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Immunocytochemical Identification and Localization of Diffuse Neuroendocrine System (DNES) Cells in Gastrointestinal Tract of Channel Catfish (Ictalurus punctatus)

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Agricultural Sciences in China 2009年第2期8卷 238-243页

作者： HE min WANG Kai-yu zhang yu College of Veterinary Medicine Sichuan Agricultural University Ya＇an 625014 P.R.China

To detect distribution and relative frequency of diffuse neuroendocrine system （DNES） cells in the gastrointestinal tract of channel catfish （lctalurus punctatus）, the intestinal tract of channel catfish was divided into seven portions from proximal to distal： the enlarged area after oesophagus, cardia, fundus, pylorus, and anterior, middle, and posterior intestine. Immunohistochemical method using the strept avidin-biotin-complex （SABC） was employed. All antisera between seven portions of the channel catfish were compared statistically using statistical package for the social science （SPSS）. Five types of DNES ceils were determined： neuropeptide Y-immunoreactive （NPY-IR） cells were demonstrated in both anterior and middle intestine; serotonin （5-HT） immunoreactive cells were detected throughout the whole gastrointestinal tract; vasoactive intestinal peptide （VIP） positive cells were at the highest frequency in pylorus; glucagon-immunoreactive （GLU-IR） cells were moderate in number in the fundus and anterior, middle intestine, and no immunoreactivity was determined in the other portions; somatostatin （SOM） positive cells were more abundant in the anterior and middle intestine. The regional distribution and relative frequency of immunoreactive cells in the channel catfish, Ictalurus punctatus, are essentially similar to those of other fish. However, some characteristics are observed in this species, which further proved that the diversity of the physiological function of DNES cells was based on their morphology.

关键词： channel catfish lctalurus punctatus gastrointestinal tract DNES cells immunocytochemistry

t(4;11)translocation in hyperdiploid de novo adult acute myeloid leukemia:A case report

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World Journal of Clinical Cases 2022年第32期10卷 11980-11986页

作者： min-yu zhang yue Zhao Ji-Hong zhang Hematology Laboratory Shengjing Hospital of China Medical UniversityShenyang 110022Liaoning ProvinceChina

BACKGROUND MLL gene rearrangement is a common genetic abnormality of acute myeloid leukemia(AML),which predicts poor prognosis and is important in clinical *** rearrangement involves many chromosomes,among which,t(4;11)translocation is rare in *** present case was t(4;11)AML,accompanied by a hyperdiploid *** cases have not been reported *** SUMMARY An adult male with self-reported symptoms of fatigue,febrility and hyperleukocytosis was diagnosed with AML by morphology and confirmed by immunophenotype ***,chromosomal and fluorescence in situ hybridization(FISH)analysis showed a hyperdiploid karyotype with t(4;11)translocation and MLL rearrangement,and a negative MLL–AF4 fusion gene *** patient died of respiratory and circulatory failure 5 days after *** t(4;11)AML with hyperdiploid karyotype has not been *** this case,t(4;11)was only detected by karyotype analysis and FISH,suggesting their importance in MLL rearrangement detection.

关键词： Acute myeloid leukemia MLL gene rearrangement Translocation t(4 11) Hyperdiploid FISH Case report

A Multi-model,Large-range Flexible Strain Sensor Based on Carbonized Silk Habotai for Human Health Monitoring

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Chinese Journal of Polymer Science 2023年第8期41卷 1238-1249,I0008页

作者： Shi-Dong Ma yu-Ting Wu Jian Tang yu-min zhang Tao Yan Zhi-Juan Pan College of Textile and Clothing Engineering Soochow UniversitySuzhou 215123China National Engineering Laboratory for Modern Silk Suzhou 215123China

In recent years,flexible strain sensors have received considerable attention owing to their excellent flexibility and ***,it is still a great challenge for them to accurately monitor multi-model deformations with high sensitivity and *** this study,the industrial insulating silk habotai was successfully converted into carbonized silk habotai(CSH)for use in strain sensors.A strain sensor created using CSH exhibited excellent sensing performance under multi-model deformations,including stretching,twist and *** maximum tensile strain was 434%.The gauge factors were 14.6 in the wide tensile range of 0%–400%with a high linearity of *** addition,the CSH strain sensor exhibited an extremely fast response time(110 ms)and could accurately detect bending(0°–180°)and torsional(0°–180°)*** durability and repeatability were observed for the multi-model ***,a new type of smart pillow was developed to accurately record head movement and breathing during *** sensor may also be used for auxiliary training in table *** proposed CSH strain sensor has shown great potential for applications in smart devices and human-machine interactions.

