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Recyclable Polypropylene-based Insulation Materials for HVDC Cables:Progress and Perspective

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CSEE Journal of Power and Energy Systems 2024年第5期10卷 2208-2220页

作者： Yao Zhou Shixun hu Chao Yuan jun hu Qi Li {3. he State Key Laboratory of Power Systems Department of Electrical EngineeringTsinghua UniversityBeijing 100084China beijing Key Lab of High Voltage&EMC and State Key Lab of Alternate Electrical Power System with Renewable Energy SourcesNorth China Electric Power UniversityBeijing 102206China.

Polypropylene(PP)-based recyclable materials have attracted tremendous interest for HVDC cable insulation applications due to their superior electrical properties,e.g.,high thermal stability and superior *** with crosslinked polyethylene(XLPE),PP-based materials exhibit the advantages of not only higher working temperatures but also facile and efficient cable manufacturing with reduced costs,which are highly desirable in HVDC cable *** their promising advantages,PP-based materials have received significant attention from both academia and industry in the field of HVDC cable *** order to adopt PP as a cable insulation material,the mechanical flexibility of PP should be ***,regulations of the mechanical properties inevitably influences the electrical properties of *** extensive research has been conducted on the regulation of the mechanical and electrical properties of *** review summarizes the research progress on recyclable PP-based materials for HVDC cable insulation *** attention is placed on the electrical property regulations and material structure-property *** challenges that remain to be addressed and the opportunities for future studies on PP-based recyclable HVDC cable insulation materials are also presented.

关键词： polypropylene HVDC cable dielectric materials recyclable insulation materials

Enhanced electrical Properties of Styrene-grafted Polypropylene Insulation for Bulk Power Transmission HVDC Cables

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CSEE Journal of Power and Energy Systems 2024年第1期10卷 361-370页

作者： Hao Yuan Shixun hu Yao Zhou Chao Yuan Wenbo Song Qing Shao Hongwei Shi Juan Li jun hu Qi Li {3. he SINOPEC beijing Research Institute of Chemical Industry Beijing 100013China State Key Laboratory of Power Systems Department of Electrical EngineeringTsinghua UniversityBeijing 100084China

Polypropylene(PP)is considered to be a rather promising material for HVDC cable *** modification has proved to be an effective method on the electrical property improvements of *** paper reports on the highlyenhanced electrical properties of styrene-grafted polypropylene(PP-g-St)and their related *** influence of grafting styrene on crystallization structures,thermal properties and electrical properties of PP-g-St are characterized and *** results show that PP-g-St exhibits remarkably enhanced DC volume resistivity,suppressed space charge accumulation and improved DC breakdown strengths as compared to *** observation shows PP-g-St has small,imperfect spherulites with indistinct boundaries,which is strongly correlated to enhanced electrical *** study provides an effective grafting strategy to design high-performance HVDC cable insulation materials for bulk power transmission systems.

关键词： electrical properties grafting modification polypropylene styrene

Microstructures and characteristics of deep trap levels in ZnO varistors doped with Y_2O_3

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Science china(Technological Sciences) 2009年第12期52卷 3668-3673页

作者： liu jun 1 ,hu jun 1 ,he jinliang 1 ,LIN Yuan{3.a 2 &LONG WangCheng 1 1State Key Laboratory of Power Systems,{3.,tsinghua university,beijing 100084,china 2State Key Laboratory of New Ceramics and Fine Processing,department of Material Science and engineering,tsinghua university, beijing 100084,china 1. State Key Laboratory of Power Systems Department of Electrical Engineering Tsinghua University Beijing 100084 China 2. State Key Laboratory of New Ceramics and Fine Processing Department of Material Science and Engineering Tsinghua University Beijing 100084 China

In this paper discussions on ZnO based varistor ceramics doped with different ratios of Y2O3.are *** on the phase and microstructures of the samples indicates that an additional phase is detected in the samples doped with Y2O3.and the average grain size of the specimens decreases from about 9.2μm to 4.5μm,with an increase in the addition of Y2O3.from 0 mol%to 3.mol%.The corresponding varistor’s voltage gradient markedly increases from 462 V/mm to 23.0 V/mm,while the nonlinear coefficient decreases from 22.3.to 11.5,***,the characteristics of deep trap levels in these ZnO samples are investigated by measuring their dielectric *** trap energy level and capture cross section evaluated by relaxation peak of the Cole-Cole plot vary slightly as the addition of Y2O3.*** traps may be ascribed to the intrinsic defects of ZnO lattice.

