Interband cascade lasers with short electron injector

作     者：Chao Ning Tian Yu Shuman Liu Jinchuan Zhang Lijun Wang Junqi Liu Ning Zhuo Shenqiang Zhai Yuan Li Fengqi Liu 宁超;于天;刘舒曼;张锦川;王利军;刘俊岐;卓宁;翟慎强;李远;刘峰奇

作者机构：Beijing Key Laboratory of Low Dimensional Semiconductor Materials and DevicesKey Laboratory of Semiconductor Materials ScienceInstitute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Opto-Electronic EngineeringUniversity of Chinese Academy of SciencesBeijing 100049China Beijing Academy of Quantum Information SciencesBeijing 100193China 

出 版 物：《Chinese Optics Letters》 (中国光学快报（英文版）)

年 卷 期：2022年第20卷第2期

页      面：142-147页

核心收录：

学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0803[工学-光学工程] 0702[理学-物理学] 

基　　金：This work was supported by the National Key Research and Development Project(No.2018YFB2200500) the National Natural Science Foundation of China(Nos.61790583 and 61774150) 

主　　题：interband cascade lasers quantum well mid-infrared semiconductor lasers 

摘      要：We demonstrate Ga Sb-based interband cascade lasers(ICLs) emitting around 3.65 μm, which exhibit a room-temperature continuous-wave(CW) output power above 100 m W. Cavity-length analysis showed that the laser structure has a low internal loss of 3 cm^(-1) while maintaining a total internal quantum efficiency greater than one. After 6400 h CW operation at 25°C,the threshold current of the laser increased by 3%, and the output power decreased by 7%, indicating good reliability of the device.