关键词： Carbonized silk habotai Strain sensor Smart pillow Human motions

Synthesis of diethers derived from furoin by phase transfer catalysis under microwave irradiation

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Chinese Chemical Letters 2007年第7期18卷 791-794页

作者： Feng zhang Ya Zhuo Li Da Wei Gao Ji Kui Sun yu min zhang College of Chemistry Jilin University Changchun Jilin 130012 China

A series of new diethers were obtained by alkylation of furoin under microwave irradiation （MWI） in phase transfer catalysis （PTC） conditions. The products of alkyl halides were synthesized in good yields （〉75%） within a few minutes, and the products of dihalides were synthesized in fair yields （about 45%）. The yields are dramatically improved compared to conventional heating under the same conditions, in spite of similar profiles of rising in temperature.

关键词： Microwave irradiation Furoin Phase transfer catalysis O-Alkylation

The complete mitogenome of Lamproptera curia （Lepidoptera： Papilionidae） and phylogenetic analyses of Lepidoptera

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Frontiers in Biology 2015年第5期10卷 458-472页

作者： Xin-min Qin Qing-Xin Guan Hui-min Li yu zhang yu-Ji Liu Dan-Ni Guo Guangxi Key Laboratory of Rare and Endangered Animal Ecology College of Life Science Guangxi Normal University Guilin 541004China

The complete mitochondrial genome sequence of Lamproptera curia was determined in the present study. Our findings showed that the mtDNA of L. curia had a typical organization of insect mitochrondrial DNA - being 15277 base pairs in length, it contained 13 protein-coding genes （PCGs）, 2 rRNA genes, 22 tRNA genes, and a control region （CR）. The newly determined sequence was used for phylogenetic analyses, together with those of 45 species of Lepidoptera published elsewhere, including sequences of three species of Diptera as outgroups. The phylogenetic trees were constructed using the concatenated amino acid and nucleotide sequences of the 13 protein-coding genes （PCGs） based on the maximum likelihood （ML） and Bayesian inference （BI） methods. Both BI and ML trees revealed a similar topology structure：（（（（（Bombycoidea ＋ Geometroidea）＋ Noctuoide）＋ Pyraloidea）＋（Papilionoidea ＋ Hesperioidea））＋ Tortricoidea）. Furthermore, the phylogenetic analyses demonstrated that each of the 16 families belonged to a monophyletic group respectively. The results of molecular phylogeny from the present study were congruent with traditional classification based on morphology but failed to demonstrate the monophyly of Hesperiidae.

关键词： Lamproptera curia phylogeny mitochondrial genome

Dislocation slip behaviors in high-quality bulk GaN investigated by nanoindentation

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Chinese Physics B 2021年第11期30卷 445-448页

作者： Kai-Heng Shao yu-min zhang Jian-Feng Wang Ke Xu School of Nano-Tech and Nano-Bionics University of Science and Technology of ChinaHefei 230026China Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences(CAS)Suzhou 215123China Suzhou Nanowin Science and Technology Co. LtdSuzhou 215123China

The dislocation slip behaviors in GaN bulk crystal are investigated by nanoindentation, the dislocation distribution patterns formed around an impress are observed by cathodoluminescence(CL) and cross-sectional transmission electron microscope(TEM). Dislocation loops, vacancy luminescence, and cross-slips show hexagonal symmetry around the 11-20 and 1-100 direction on c-plane. It is found that the slip planes of dislocation in GaN crystal are dominated in {0001}basal plane and {10-11} pyramid plane. According to the dislocation intersection theory, we come up with the dislocation formation process and the related mechanisms are discussed.

