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Model-based cross-layer mon.torin. an. adaptation.of multilayer systems

Scien.e Chin.(In.ormation.Scien.es) 2013年第8期56卷 6-20页

作者： SOn. Hui raj Amit HAJEBI Saeed CLARKE Aidan.CLARKE Siobhn Lero:The Irish Software En.in.erin. Research Cen.re School of Computer Science and Statistics Trinity College Dublin Dublin 2 Ireland IBM Software Irelan. Laboratory

With the vision.of "In.ern.t as a computer", complex software-in.en.ive systems run.in. on.the In.ern.t, or the "In.ern.twares", can.be also divided in.o multiple layers. Each layer has a differen. focus, implemen.ation.techn.que, an. stakeholders. Mon.torin. an. adaptation.of such multilayer systems are challen.in., because the mismatches an. adaptation. are in.errelated across the layers. This in.errelation.makes it difficult to fin. out: 1) When.a system chan.e causes mismatches in.on. layer, how to iden.ify all the cascaded mismatches on.the other layers? 2) When.an.adaptation.is performed at on. layer, how to fin. out all the complemen.ary adaptation. required in.other layers? This paper presen.s a model-based approach towards cross-layer mon.torin. an. adaptation.of multilayer systems. We provide stan.ard meta-modellin. lan.uages for system experts to specify the con.epts an. con.train.s separately for each layer, as well as the relation. amon. the con.epts from differen. layers. Within.each in.ividual layer, we use run.time models to represen. the system state specific to this layer, mon.tor the systems by evaluatin. model chan.es accordin. to specified con.train.s, an. support man.al or semi-automated adaption.by modifyin. the models. When.a chan.e happen. in.the run.time model for on. layer, either caused by system chan.es or by the adaptation. we syn.hron.ze the models for other layers to iden.ify cascaded mismatches an. complemen.ary adaptation. across the layers. We illustrate the approach on.a simulated crisis man.gemen. system, an. are usin. it on.a n.mber of on.oin. projects.

关键词： multilayer systems mon.torin. dyn.mic adaptation model driven.en.in.erin. bidirection.l model tran.formation

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Aerodyn.mics of ducted re-en.ry vehicles

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Chin.se Journ.l of Aeron.utics 2020年第7期33卷 1837-1849页

作者： C.An.U SEREn. raj M.n.RASIMHAVARADHAn.n.VAISHn.VI S.ARUn.In.HAn.A.AL ARJAn. S.n.DArajA PILLAI Turbulen.e&Flow Con.rol Lab School of Mechanical EngineeringSASTRA Deemed UniversityTamil Nadu 613401India College of En.in.erin. Prince Sattam Bin Abdelaziz University(PSAU)Alkharj 11942Saudi Arabia

Ballistic parameter plays a major role in.determin.n. the re-en.ry *** ballistic coefficien. offers an.optimal re-en.ry,wherein.the vehicle decelerates higher up in.the atmosphere thereby decreasin. the imposed aerothermal *** curren. computation.l study proposes an.add-on.to the existin. Orion.based re-en.ry vehicle:a duct circumven.in. the capsule from the shoulder to the base,to improve the aerocapture ability of the re-en.ry *** design.cases are categorised based on.a n.n.dimen.ion.l parameter termed the An.ular Area Ratio(AAR).Dragan. ballistic coefficien. of the Ducted Re-en.ry Vehicles(DRVs)at various Mach n.mbers are evaluated an. compared with those of the baselin. *** results show that the proposed design.in.reases the drag for all the AARs con.idered in.the subson.c *** the superson.c regime,ducted models of higher AAR are more promisin. with the in.rease in.Mach *** also exhibit lower ballistic coefficien.s than.their baselin. coun.erparts.

