing 100193China

We report on the terahertz(THz)quantum cascade lasers in continuous-wave(CW)operation with an emitting frequency above 5 *** performance with a smaller leakage current and higher population inversion efficiency is obtained by one-well bridged bound-to-continuum hybrid quantum design at 5 *** designing and fabricating a graded metallic sampled distributed feedback grating in the waveguide,the first single-mode THz quantum cascade laser at 5.13 THz in CW operation mode is *** maximum single-mode optical power of~48 mW is achieved at 15 K with a side-mode suppression ratio above 24 *** will draw great interest in the spectroscopy applications above the 5 THz range for THz quantum cascade lasers.

关键词： waveguide mode quantum

Interband cascade lasers with short electron injector

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Chinese Optics Letters 2022年第2期20卷 142-147页

作者： Chao ning Tian Yu Shuman Liu Jinchuan Zhang Lijun Wang Junqi Liu ning zhuo Shenqiang Zhai Yuan Li Fengqi Liu Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Key Laboratory of Semiconductor Materials ScienceInstitute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Opto-Electronic Engineering University of Chinese Academy of SciencesBeijing 100049China Beijing Academy of Quantum Information Sciences Beijing 100193China

We demonstrate Ga Sb-based interband cascade lasers(ICLs) emitting around 3.65 μm, which exhibit a room-temperature continuous-wave(CW) output power above 100 m W. Cavity-length analysis showed that the laser structure has a low internal loss of 3 cm^(-1) while maintaining a total internal quantum efficiency greater than one. After 6400 h CW operation at 25°C,the threshold current of the laser increased by 3%, and the output power decreased by 7%, indicating good reliability of the device.

关键词： interband cascade lasers quantum well mid-infrared semiconductor lasers