关键词： GaN dislocation nanoindentation cathodoluminescence TEM

Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by Fe doped GaN substrate

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Science China(Information Sciences) 2024年第6期67卷 461-462页

作者： Xiao WANG Zhi-yu LIN yuan-Hang SUN Long yuE yu-min zhang Jian-Feng WANG Ke XU School of Nano-Tech and Nano-Bionics University of Science and Technology of China Suzhou Institute of Nano-tech and Nano-bionics Chinese Academy of Sciences Information Materials Research Department Suzhou laboratory Suzhou Nanowin Science and Technology Co. Ltd. Jiangsu Institute of Advanced Semiconductors

In the process of homoepitaxy AlGaN/GaN heterojunction by metal-organic chemical vapor deposition (MOCVD) on free-standing substrates,Si impurities from the air and reaction chamber accumulate at the regrowth interfac... 详细信息

关键词： current interface hemts algan doped leakage regrowth substrate suppression

Growth and doping of bulk GaN by hydride vapor phase epitaxy

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Chinese Physics B 2020年第2期29卷 31-44页

作者： yu-min zhang Jian-Feng Wang De-min Cai Guo-Qiang Ren yu Xu ming-yue Wang Xiao-Jian Hu Ke Xu Suzhou Institute of Nano-tech and Nano-bionics Chinese Academy of SciencesSuzhou 215123China Suzhou Nanowin Science and Technology Co. Ltd.Suzhou 215123China

Doping is essential in the growth of bulk GaN substrates,which could help control the electrical properties to meet the requirements of various types of GaN-based *** progresses in the growth of undoped,Si-doped,Ge-doped,Fedoped,and highly pure GaN by hydride vapor phase epitaxy(HVPE) are reviewed in this *** growth technology and precursors of each type of doping are ***,the influence of doping on the optical and electrical properties of GaN are presented in ***,the problems caused by doping,as well as the methods to solve them are also *** last,highly pure GaN is briefly introduced,which points out a new way to realize high-purity semi-insulating(HPSI) GaN.

关键词： GaN hydride vapor phase epitaxy(HVPE) doping

Electrochemical liftoff of freestanding GaN by a thick highly conductive sacrificial layer grown by HVPE

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Chinese Physics B 2021年第6期30卷 531-535页

作者： Xiao Wang yu-min zhang yu Xu Zhi-Wei Si Ke Xu Jian-Feng Wang Bing Cao School of Optoelectronic Science and Engineering Soochow UniversitySuzhou 215006China Key Laboratory of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Laboratory of Modern Optical Technologies of Education ministry of China Soochow UniversitySuzhou 215006China Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO) Chinese Academy of Sciences(CAS)Suzhou 215123China Suzhou Nanowin Science and Technology Co. LtdSuzhou 215123China

Separation technology is an indispensable step in the preparation of freestanding GaN substrate. In this paper, a largearea freestanding GaN layer was separated from the substrate by an electrochemical liftoff process on a sandwich structure composed of an Fe-doped GaN substrate, a highly conductive Si-doped sacrificial layer and a top Fe-doped layer grown by hydride vapor phase epitaxy(HVPE). The large difference between the resistivity in the Si-doped layer and Fe-doped layer resulted in a sharp interface between the etched and unetched layer. It was found that the etching rate increased linearly with the applied voltage, while it continuously decreased with the electrochemical etching process as a result of the mass transport limitation. Flaky GaN pieces and nitrogen gas generated from the sacrificial layer by electrochemical etching were recognized as the main factors responsible for the blocking of the etching channel. Hence, a thick Si-doped layer grown by HVPE was used as the sacrificial layer to alleviate this problem. Moreover, high temperature and ultrasonic oscillation were also found to increase the etching rate. Based on the results above, we succeeded in the liftoff of ~ 1.5 inch GaN layer. This work could help reduce the cost of freestanding GaN substrate and identifies a new way for mass production.

关键词： electrochemical etching liftoff hydride vapor phase epitaxy(HVPE) freestanding GaN