关键词： ZnO varistors Y2O3 electrical properties deep trap levels

makeTwin:A reference architecture for digital twin software platform

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Chinese Journal of Aeronautics 2024年第1期37卷 1-18页

作者： Fei TAO Xuemin SUN Jiangfeng CheNG Yonghuai Zhu Weiran {3. Yong WANG hui XU Tianliang hu Xiaojun {3. Tingyu {3. Zheng SUN jun XU Jinsong BAO Feng XIANG Xiaohui JIN Digital Twin International Research Center International Research Institute for Multidisciplinary ScienceBeihang UniversityBeijing 100191China School of Automation Science and electrical engineering Beihang UniversityBeijing 100191China Institute of Advanced Manufacturing and Intelligent Technology Beijing University of TechnologyBeijing 100124China RIAMB(beijing)Technology Development Co Ltd(R.T.D.)Beijing 100120China School of Mechanical engineering Shandong UniversityJinan 250061China School of Mechanical engineering Southeast UniversityNanjing 211189China School of Mechanical engineering Xi’an Jiaotong UniversityXi’an 710049China College of Mechanical engineering Donghua UniversityShanghai 201620China School of Machinery and Automation Wuhan University of Science and TechnologyWuhan 430081China beijing Aero-top Hi-tech Co LtdBeijing 100176China

Digital twin is currently undergoing a significant transformation from the conceptual and theoretical research phase to the implementation and application ***,a universally adaptable research and development platform for digital twin is critically needed to meet the development ***,a publicly accessible simulation,testing,and validation platform which can support digital twin model building,data processing,algorithm design,configuration,etc.,is urgently required for ***,for developers from the industry,a lowcode development platform that can offer a customizable suite of functions such as model creation,data management,protocol configuration,and visualization is urgently ***,for enterprise users,there is a lack of an application management platform that can be configured and migrated for various application scenarios,functions,and ***,based on the system research of digital twin theories and key technologies by the authors(such as the five-dimension digital twin model,digital twin modeling and digital twin data theory,digital twin standards,and so on),a digital twin software platform reference architecture,namely make Twin,is proposed and designed,as well as its ten core *** workflow of the make Twin and the interaction mechanisms among its core functions are ***,a digital twin application system for a chemical fiber textile shop floor(CFTS)which was developed according to make Twin,is introduced,which validates the proposed reference architecture.

关键词： Digital twin Digital twin software platform Industrial software makeTwin Reference architecture

Design and research of RF system for 10 MeV compact cyclotron

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Science china(Physics,Mechanics & Astronomy) 2011年第S2期54卷 225-230页

作者： Dong Li (1) TongNing hu (2) KaiFeng liu (1) jun Yang (1) 1. College of electrical and Electronic engineering Huazhong University of Science and Technology Wuhan 430074 China2. Department of Electronics and Information Engineering Huazhong University of Science and Technology Wuhan 430074 China

A 10 MeV compact cyclotron (CYChu-10) has been developing in huazhong university of Science and Technology (huST). The RF system includes a 10 kW RF power generator and a resonance cavity. There is no automatic frequency tuning equipment in the cavity due to space limitations, so the generator must search and track the cavity resonant frequency. AD9850 synthesizer is used to generate RF signal in the experimental prototype, and a fine sinusoidal waveform around 99 MHz is obtained with the method of picking up a special aliased signal from the synthesizer's output, and the output power level can be set by regulating the resistor connected to the Pin 'Rset'. The final stage amplifier based on tetrode operates in the grounded cathode configuration, and the schematic of the tetrode circuit is illustrated. The method of searching the resonant frequency is discussed in detail. For the sake of a compact and robust structure, the resonance cavity will adopt non-uniform characteristic impedance coaxial structure, and the magnet surface electroplated with copper will be used as dummy Dees. The precise shapes and dimensions of the cavity are designed and simulation results are carried out in this paper. The distributions of electromagnetic field are illustrated by means of numerical calculation analysis, and the wooden model test is preformed as well.

关键词： compact cyclotron RF system AD9850 tetrode resonance cavity

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电力系统中的雷电暂态感知、监测和应用

高电压技术 2024年第8期50卷 3303-3323页

作者：杨庆柯锟胡军姚子恒吴世林何金良输变电装备技术全国重点实验室(重庆大学电气工程学院) 重庆400044 清华大学电机工程与应用电子技术系北京100084

雷电是造成电力系统故障的首要原因,实现对雷电暂态电压电流信号的感知、监测和数据应用对于维护系统安全稳定运行具有重要意义。面向日益复杂的新型电力系统结构形态,传感器件在满足雷电宽频测量的基础上,监测装置正朝着微型化、高精... 详细信息

雷电是造成电力系统故障的首要原因,实现对雷电暂态电压电流信号的感知、监测和数据应用对于维护系统安全稳定运行具有重要意义。面向日益复杂的新型电力系统结构形态,传感器件在满足雷电宽频测量的基础上,监测装置正朝着微型化、高精度、强互联和易取能方向发展。因此,该文基于雷电暂态感知方法、监测装置关键技术和雷击数据统计应用的研究现状,首先介绍了基于不同原理的电压/电场和电流/磁场传感技术,并分析了各自的优缺点;其次梳理了传感器微型化、时间同步、通信和供能等关键技术的最新进展;随后通过对雷击暂态波形的统计分析,探讨了监测数据在雷击故障识别与定位中的应用;最后对电力系统中雷电暂态感知、监测与应用进行总结并对其发展趋势作出展望。

