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Dislocation slip behaviors in high-quality bulk GaN investigated by nanoindentation

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Chinese Physics B 2021年第11期30卷 445-448页

作者： Kai-Heng Shao yu-min zhang Jian-Feng Wang Ke Xu School of Nano-Tech and Nano-Bionics University of Science and Technology of ChinaHefei 230026China Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences(CAS)Suzhou 215123China Suzhou Nanowin Science and Technology Co. LtdSuzhou 215123China

The dislocation slip behaviors in GaN bulk crystal are investigated by nanoindentation, the dislocation distribution patterns formed around an impress are observed by cathodoluminescence(CL) and cross-sectional transmission electron microscope(TEM). Dislocation loops, vacancy luminescence, and cross-slips show hexagonal symmetry around the 11-20 and 1-100 direction on c-plane. It is found that the slip planes of dislocation in GaN crystal are dominated in {0001}basal plane and {10-11} pyramid plane. According to the dislocation intersection theory, we come up with the dislocation formation process and the related mechanisms are discussed.

关键词： GaN dislocation nanoindentation cathodoluminescence TEM

Growth and doping of bulk GaN by hydride vapor phase epitaxy

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Chinese Physics B 2020年第2期29卷 31-44页

作者： yu-min zhang Jian-Feng Wang De-min Cai Guo-Qiang Ren yu Xu ming-yue Wang Xiao-Jian Hu Ke Xu Suzhou Institute of Nano-tech and Nano-bionics Chinese Academy of SciencesSuzhou 215123China Suzhou Nanowin Science and Technology Co. Ltd.Suzhou 215123China

Doping is essential in the growth of bulk GaN substrates,which could help control the electrical properties to meet the requirements of various types of GaN-based *** progresses in the growth of undoped,Si-doped,Ge-doped,Fedoped,and highly pure GaN by hydride vapor phase epitaxy(HVPE) are reviewed in this *** growth technology and precursors of each type of doping are ***,the influence of doping on the optical and electrical properties of GaN are presented in ***,the problems caused by doping,as well as the methods to solve them are also *** last,highly pure GaN is briefly introduced,which points out a new way to realize high-purity semi-insulating(HPSI) GaN.

关键词： GaN hydride vapor phase epitaxy(HVPE) doping

Electrochemical liftoff of freestanding GaN by a thick highly conductive sacrificial layer grown by HVPE

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Chinese Physics B 2021年第6期30卷 531-535页

作者： Xiao Wang yu-min zhang yu Xu Zhi-Wei Si Ke Xu Jian-Feng Wang Bing Cao School of Optoelectronic Science and Engineering Soochow UniversitySuzhou 215006China Key Laboratory of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Laboratory of Modern Optical Technologies of Education ministry of China Soochow UniversitySuzhou 215006China Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO) Chinese Academy of Sciences(CAS)Suzhou 215123China Suzhou Nanowin Science and Technology Co. LtdSuzhou 215123China

Separation technology is an indispensable step in the preparation of freestanding GaN substrate. In this paper, a largearea freestanding GaN layer was separated from the substrate by an electrochemical liftoff process on a sandwich structure composed of an Fe-doped GaN substrate, a highly conductive Si-doped sacrificial layer and a top Fe-doped layer grown by hydride vapor phase epitaxy(HVPE). The large difference between the resistivity in the Si-doped layer and Fe-doped layer resulted in a sharp interface between the etched and unetched layer. It was found that the etching rate increased linearly with the applied voltage, while it continuously decreased with the electrochemical etching process as a result of the mass transport limitation. Flaky GaN pieces and nitrogen gas generated from the sacrificial layer by electrochemical etching were recognized as the main factors responsible for the blocking of the etching channel. Hence, a thick Si-doped layer grown by HVPE was used as the sacrificial layer to alleviate this problem. Moreover, high temperature and ultrasonic oscillation were also found to increase the etching rate. Based on the results above, we succeeded in the liftoff of ~ 1.5 inch GaN layer. This work could help reduce the cost of freestanding GaN substrate and identifies a new way for mass production.