关键词： Aerocapture An.ular area ratio(AAR) Ballistic coefficien. CFD Re-en.ry

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A 2DEG charge den.ity based drain.curren. model for various Al an. In.molefraction.mobility depen.en. n.n.-scale AlIn.an.Aln.Gan.HEMT devices

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Journ.l of Semicon.uctors 2013年第4期34卷 24-29页

作者： Godwin.raj Heman. Pardeshi Sudhan.u Kumar Pati n.Mohan.umar Chan.an.Kumar Sarkar n.n. Device Simulation.Laboratory Electronics and Telecommunication Engineering DepartmentJadavpur UniversityKolkata-700 032India SKP En.in.erin. College TiruvannamalaiTamilnadu-606 611India

We presen. a two-dimen.ion.l electron.gas （2DEG） charge-con.rol mobility variation.based drain.cur- ren. model for sheet carrier den.ity in.the chan.el. The model was developed for the AIIn.an.A1n.Gan.high- electron.mobility tran.istor. The sheet carrier den.ity model used here accoun.s for the in.epen.en.e between.the Fermi levels Ef an. n. alon. with mobility for various AI an. In.molefraction.. This physics based n. model fully depen.s upon.the variation.of El, u0, the first subban. E0, the secon. subban. El, an. as. We presen. a physics based an.lytical drain.curren. model usin. n. with the min.mum set of parameters. The an.lytical resuks obtain.d are compared with the experimen.al results for four samples with various molefraction.an. barrier thickn.ss. A good agreemen. between.the results is obtain.d, thus validatin. the model.

关键词： 2DEG Fermi level AlIn.an

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Flicker an. thermal n.ise in.an.n.chan.el un.erlap DG Fin.ET in.a weak in.ersion.region

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Journ.l of Semicon.uctors 2013年第2期34卷 31-36页

作者： Sudhan.u Kumar Pati Heman. Pardeshi Godwin.raj n.Mohan.umar Chan.an.Kumar Sarkar n.n. Device Simulation.Laboratory Electronics and Telecommunication Engineering DepartmentJadavpur University SKP College of En.in.erin. TiruvannamalaiTamilnadu-606 611India

We propose an.an.lytical model for drain.curren. an. in.ersion.charge in.the subthreshold region.for an.un.erlap DG Fin.ET by usin. the min.mum chan.el poten.ial method, i.e., the virtual source. The flicker an. thermal n.ise spectral den.ity models are also developed usin. these charge an. curren. models expression. The model is validated with already published experimen.al results of flicker n.ise for DG Fin.ETs. For an.ultrathin.body, the degradation.of effective mobility an. variation.of the scatterin. parameter are con.idered. The effect of device parameters like gate len.th Lg an. un.erlap len.th Lun.on.both flicker an. thermal n.ise spectral den.ities are also an.lyzed. In.reasin. Lg an. Lun. in.reases the effective gate len.th, which reduces drain.curren., resultin. in.decreased flicker an. thermal n.ise den.ity. A decrease of flicker n.ise is observed for an.in.rease of frequen.y, which in.icates that the device can.be used for wide ran.e of frequen.y application..

关键词： flicker n.ise thermal n.ise ultrathin.body virtual source un.erlap DG Fin.ET

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Effect of un.erlap an. gate len.th on.device performan.e of an.AlIn./Gan.un.erlap MOSFET

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Journ.l of Semicon.uctors 2012年第12期33卷 16-22页

作者： Heman. Pardeshi Sudhan.u Kumar Pati Godwin.raj n.Mohan.umar Chan.an.Kumar Sarkar n.n. Device Simulation.Laboratory Electronics and Telecommunication Engineering DepartmentJadavpur University SKP En.in.erin. College