关键词：电压/电场传感技术电流/磁场传感技术微型化技术时间同步供能与通信统计分析雷击故障识别与定位

The dependence of sintering temperature on Schottky barrier and bulk electron traps of ZnO varistors

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Science china(Technological Sciences) 2011年第2期54卷 375-378页

作者： liu jun he {3. hu jun LONG WangCheng State Key Laboratory of Power Systems Department of Electrical Engineering Tsinghua University Beijing 100084 China

In order to investigate the influence of sintering temperature on the Schottky barrier and bulk electron traps of ZnO varis- tors, ZnO-Bi2O3.based varistor ceramic samples were sintered at 1000, 1100, 1200 and 13.0℃, respectively. The measured results indicate that the sample sintered at 13.0℃ possesses the lowest voltage gradient and nonlinear coefficient, compared with other samples. The barrier height of the samples decreased as the sintering temperature increased, which resulted in the deterioration of nonlinearity. Furthermore, two bulk electron traps determined by admittance spectroscopy were generally independent of sintering temperature, which indicated that these two traps might originate from the intrinsic defects in ZnO lattice.

关键词： ZnO varistor sintering temperature Schottky barrier bulk electron trap admittance spectroscopy

Two-dimensional materials for future information technology: status and prospects

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Science china(Information Sciences) 2024年第6期67卷 1-147页

作者： Hao QIU Zhihao YU Tiange ZHAO Qi ZHANG Mingsheng XU Peifeng LI Taotao LI Wenzhong BAO Yang CHAI Shula CheN Yiqi CheN hui-Ming CheNG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO jun he Xiao he Jingyi hu Weida hu Zehua hu Xinyue huANG Ziyang huANG Ali IMRAN Ziqiang KONG Jia LI Qian LI Weisheng LI Lei LIAO Bilu liu Can liu Chunsen liu Guanyu liu Kaihui liu Liwei liu Sheng liu Yuan liu Donglin LU Likuan MA Feng MIAO Zhenhua NI Jing NING Anlian PAN Tian-Ling REN Haowen Shu Litao SUN Yue SUN Quanyang TAO Zi-Ao TIAN Dong WANG Hao WANG Haomin WANG Jialong WANG junyong WANG Wenhui WANG Xingjun WANG Yeliang WANG Yuwei WANG Zhenyu WANG Yao WE... School of Electronic Science and engineering Nanjing University School of Integrated Circuits Interdisciplinary Research Center for Future Intelligent Chips (Chip-X)Nanjing University School of Integrated Circuit Science and engineering Nanjing University of Posts and Telecommunications State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences School of Physics and Key Lab of Quantum Materials and Devices of the Ministry of Education School of Electronic Science & EngineeringSoutheast University College of Integrated Circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University Suzhou Laboratory State Key Laboratory of Integrated Chips and Systems School of MicroelectronicsFudan University Shaoxin Laboratory department of Applied Physics The Hong Kong Polytechnic University Key Laboratory for Micro-Nano Physics and Technology of hunan Province College of Materials Science and EngineeringHunan University College of Integrated Circuits Zhejiang University Shenzhen Geim Graphene Center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University State Key Laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical engineering Hunan University Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China School

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3. integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

关键词： two-dimensional (2D) materials information technology production technology standardization of characterization microelectronic devices optoelectronic devices multi-functional integration

ZnO varistors with high voltage gradient and low leakage current by doping rare-earth oxide

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Science china(Technological Sciences) 2008年第6期51卷 693-701页

作者： he jinliang hu {3. LIN Yuanhua Sate Key Lab of Power Systems Department of Electrical EngineeringTsinghua UniversityBeijing 100084China State Key Lab of New Ceramics and Fine Processing Department of Material Science and EngineeringTsinghua UniversityBeijing 100084China

The surge arrester of 1000 kV gas-insulated substation (GIS) needs ZnO varistor with high voltage gradient to effectively improve the potential distribution along ZnO varistor column inside the metal-oxide surge arresters. In this paper, the elec-trical and structural parameters of ZnO varistors are changed by doping with some rare-earth oxides, and the mechanism which leads these changes is discussed. When rare-earth oxide additives are added into ZnO varistors, the growing speed is slowed down due to the stabilization of the new spinel phases formed in the grain-boundary by rare-earth oxide additives, then the size of ZnO grains is smaller, and the voltage gradient of varistor increases obviously. By adding suitable amount of oxides of metal Co and Mn, the leakage current can be effectively decreased and the nonlinearity coefficient increased. The novel ZnO varistor samples sintered with the optimal additives have a voltage gradient of 492 V/mm, and the nonlinearity coefficient of 76, but their leakage currents are only 1 μA.

关键词： ZnO varistors rare-earth oxide U-I characteristics voltage gradient leakage current nonlinear coefficient spinel