关键词： electrochemical etching liftoff hydride vapor phase epitaxy(HVPE) freestanding GaN

Metagenomic insights into microorganisms and antibiotic resistance genes of waste antibiotic fermentation residues along production,storage and treatment processes

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Journal of Environmental Sciences 2024年第2期136卷 45-55页

作者： Ziming Han Xiao Luan Haodi Feng Yanqin Deng min Yang yu zhang State Key Laboratory of Environmental Aquatic Chemistry Research Center for Eco-Environmental SciencesChinese Academy of SciencesBeijing 100085China National Engineering Research Center of Industrial Wastewater Detoxication and Resource Recovery Beijing 100085China Wuhan Agricultural Inspection Center Wuhan 430016China University of Chinese Academy of Sciences Beijing 100049China

Antibiotic fermentation residue(AFR)is nutrient-rich solid waste generated from fermentative antibiotic production *** is demonstrated that AFR contains high-concentration of remaining antibiotics,and thus may promote antibiotic resistance development in receiving environment or feeding farmed ***,the dominate microorganisms and antibiotic resistance genes(ARGs)in AFRs have not been adequately explored,hampering understanding on the potential antibiotic resistance risk development caused by ***,seven kinds of representative AFRs along their production,storage,and treatment processes were collected,and multiple methods including amplicon sequencing,metagenomic sequencing,and bioinformatic approaches were adopted to explore the biological characteristics of *** expected,antibiotic fermentation producer was found as the predominant species in raw AFRs,which were collected at the outlet of fermentation ***,except for producer species,more environment-derived species persisted in stored AFRs,which were temporarily stored at a semi-open *** genus,classified as Firmicutes phylum and Bacilli class,became predominant bacterial taxa in stored AFRs,which might attribute to its tolerance to high concentration of *** from metagenomic sequencing together with assembly and binning approaches showed that these newly-colonizing species(e.g.,Lactobacillus genus)tended to carry ARGs conferring resistance to the remaining ***,after thermal treatment,remaining antibiotic could be efficiently removed from AFRs,and microorganisms together with DNA could be strongly *** sum,the main risk from the AFRs was the remaining antibiotic,while environment-derived bacteria which tolerate extreme environment,survived in ARFs with high content antibiotics,and may carry ***,hydrothermal or other harmless treatment technologies are recommended to remove antibiotic content and inactivate bacteria befor

关键词： Pharmaceutical manufacturing Antibiotic mycelia residue Antibiotic resistance bacteria Thermal treatment Solid waste

An advanced 2D/3D g-C_(3)N_(4)/TiO_(2)@MnO_(2) multifunctional membrane for sunlight-driven sustainable water purification

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Nano Research 2024年第4期17卷 2368-2380页

作者： Fan yu Chunjia Luo Xiaohan Niu min Chao Pengfei zhang Luke Yan Polymer Materials&Engineering Department School of Materials Science&EngineeringChang’an UniversityXi’an 710064China Key Laboratory of Road Construction Technology and Equipment MOEChang’an UniversityXi’an 710064China School of Textile Science and Engineering Xi’an Polytechnic UniversityXi’an 710064China

Graphitic carbon nitride(g-C_(3)N_(4))nanosheets have attracted widespread interest in the construction of advanced separation ***,dense stacking and a single functionality have limited the membrane ***,an advanced two-/three-dimensional(2D/3D)g-C_(3)N_(4)/TiO_(2)@MnO_(2) membrane is constructed by intercalating 3D TiO_(2)@MnO_(2) nanostructures into g-C_(3)N_(4) *** 3D flower-like nanostructures broaden the transport channels of the composite *** membrane can effectively separate five oil-in-water(O/W)emulsions,with a maximum flux of 3265.67±15.01 L·m^(-2)·h^(-1)·bar^(-1) and a maximum efficiency of 99.69%±0.45%for toluene-in-water emulsion(T/W).Meanwhile,the TiO_(2)@MnO_(2) acts as an excellent electron acceptor and provides positive spatial separation of electrons–holes(e^(-)–h^(+)).The formation of 2D/3D heterojunctions allows the material with wider light absorption and smaller bandgap(2.10 eV).These photoelectric properties give the membrane good degradation of three different pollutants,with about 100%degradation for methylene blue(MB)and malachite green(MG).The photocatalytic antibacterial efficiency of the membrane is also about 100%.After cyclic experiment,the membrane maintains its original separation and photocatalytic *** remarkable multifunctional and self-cleaning properties of the g-C_(3)N_(4) based membrane represent its potential value for complex wastewater treatment.