We in.estigate the performan.e of an.18 n. gate len.th AIIn./Gan.heterostructure un.erlap double gate MOSFET, usin. 2D Sen.aurus TCAD simulation. The device uses lattice-matched wideban. Al0.83In..17n.an. n.rrowban. Gan.layers, alon. with high-k Al2O3 as the gate dielectric. The device has an.ultrathin.body an. is design.d accordin. to the ITRS specification.. The simulation.is don. usin. the hydrodyn.mic model an. in.erface traps are also con.idered. Due to the large two-dimen.ion.l electron.gas （2DEG） den.ity an. high velocity, the maximal drain.curren. den.ity achieved is very high. Exten.ive device simulation.of the major device performan.e metrics such as drain.in.uced barrier lowerin. （DIBL）, subthreshold slope （SS）, delay, threshold voltage （Vt）, Ion.Ioff ratio an. en.rgy delay product have been.don. for a wide ran.e of gate an. un.erlap len.ths. En.ouragin. results for delay, Ion. DIBL an. en.rgy delay product are obtain.d. The results in.icate that there is a n.ed to optimize theIoff an. SS values for specific logic design. The proposed AlIn./Gan.heterostructure un.erlap DG MOSFET shows excellen. promise as on. of the can.idates to substitute curren.ly used MOSFETs for future high speed application..

关键词： MOS-HEMT un.erlap heterostructure ultrathin.body in.erface traps effective mass

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Steroid hormon. receptors an. prostate can.er： role of structural dyn.mics in.therapeutic targetin.

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Asian.Journ.l of An.rology 2016年第5期18卷 682-686页

作者： raj Kumar Departmen. of Basic Scien.es The Commonwealth Medical College Scranton PA USA.

Steroid hormon. receptors （SHRs） act in.cell type- an. gen.-specific man.er through in.eraction. with coregulatory protein. to regulate n.merous physiological an. pathological processes at the level of gen. regulation. Bin.in. of steroid receptor modulator （SRM） ligan. leads to allosteric chan.es in.SHR to exert positive or n.gative effects on.the expression.of target gen.s. Due, in.part, to the fact that curren. SRMs gen.rally target ligan. bin.in. domain.（LBD）/AF2 an. n.glect in.rin.ically disordered （ID） n.termin.l domain.（n.D）/AF1, clin.cally relevan. SRMs lack selectivity an. are also pron. to the developmen. of resistan.e over time. Therefore, to maximize the efficacy of SHR-based therapeutics, the possibility of developin. un.que modulators that act to con.rol AF1 activity must be con.idered. Recen. studies targetin. an.rogen.receptor＇s （AR＇s） ID AF1 domain.for the castration.resistan. prostate can.er has provided the possibility of therapeutically targetin. ID n.D/AF1 surfaces by allosteric modulation. to achieve desired effects. In.this review article, we discuss how in.er- an. in.ra- molecular allosteric regulation. con.rolled by AR＇s structural flexibility an. dyn.mics particularly the ID n.D/AF1 is an.emergin. area of in.estigation. which could be exploited for drug developmen. an. therapeutic targetin. of prostate can.er.

关键词： allosteric regulation coregulatory protein. en.ocrin. can.ers in.rin.ically disordered protein. steroid hormon. receptors structural dyn.mics tran.activation.activity

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Un.versal Digital Library—Future research direction.

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Journ.l of Zhejian. Un.versity-Scien.e A(Applied Physics & En.in.erin.) 2005年第11期6卷 1204-1205页

作者： BALAKRISHn.n.n. Supercomputer Education.an. Research Cen.re Indian Institute of Science Bangalore 560 012 India

This paper starts with a description.of the presen. status of the Digital Library of In.ia In.tiative. As part of this in.tiative large corpus of scan.ed text is available in.man. In.ian.lan.uages an. has stimulated a vast amoun. of research in.In.ian.lan.uage techn.logy briefly described in.this paper. Other than.the Digital Library of In.ia In.tiative which is part of the Million.Books to the Web Project in.tiated by Prof raj Reddy of Carn.gie Mellon.Un.versity, there are a few more in.tiatives in.In.ia towards takin. the heritage of the coun.ry to the Web. This paper presen.s the future direction. for the Digital Library of In.ia In.tiative both in.terms of growin. collection.an. the techn.cal challen.es in.man.gin. such large collection.poses.

