Flicker and thermal noise in an n-channel underlap DG FinFET in a weak inversion region

作     者：Sudhansu Kumar Pati Hemant Pardeshi Godwin Raj N Mohankumar Chandan Kumar Sarkar 

作者机构：Nano Device Simulation LaboratoryElectronics and Telecommunication Engineering DepartmentJadavpur University SKP College of EngineeringTiruvannamalaiTamilnadu-606 611India 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2013年第34卷第2期

页      面：31-36页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 080904[工学-电磁场与微波技术] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0810[工学-信息与通信工程] 081105[工学-导航、制导与控制] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 081001[工学-通信与信息系统] 081002[工学-信号与信息处理] 0825[工学-航空宇航科学与技术] 0811[工学-控制科学与工程] 0702[理学-物理学] 

主　　题：flicker noise thermal noise ultrathin body virtual source underlap DG FinFET 

摘      要：We propose an analytical model for drain current and inversion charge in the subthreshold region for an underlap DG FinFET by using the minimum channel potential method, i.e., the virtual source. The flicker and thermal noise spectral density models are also developed using these charge and current models expression. The model is validated with already published experimental results of flicker noise for DG FinFETs. For an ultrathin body, the degradation of effective mobility and variation of the scattering parameter are considered. The effect of device parameters like gate length Lg and underlap length Lun on both flicker and thermal noise spectral densities are also analyzed. Increasing Lg and Lun, increases the effective gate length, which reduces drain current, resulting in decreased flicker and thermal noise density. A decrease of flicker noise is observed for an increase of frequency, which indicates that the device can be used for wide range of frequency applications.