关键词： graphitic carbon nitride(g-C_(3)N_(4))based membrane three-dimensional(3D)nanostructures self-cleaning multifunction

Microdeletion on Xq27.1 in a Chinese VACTERL-Like Family with Kidney and Anal Anomalies

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Biomedical and Environmental Sciences 2024年第5期37卷 503-510页

作者： LI min zhang yu Lan zhang Kai Li LI Ping Ping Lyu yu Han LIANG Ya Xin yu yue Department of Gynecology and Obstetrics Beijing HospitalNational Center of GerontologyInstitute of Geriatric MedicineChinese Academy of Medical SciencesBeijing 100730China Chinese Academy of Medical Sciences and Peking Union Medical College Beijing HospitalBeijing 100730China The Key Laboratory of Geriatrics Beijing Institute of GeriatricsBeijing HospitalNational Center of GerontologyInstitute of Geriatric MedicineChinese Academy of Medical SciencesBeijing 100730China

Objective VATER/VACTERL-like association is associated with adverse pregnancy *** evidence of this disorder is *** this study,we aimed to provide genetic insights to improve the diagnosis of *** We have described a Chinese family in which four members were affected by renal defects or agenesis,anal atresia,and anovaginal fistula,which is consistent with the diagnosis of a VACTERL-like *** and genetic analyses were conducted using genome and exome *** Segregation analysis revealed the presence of a recessive X-linked microdeletion in two living affected individuals,harboring a 196–380 kb microdeletion on Xq27.1,which was identified by familial exome *** sequencing was performed on the affected male,confirming a-196 kb microdeletion in Xq27.1,which included a 28%loss of the CDR-1 *** family members were included in the co-segregation analysis,and only VACTERL-like cases with microdeletions were reported in *** These results suggest that the 196–380 kb microdeletion in Xq27.1 could be a possible cause of the VATER/VACTERL-like ***,further genetic and functional analyses are required to confirm or rule out genetic background as the definitive cause of the VACTERL association.

关键词： Prenatal diagnosis VACTERL whole-genome sequencing whole-exome sequencing X-linked

Fabrication and characterization of one-port surface acoustic wave resonators on semi-insulating GaN substrates

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Chinese Physics B 2019年第6期28卷 414-418页

作者： Xue Ji Wen-Xiu Dong yu-min zhang Jian-Feng Wang Ke Xu School of Nano Technology and Nano Bionics University of Science and Technology of ChinaHefei 230026China Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of SciencesSuzhou 215123China School of Information Science and Technology University of Science and Technology of ChinaHefei 230026China

One-port surface acoustic wave resonators(SAWRs) are fabricated on semi-insulating high-quality bulk GaN and GaN film substrates, respectively. The semi-insulating GaN substrates are grown by hydride vapor phase epitaxy(HVPE)and doped with Fe. The anisotropy of Rayleigh propagation and the electromechanical coupling coefficient in Fe-doped GaN are investigated. The difference in resonance frequency between the SAWs between [1120] GaN and [1100] GaN is about 0.25% for the Rayleigh propagation mode, which is smaller than that of non-intentionally doped GaN film(~1%)reported in the literature. The electromechanical coupling coefficient of Fe-doped GaN is about 3.03%, which is higher than that of non-intentionally doped GaN film. The one-port SAWR fabricated on an 8-μm Fe-doped GaN/sapphire substrate has a quality factor of 2050, and that fabricated on Fe-doped bulk GaN has a quality factor as high as 3650. All of our results indicate that high-quality bulk GaN is a very promising material for application in SAW devices.