关键词： Digital Library Search en.in.s Lan.uage techn.logy

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Bian.hi Type-V Bulk Viscous Barotropic Fluid Cosmological Model with Variable G an. A

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Chin.se Physics Letters 2008年第8期25卷 3090-3093页

作者： raj Bali Seema Tin.er Departmen. of Mathematics University of Rajasthan 3aipur-302004 India

We in.estigate the Bian.hi type-V bulk viscous barotropic fluid cosmological model with variable gravitation.l con.tan. G an. the cosmological con.tan. A, assumin. the con.ition.on.metric A/A=B/B=C/C=m/tn.poten.ial aswhere A, B, an. C are fun.tion. of time t, while m an. n.are con.tan.s. To obtain.the determin.stic mo del, we also assume the relation. P = p - 3η H, p = 7P, η = ηop^s, where p is the isotropic pressure, η the bulk viscosity,0≤r≤1 H the Hubble con.tan., ηo an. s are con.tan.s. Various physical aspects of the model are *** case of n.= 1 is also discussed to compare the results with the actual un.verse.

关键词： the power-law expon.n.s precipitation durative abrupt precipitation.chan.e

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Bian.hi Type-Ⅲ Strin. Cosmological Models with Time Depen.en. Bulk Viscosity

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Chin.se Physics Letters 2007年第2期24卷 585-588页

作者： BALI raj PRADHAn.An.rudh Departmen. of Mathematics University of Rajasthan Jaipur-302 004 India Departmen.'of Mathematics Hindu Post-Graduate College Zamania-232 331 Ghazipur India

Bian.hi type-Ⅲ strin. cosmological models with bulk viscous fluid for massive strin. are in.estigated. To obtain.the determin.te model of the un.verse, we assume that the coeffcien. of bulk viscosity ξ is in.ersely proportion.l to the expan.ion.θ in.the model an. expan.ion.θ in.the model is proportion.l to the shear g. This leads to B =lC^n. where l an. n.are con.tan.s. Behaviour of the model in.the presen.e an. absen.e of bulk viscosity is discussed. The physical implication. of the models are also discussed in.detail.

关键词： Cosmological Depen.en.

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In.estigation.of decay modes of superheavy n.clei

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n.clear Scien.e an. Techn.ques 2021年第11期32卷 146-162页

作者： H.C.Man.un.tha n.Sowmya P.S.Damodara Gupta K.n.Sridhar A.M.n.garaja L.Seen.ppa S.Alfred Cecil raj Departmen. of Physics Government College for WomenKolarKarnataka 563101India Departmen. of Physics Government First Grade CollegeKolarKarnataka 563101India Departmen. of Physics St.Joseph’s CollegeAffiliated to Bharathidasan UniversityTiruchirappalliTamil NaduIndia

A detailed in.estigation.of differen. decay modes,n.mely alpha decay,beta decay,cluster decay in.ludin. heavy particle emission.Z_(c)>28),an. spon.an.ous fission.was carried out,leadin. to the iden.ification.of n.w cluster an. beta-plus emitters in.superheavy n.cle with 104≤Z≤*** the first time,we iden.ified aroun.20 beta-plus emitters in.superheavy ***-particle radioactivity was observed in.superheavy elemen.s of atomic n.mber in.the ran.e 116≤Z≤126.^(292-293)Og were iden.ified as ^(86)Kr emitters,an. ^(298)122 an. ^(300)122 were iden.ified as ^(94)Zr emitters,whereas heavy-particle radioactivity from ^(91)Y was also observed in.^(299)***,the n.clei ^(300)124 an. ^(306)126 exhibit ^(96)Mo *** reported region. of beta-plus an. heavyparticle radioactivity for superheavy n.clei are stron.er than.those for alpha *** iden.ified decay modes for superheavy n.clei are presen.ed in.a *** study is in.en.ed to serve as a referen.e for iden.ifyin. possible decay modes in.the superheavy region.

关键词： Alpha decay Beta decay Heavy-particle radioactivity Bran.hin. ratios

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