关键词： surface acoustic wave one-port resonator gallium nitride(GaN) semi-insulating Fe-doped

Predictability of the 7·20 extreme rainstorm in Zhengzhou in stochastic kinetic-energy backscatter ensembles

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Science China Earth Sciences 2024年第7期67卷 2226-2241页

作者： min YANG Peilong yu Lifeng zhang Xiaobing PAN Quanjia ZHONG yunying LI College of Meteorology and Oceanography National University of Defense TechnologyChangsha 410073China Key Laboratory of High Impact Weather(Special) China Meteorological AdministrationChangsha 410073China Collaborative Innovation Center on Forecast and Evaluation of Meteorological Disasters/Key Laboratory of Meteorological Disaster Ministry of Education/Joint International Research Laboratory of Climate and Environment ChangeNanjing University of Information Science and TechnologyNanjing 210044China Department of Ocean Science Hong Kong University of Science and TechnologyHong Kong 999077China

The scale-dependent predictability of the devastating 7·20 extreme rainstorm in Zhengzhou,China in 2021 was investigated via ensemble experiments,which were perturbed on different scales using the stochastic kinetic-energy backscatter(SKEB)scheme in the WRF model,with the innermost domain having a 3-km grid *** daily rainfall(RAIN24h)and the cloudburst during 1600-1700 LST(RAIN1h)were *** demonstrated that with larger perturbation scales,the ensemble spread for the rainfall maximum widens and rainfall forecasts become closer to the *** ensembles with mesoscale or convective-scale perturbations,RAIN1h loses predictability at scales smaller than 20 km and RAIN24h is predictable for all *** in ensembles with synoptic-scale perturbations,the largest scale of predictability loss extends to 60 km for both RAIN1h and ***,the average positional error in forecasting the heaviest rainfall for RAIN24h(RAIN1h)was 400 km(50-60)*** southerly low-level jet near Zhengzhou was assumed to be directly responsible for the forecast uncertainty of *** rapid intensification in low-level cyclonic vorticity,mid-level divergence,and upward motion concomitant with the jet dynamically facilitated the *** analysis of the divergent,rotational and vertical kinetic spectra and the corresponding error spectra showed that the error kinetic energy at smaller scales grows faster than that at larger scales and saturates more quickly in all ***-scale perturbations not only boost larger-scale error growth but are also conducive to error growth at all scales through a downscale cascade,which indicates that improving the accuracy of larger-scale flow forecast may discernibly contributes to the forecast of cloudburst intensity and position.

关键词： Stochastic kinetic-energy backscatter(SKEB) Extreme rainfall Ensemble forecast Predictability

Decoration of Electrospun Nanofibers with Magnetic Nanoparticles via Electrospinning and Sol-gel Process

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Chemical Research in Chinese Universities 2010年第5期26卷 847-850页

作者： YANG Fan ZHENG Wei HUANG Hui-min LI Zhen-yu zhang Hong-nan WANG Wei WANG Ce Alan G. MacDiarmid Institute Jilin University Changchun 130012 P. R. China

Polyacrylonitrile（PAN）/Fe3O4 composite nanofibers were successfully obtained through electrospinning and sol-gel technology. The resulting magnetic Fe3O4 nanoparticles were homogeneously distributed on the surface of PAN nanofibers and the diameters of polyacrylonitrile nanofibers and nanoparticles were easily controlled, respectively. The distribution of Fe3O4 nanoparticles inside the nanofibrous composite was investigated by field emission scanning electron microscopy and transmission electron microscopy. X-ray diffraction reveals the presence of Fe3O4 nanoparticles in the composite nanofiber. The resulting sample shows a super paramagnetic behavior.

关键词： Electrospinning Magnetic Fe3O4 Nanoparticle Sol-gel